Patents by Inventor Mo Chen
Mo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130143340Abstract: A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130143341Abstract: A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140595Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140519Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140596Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140520Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130114900Abstract: Methods, apparatuses, and computer program products are herein provided for providing a REVV system that is configured to provide an MVS that is operable on a mobile terminal. One example method may include causing a plurality of vector word residuals to be aggregated for at least one visual word using local feature descriptors extracted from an image. The method may further include causing the dimensionality of the aggregated at least one vector word residual for each visual word to be reduced by using a classification aware linear discriminant analysis. The method may further include computing, using a processor, a weighted correlation for at least one compact image signature that is binarized from the aggregated at least one vector word residual when compared to a list of candidates. The method may further include determining a ranked list of candidates based on the computed weighted correlation.Type: ApplicationFiled: November 7, 2011Publication date: May 9, 2013Applicants: Stanford University, Nokia CorporationInventors: Ramakrishna Vedantham, Radek Grzeszczuk, David Mo Chen, Shang-Hsuan Tsai, Bernd Griod
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Publication number: 20130107367Abstract: The invention relates to a grating. The grating includes a substrate and a plurality of protrusions located on a surface of the substrate. The protrusions are parallel to and spaced from each other. A cavity is formed between each two adjacent protrusions. An aspect ratio of the grating is equal to or greater than about 6:1. A width of each cavity is in the range of about 25 nm to about 150 nm. The grating provided by present invention has good diffractive effects.Type: ApplicationFiled: October 23, 2012Publication date: May 2, 2013Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
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Publication number: 20130105438Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2). Finally, the patterned mask layer is removed.Type: ApplicationFiled: October 23, 2012Publication date: May 2, 2013Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
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Publication number: 20130105439Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a patterned mask layer is formed on a surface of the substrate. Third, the substrate with the patterned mask layer is placed in a microwave plasma system. Fourth, a plurality of etching gases are guided into the microwave plasma system simultaneously to etch the substrate through three stages. The etching gas includes carbon tetrafluoride (CF4), argon (Ar2), and sulfur hexafluoride (SF6). Finally, the patterned mask layer is removed.Type: ApplicationFiled: October 23, 2012Publication date: May 2, 2013Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130089709Abstract: A three-dimensional nano-structure array includes a substrate and a number of three-dimensional nano-structures. Each three-dimensional nano-structure has a first peak and a second peak aligned side by side. A first groove is defined between the first peak and the second peak. A second groove is defined between the two adjacent three-dimensional nano-structures. A depth of the first groove is lower than that of the second groove.Type: ApplicationFiled: December 29, 2011Publication date: April 11, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, YUAN-HAO JIN, SHOU-SHAN FAN
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Publication number: 20130087526Abstract: A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.Type: ApplicationFiled: December 29, 2011Publication date: April 11, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, YUAN-HAO JIN, SHOU-SHAN FAN
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Publication number: 20130087528Abstract: A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.Type: ApplicationFiled: November 28, 2012Publication date: April 11, 2013Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
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Publication number: 20130022989Abstract: Provided is dental stem cell comprising an Oct3/4 transgene. Also provided is a method of making a pluripotent stem cell. Additionally, a method of preparing an insulin-secreting cell is provided. Further provided is an insulin-secreting cell prepared by that method. A method of preparing a chondrocyte-like cell is also provided, as is a chondrocyte-like cell prepared by that method. Additionally provided is a method of preparing a myocyte-like cell. Also, a myocyte-like cell prepared by that method is provided. A method of preparing a hair follicle-like cell is additionally provided, as is a hair follicle-like cell prepared by that method. A method of preparing a neuron-like cell is additionally provided, as is a neuron-like cell prepared by that method.Type: ApplicationFiled: June 25, 2010Publication date: January 24, 2013Applicant: The Trustees of Columbia University in the City of New YorkInventors: Jeremy J. Mao, Mo Chen
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Patent number: 8344065Abstract: A nanoimprint resist includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), and a diluent solvent. A method of a nanoimprint lithography is also provided.Type: GrantFiled: March 5, 2010Date of Patent: January 1, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
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Patent number: 8321055Abstract: A machine vision system for controlling the alignment of an arm in a robotic handling system. The machine vision system includes an optical imager aligned to simultaneously capture an image that contains a view of the side of an object, such as a test tube, along with a view of the top of the object provided by a mirror appropriately positioned on the robotic arm. The machine vision system further includes a microcontroller or similar device for interpreting both portions of the image. For example, the microcontroller may be programmed to determine the location of the object in the reflected portion of the image and transpose that information into the location of the object relative to the robotic arm. The microcontroller may also be programmed to decode information positioned on the object by interpreting visual information contained in the other portion of the captured image.Type: GrantFiled: November 3, 2009Date of Patent: November 27, 2012Assignee: JADAK, LLCInventors: Mo Chen, Robert Mumford Gowans
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Patent number: 8319823Abstract: A system for capturing images of a target, such as a test tube, that is presented in front of an optical imager and rotated 360 degrees. The imager of the system captures a series of images which are then stitched together to form a panoramic image of the target. The panoramic image may then be processed to decode any barcode code information placed on the target, capture other information placed on the target, or obtain information about the target or the contents thereof.Type: GrantFiled: November 3, 2009Date of Patent: November 27, 2012Assignee: JADAK, LLCInventors: Mo Chen, Daniel Francis Godici
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Patent number: 8282381Abstract: A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator.Type: GrantFiled: April 30, 2012Date of Patent: October 9, 2012Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
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Publication number: 20120244245Abstract: A nanoimprint mold includes a flexible body and a molding layer formed on the flexible body. The molding layer includes a plurality of protrusions and recesses. The molding layer is a polymer material polymerized via a cross linking polymerization of a nanoimprint resist which includes a hyperbranched polyurethane oligomer (HP), a perfluoropolyether (PFPE), a methylmethacrylate (MMA), a diluent solvent and a photo initiator.Type: ApplicationFiled: April 30, 2012Publication date: September 27, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
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Publication number: 20120232182Abstract: A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.Type: ApplicationFiled: May 24, 2012Publication date: September 13, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN