Patents by Inventor Mo Chen
Mo Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20150293995Abstract: Systems and methods are described that can provide users with personalized video content feeds. In several embodiments, a multi-modal segmentation process is utilized that relies upon cues derived from video, audio and/or text data present in a video data stream. In a number of embodiments, video streams from a variety of sources are segmented. Links are identified between video segments and between video segments and online articles containing additional information relevant to the video segments. The additional information obtained by linking a video segment to an additional source of data can be utilized in the generation of personalized playlists. In the context of news programming, the dynamic mixing and aggregation of news videos from multiple sources can greatly enrich the news watching experience. In several embodiments, processes for linking video segments to additional sources of data can be implemented as part of a video search engine service.Type: ApplicationFiled: July 7, 2014Publication date: October 15, 2015Inventors: David Mo Chen, Huizhong Chen, Maryam Daneshi, Andre Filgueiras de Araujo, Bernd Girod, Shanghsuan Tsai, Peter Vajda, Matthew Chuck-Jun Yu
-
Patent number: 9130100Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: January 23, 2015Date of Patent: September 8, 2015Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Patent number: 9120265Abstract: A nanoimprint lithography method includes the following steps. First, a first sacrifice layer, a second sacrifice layer and a nanoimprint resist are formed on a substrate. The nanoimprint resist includes a hyperbranched polyurethane oligomer, a perfluoropolyether; a methylmethacrylate, and a diluent solvent. Second, a master stamp with a first nanopattern formed by a number of projecting portions and gaps is provided, and the first nanopattern is pressed into the nanoimprint resist to form a second nanopattern in the nanoimprint resist. Third, the second nanopattern is transferred to the substrate.Type: GrantFiled: November 28, 2012Date of Patent: September 1, 2015Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
-
Publication number: 20150129837Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located both on the first surface and second surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: January 23, 2015Publication date: May 14, 2015Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
-
Publication number: 20150113345Abstract: Scan flip-flop and associated method are provided. The scan flip-flop includes a data input terminal, a scan input terminal, a flip-flop circuit, a first transistor and a plurality of second transistors. A gate of the first transistor is coupled to the scan input terminal, gates of the second transistors are commonly coupled to an enabling signal, drains and sources of the first transistor and the second transistors are serially coupled to the flip-flop circuit, so as to increase a delay between the scan input terminal and the flip-flop circuit.Type: ApplicationFiled: October 21, 2014Publication date: April 23, 2015Inventors: Sho-Mo Chen, Chien-Cheng Wu
-
Publication number: 20150087141Abstract: A method for making a metal grating is provided. The method includes providing a substrate, applying a metal layer on a surface of the substrate, forming a number of protrusions spaced from each other on a surface of the metal layer, wherein each of the number of protrusions is made of two resist layer, one of the two resist layers being made of silicone oligomer, etching the surface of the metal layer exposed out of the number of protrusions using a physical etching gas and a reactive etching gas, and dissolving the number of protrusions on the surface of the metal layer.Type: ApplicationFiled: April 28, 2014Publication date: March 26, 2015Applicants: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
-
Patent number: 8981342Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and a surface of the active layer, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: December 2, 2013Date of Patent: March 17, 2015Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Publication number: 20150069326Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped.Type: ApplicationFiled: November 16, 2014Publication date: March 12, 2015Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
-
Patent number: 8976257Abstract: An automatic process for calibrating the optical image exposure value to compensate for changes in machine vision systems to maintain optimal exposure of captured images and adjust for the different characteristics among cameras components, such as imaging sensor sensitivity, LED strength, external lighting, reflective functions of any background material, different external lighting conditions, possible changes or updates of the systems over the years, such as LED changes, and even the aging of camera sensor and LEDs over time. A series of images of a target are captured with a predetermined sequence of exposure values, the saturation exposure percentage of a region of interest is calculated in each of the images, and the saturation exposure percentages are compared to determine the exposure value that has a saturation exposure percentage that varies the least from the saturation exposure value of the preceding and following exposure values.Type: GrantFiled: July 31, 2012Date of Patent: March 10, 2015Assignee: Jadak, LLCInventors: Mo Chen, Chun Jia
-
Patent number: 8946753Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on the substrate, and a cross section of each of the three-dimensional nano-structures is M-shaped.Type: GrantFiled: December 4, 2013Date of Patent: February 3, 2015Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Publication number: 20140367357Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride, sulfur hexafluoride, and argon. Finally, the patterned mask layer is removed.Type: ApplicationFiled: August 27, 2014Publication date: December 18, 2014Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN
-
Publication number: 20140356791Abstract: A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed.Type: ApplicationFiled: April 2, 2014Publication date: December 4, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: JUN-KU LIU, MENG-XIN REN, LI-HUI ZHANG, MO CHEN, QUN-QING LI, SHOU-SHAN FAN
-
Publication number: 20140346137Abstract: A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent bar-shaped protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent bar-shaped protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Inventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, YUAN-HAO JIN, SHOU-SHAN FAN
-
Publication number: 20140321664Abstract: Methods for dynamically programming a microphone are provided. The method, adopted by a microphone system including a first microphone device and a host device connected thereto, includes: transmitting, by the host device, a command message to the first microphone device; receiving, by the first microphone device, a command message from the host device; decoding, by the first microphone device, the command message; dynamically performing, by the first microphone device, an operation based on the decoded command message to generate first data; and receiving, by the host device, first data from the first microphone device.Type: ApplicationFiled: April 25, 2013Publication date: October 30, 2014Applicant: Fortemedia, Inc.Inventors: Yen-Son Paul HUANG, Sho-Mo CHEN, Iou-Din Jean CHEN
-
Patent number: 8865007Abstract: A method for making three-dimensional nano-structure array is provided. The method includes following steps. A base is provided. A mask layer is located on the base. The mask layer is patterned, and a number of bar-shaped protruding structures is formed on a surface of the mask layer, a lot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the base. The exposed portion of the base is etched through the slot so that the each of two adjacent protruding structures begin to slant face to face until they are contacting each other to form a protruding pair. The mask layer is removed.Type: GrantFiled: December 29, 2011Date of Patent: October 21, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Yuan-Hao Jin, Shou-Shan Fan
-
Patent number: 8853096Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2). Finally, the patterned mask layer is removed.Type: GrantFiled: October 23, 2012Date of Patent: October 7, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen
-
Patent number: 8821743Abstract: The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a patterned mask layer is formed on a surface of the substrate. Third, the substrate with the patterned mask layer is placed in a microwave plasma system. Fourth, a plurality of etching gases are guided into the microwave plasma system simultaneously to etch the substrate through three stages. The etching gas includes carbon tetrafluoride (CF4), argon (Ar2), and sulfur hexafluoride (SF6). Finally, the patterned mask layer is removed.Type: GrantFiled: October 23, 2012Date of Patent: September 2, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Patent number: 8801946Abstract: A method for making grating is provided. The method includes following steps. A substrate is provided. A mask layer is located on the substrate. The mask layer is patterned, and a number of bar-shaped protruding structures are formed on a surface of the mask layer, a slot is defined between each of two adjacent protruding structures of the number of protruding structures to expose a portion of the substrate. The protruding structures are etched so that each of two adjacent protruding structures begin to slant face to face until they are contacting each other. The exposed portion of the substrate is etched through the slot. The mask layer is removed.Type: GrantFiled: April 8, 2013Date of Patent: August 12, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Patent number: 8796716Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: GrantFiled: May 23, 2012Date of Patent: August 5, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan
-
Patent number: 8790940Abstract: A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.Type: GrantFiled: May 23, 2012Date of Patent: July 29, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Dong Zhu, Qun-Qing Li, Li-Hui Zhang, Mo Chen, Shou-Shan Fan