Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer, and where the growth number of the first well layer is more than the growth number of the second well layer.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y?(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: A semiconductor device has at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type layered on a substrate. Electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type. A first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, with the second electrode surrounding the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed inside of the outline of the first electrode. According to such structure, it is possible to realize a device having high luminous efficiency in use and high reliability.

Abstract: The present invention provides a lighting apparatus which improves identification of living body tissues, and is suitable for medical lighting. In the lighting apparatus, the light output in a range of wavelength 525 to 590 nm is not greater than ? of the light output in a range of wavelength 380 to 780 nm corresponding to visible light components. The peak wavelength of a blue or bluish green light component included in the output light is in a range 430 to 520 nm, and the peak wavelength of a red light component is not less than 600 nm. A green light component has the peak in a range of wavelength 520 to 590 nm, its spectral half-value width is not greater than 70 nm, and the light amount of at least the green light component can be independently adjusted.

Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: The light distribution pattern for a vehicle having a predetermined horizontal cut-off line section at the top portion on one side of the vertical central line and an oblique cut-off line section whose central line side is lowered in another side, and the light distribution pattern of the light source comprising a plurality of semiconductor light emitting devices are almost the same shape. Moreover, the light distribution pattern of the light source is formed by arranging a plurality of semiconductor light emitting devices with a configuration almost the same shape as the light distribution pattern for a vehicle. The semiconductor light emitting device has a luminance surface whose configuration is almost the same shape as the light distribution pattern for a vehicle.

Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.

Abstract: To provide a phosphor containing a comparatively much red component and having high light emitting efficiency, high brightness and further high durability, the nitride phosphor is represented by the general formula LXMYN((2/3)X+(4/3)Y):R or LXMYOZN((2/3)X+(4/3)Y−(2/3)Z):R (wherein L is at least one or more selected from the Group II Elements consisting of Mg, Ca, Sr, Ba and Zn, M is at least one or more selected from the Group IV Elements in which Si is essential among C, Si and Ge, and R is at least one or more selected from the rare earth elements in which Eu is essential among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er and Lu.); contains the another elements.

Abstract: Microarea light-emitting diodes, which have no variation in light output power the like due to mode-hopping, are used and changes in properties such as light output and the like due to generated heat are prevented. Pulses having a constant period and a substantially constant power are used, a number of the pulses within a period for forming an image corresponding to one pixel is determined on the basis of image data, and light beams emitted from the microarea light-emitting diodes are modulated by pulse signals including the determined pulses.

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type semiconductor layer, characterized in that the active layer comprises an well layer made of Inx1Ga1−x1N (x1>0) containing In and a first barrier layer made of Aly2Ga1−y2N (y2>0) containing Al formed on the well layer.

Abstract: In a semiconductor device wherein at least a GaN system semiconductor having n-conductivity type and a GaN system semiconductor having p-conductivity type are layered on a substrate, and electrodes are formed on both surfaces of the GaN system semiconductor layer having n-conductivity type and the GaN system semiconductor layer having p-conductivity type; and a first electrode including at least silver and a second electrode excluding silver are formed on the surface of the GaN system semiconductor layer having p-conductivity type, respectively, and the second electrode surrounds the periphery of the first electrode. In addition, the first electrode has an opening at which the GaN system semiconductor layer having p-conductivity type is exposed, inside from the outline of the first electrode.

Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer, and where the growth number of the first well layer is more than the growth number of the second well layer.

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: First and second well layers of a light emitting device emit light of different peak wavelengths so as to produce a mixed light, such as white light having high luminous intensity and high luminous efficiency. A color rendering property of the device can be controlled by adjusting the ratio of the growth numbers of the first and second well layers, and/or the thickness of the barrier layers sandwiching the well layers. The color rendering property can also be controlled by forming the second well layer so as to have a degree of asperity greater than that of the first well layer, or so that a degree of area occupied by dished portions having a thickness which is less than half of an average thickness over a total surface is not less than 10%.

Abstract: A light emitting device includes an active layer, having a multiple quantum well structure, sandwiched between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes first and second well layers made of a nitride compound semiconductor containing In, where the second well layer emits light having a main peak wavelength which is longer than that of the first well layer. The active layer also includes an intervening barrier layer disposed between the first and second well layers, and first and second barrier layers. The first well layer isg sandwiched between the first barrier layer and the intervening barrier layer, and the second well layer is sandwiched between the second barrier layer and the intervening barrier layer. A thickness of said first barrier layer is different than a thickness of said second barrier layer.

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract: A high external quantum efficiency is stably secured in a semiconductor light emitting device. At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in semiconductor layers.