Patents by Inventor Mo Chen
Mo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8785955Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: May 22, 2012Date of Patent: July 22, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Patent number: 8785221Abstract: A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.Type: GrantFiled: May 23, 2012Date of Patent: July 22, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Patent number: 8778709Abstract: A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer.Type: GrantFiled: May 23, 2012Date of Patent: July 15, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Publication number: 20140175045Abstract: A method for making grating is provided. The method includes following steps. A substrate is provided. A mask layer is located on the substrate. The mask layer is patterned, and a number of bar-shaped protruding structures are formed on a surface of the mask layer, a slot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the substrate. The protruding structures are etched so that each of two adjacent protruding structures begin to slant face to face until they are contacting each other. The exposed portion of the substrate is etched through the slot. The mask layer is removed.Type: ApplicationFiled: April 8, 2013Publication date: June 26, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Patent number: 8759858Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: May 23, 2012Date of Patent: June 24, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Patent number: 8759857Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: May 23, 2012Date of Patent: June 24, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Publication number: 20140091276Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped.Type: ApplicationFiled: December 4, 2013Publication date: April 3, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20140093481Abstract: One aspect provides a method of forming a mineralized material by co-culturing a epithelial cell, such as ameloblasts, and mesenchymal cells, such as osteoblasts or odontoblasts, in a mineral-stimulating medium. Another aspect provides matrix seeded with epithelial cells and mesenchymal cells and infused with a mineral-stimulating medium capable of forming a mineralized material in the matrix. Methods of manufacturing such compositions and methods of treating mineralization-related conditions are also provided.Type: ApplicationFiled: October 3, 2011Publication date: April 3, 2014Applicant: The Trustees of Columbia University in the City of New YorkInventors: Jeremy J. Mao, Mo Chen
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Publication number: 20140084243Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: December 2, 2013Publication date: March 27, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., Tsinghua UniversityInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20140036092Abstract: An automatic process for calibrating the optical image exposure value to compensate for changes in machine vision systems to maintain optimal exposure of captured images and adjust for the different characteristics among cameras components, such as imaging sensor sensitivity, LED strength, external lighting, reflective functions of any background material, different external lighting conditions, possible changes or updates of the systems over the years, such as LED changes, and even the aging of camera sensor and LEDs over time. A series of images of a target are captured with a predetermined sequence of exposure values, the saturation exposure percentage of a region of interest is calculated in each of the images, and the saturation exposure percentages are compared to determine the exposure value that has a saturation exposure percentage that varies the least from the saturation exposure value of the preceding and following exposure values.Type: ApplicationFiled: July 31, 2012Publication date: February 6, 2014Applicant: JADAK, LLCInventors: Mo Chen, Chun Jia
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Patent number: 8629424Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.Type: GrantFiled: May 23, 2012Date of Patent: January 14, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Patent number: 8624285Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: May 23, 2012Date of Patent: January 7, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
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Patent number: 8574178Abstract: A rehabilitation system for training hand movement of a user, the system comprising: a platform to be attached to the hand of the user; a plurality of finger assemblies operatively connected to the platform, each finger assembly having: a motor, a proximal follower assembly for a metacarpophalangeal (MCP) joint having a proximal rail guide operatively connected to the motor, and an intermediate follower assembly for a proximal interphalangeal (PIP) joint having an intermediate rail guide operatively connected to the proximal follower assembly; wherein a knuckle joint indicator of the proximal rail guide corresponds to a first virtual center and knuckle joint indicator of the intermediate rail guide corresponds to a second virtual center, the alignment of the knuckle joint indicators to the virtual centers enable motion of the finger to be controlled and maintain rotational axes of the finger about each virtual center when the proximal and intermediate follower assemblies are actuated by the motor.Type: GrantFiled: May 26, 2009Date of Patent: November 5, 2013Assignee: The Hong Kong Polytechnic UniversityInventors: Kai Yu Tong, Peter Man Kit Pang, Mo Chen, Sze Kit Ho, Hongfu Zhou, David Tai Wai Chan
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Patent number: 8574822Abstract: A nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether, a methylmethacrylate, a diluent solvent, and a photo initiator. The hyperbranched polyurethane oligomer can be polymerized by a copolymerization of trimellitic anhydride, ethylene mercaptan, and epoxy acrylic acid. The hyperbranched polyurethane oligomer can also be polymerized by a ring-opening copolymerization epoxy acrylic acid and ethylene glycol.Type: GrantFiled: May 24, 2012Date of Patent: November 5, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
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Publication number: 20130203835Abstract: Provided herein are methods to reduce or slow down cell growth, for example in a cancer cell comprising contacting a cell with an effective amount of a combination of inhibitory RNA molecules targeting hnRNPA1, hnRNPA2 and PTB. Provided are methods to identify agents which reduce the levels of hnRNPA1, hnRNPA2 or PTB. Provided are methods to identify agents which increase ratio of PKM1/PKM2 proteins, or reduce PKM2 levels, or increase PKM1 levels.Type: ApplicationFiled: March 7, 2011Publication date: August 8, 2013Inventors: James L. Manley, Mo Chen, Charles David, Jian Zhang
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Patent number: 8502971Abstract: A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system.Type: GrantFiled: April 21, 2011Date of Patent: August 6, 2013Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
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Publication number: 20130172414Abstract: A pharmaceutical composition comprising levocarnitine and dobesilate is provided. Also provided are a method for regulating the level of serum creatinine and/or blood urea nitrogen and a method for treating and/or preventing the diseases influencing renal function, for example, including but not limiting to various primary, secondary nephritis, renal lesions, renal insufficiency, nephritic syndrome, even renal failure, uremia, as well as the complications induced by the diseases and/or disorders influencing renal function for example, such as cardiovascular diseases, diabetes and the like.Type: ApplicationFiled: June 10, 2011Publication date: July 4, 2013Applicants: TIANJIN NANKAI SHARE PHARMACEUTICAL SCIENCE & TECHNOLOGY CO., LTD., XIZANG LINZHI PARKSON PHARMACEUTICAL CO., LTD., NANKAI SHARE PHARMACEUTICAL CO., LTD., LIAONING SEBEST PHARMACEUTICL CO., LTD.Inventors: Yong Wang, Xin Zhao, Mo Chen, Ning Tian
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Publication number: 20130140593Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 22, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140594Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130143342Abstract: A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN