Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: The lighting system according to the present invention includes an electrical wiring substrate in which a connector to a power source is formed, a plurality of LED chips mounted in a predetermined array pattern on the electrical wiring substrate, a deflection lens array disposed in proximity to the LED chips between the LED chip and the predetermined illumination region and a housing for receiving the electrical wiring substrate and the deflection lens array. A plurality of deflection lenses are integrally molded in the deflection lens array to lead lights from the LED chips to the predetermined illumination region in a state where the lights from the LED chips are superposed with each other. The lights emitted from the LED chips are collected in a state where they all are superposed in a common, single illumination region through the deflection lenses.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: A lighting apparatus which improves identification of living body tissues, and is suitable for medical lighting. In the lighting apparatus, the light output in a range of wavelength 525 to 590 nm is not greater than ? of the light output in a range of wavelength 380 to 780 nm corresponding to visible light components. The peak wavelength of a blue or bluish green light component included in the output light is in a range of 430 to 520 nm, and the peak wavelength of a red light component is not less than 600 nm. A green light component has the peak in a range of wavelength 520 to 590 nm, its spectral half-value width is not greater than 70 nm, and the light amount of at least the green light component can be independently adjusted.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu); contains the another elements.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: A light emitting device includes a substrate provided with a conductor wiring, a light emitting element mounted on the substrate and a light reflecting resin member configured and arranged to reflect light emitted from the light emitting element. The light emitting device also includes at least one of an electrically conductive wire electrically connecting the conductor wiring and the light emitting element, an exposed region of the substrate on which the conductor wiring is not disposed, and a protective element mounted on the conductor wiring. At least a part of the electrically conductive wire, the exposed region or the protective element is buried in the light reflecting resin member.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: The lighting system according to the present invention includes an electrical wiring substrate in which a connector to a power source is formed, a plurality of LED chips mounted in a predetermined array pattern on the electrical wiring substrate, a deflection lens array disposed in proximity to the LED chips between the LED chip and the predetermined illumination region and a housing for receiving the electrical wiring substrate and the deflection lens array. A plurality of deflection lenses are integrally molded in the deflection lens array to lead lights from the LED chips to the predetermined illumination region in a state where the lights from the LED chips are superposed with each other. The lights emitted from the LED chips are collected in a state where they all are superposed in a common, single illumination region through the deflection lenses.

Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: The light distribution pattern for a vehicle having a predetermined horizontal cut-off line section at the top portion on one side of the vertical central line and an oblique cut-off line section whose central line side is lowered in another side. The light distribution pattern of the light source is formed by arranging a plurality of semiconductor light emitting devices with a configuration almost the same shape as the light distribution pattern for a vehicle. The semiconductor light emitting device has a luminance surface whose configuration is almost the same shape as the light distribution pattern for a vehicle. Further, the light source comprising the semiconductor light emitting device includes a fluorescent material whose excitation source is the emission from the nitride semiconductor device and a part of region of the fluorescent material emits light with higher luminance or higher color rendering properties compared with the other regions.

Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.