Patents by Inventor Mizue Ishikawa

Mizue Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SPIN TRANSISTOR AND MAGNETIC MEMORY
    Publication number: 20090059659
    Abstract: A spin transistor includes a first ferromagnetic layer provided on a substrate and having an invariable magnetization direction, a second ferromagnetic layer provided on the substrate apart from the first ferromagnetic layer in a first direction, and having a variable magnetization direction, a plurality of projecting semiconductor layers provided on the substrate to extend in the first direction, and sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a plurality of channel regions respectively provided in the projecting semiconductor layers, and a gate electrode provided on the channel regions.
    Type: Application
    Filed: August 28, 2008
    Publication date: March 5, 2009
    Inventors: Tomoaki INOKUCHI, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito
  • SPIN MOS FIELD EFFECT TRANSISTOR AND TUNNELING MAGNETORESISTIVE EFFECT ELEMENT USING STACK HAVING HEUSLER ALLOY
    Publication number: 20090050948
    Abstract: A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
    Type: Application
    Filed: August 20, 2008
    Publication date: February 26, 2009
    Inventors: Mizue ISHIKAWA, Yoshiaki Saito, Hideyuki Sugiyama, Tomoaki Inokuchi