Abstract: Various implementations described herein are directed to an integrated circuit (IC) having a design that is severable into multiple sub-circuits having input-output (IO) ports. The integrated circuit (IC) may include multiple physical electrical connections that are adapted to electrically interconnect the IO ports of the multiple sub-circuits to operate as the IC, and the IO ports have three-dimensional (3D) geometric position information associated therewith.

Abstract: In a particular implementation, a method of storing dynamic random-access memory (DRAM) data in respective magneto-electric magnetic tunnel junctions (ME-MTJ) of D-MRAM bit-cells of a D-MRAM bit-cell memory array, the method comprising: for each of the D-MRAM bit-cells: writing a first data value in a storage capacitor; and in a first cycle, providing a first voltage to a source line coupled to an ME-MTJ, wherein in response to the storage capacitor storing the first data value, the ME-MTJ is configured to store the first data value if the first voltage generates a voltage difference between first and second terminals of the ME-MTJ.

Abstract: In a particular implementation, a method of storing dynamic random-access memory (DRAM) data in respective magneto-electric magnetic tunnel junctions (ME-MTJ) of D-MRAM bit-cells of a D-MRAM bit-cell memory array, the method comprising: for each of the D-MRAM bit-cells: writing a first data value in a storage capacitor; and in a first cycle, providing a first voltage to a source line coupled to an ME-MTJ, wherein in response to the storage capacitor storing the first data value, the ME-MTJ is configured to store the first data value if the first voltage generates a voltage difference between first and second terminals of the ME-MTJ.

Abstract: Briefly, embodiments of claimed subject matter relate to backup of parameters, such as binary logic values, stored in nonvolatile memory, such as one or more SRAM cells. Binary logic values from a SRAM cell, for example, may be stored utilizing resistance states of a magnetic random-access memory (MRAM) element. Parameters stored in one or more MRAM elements may be restored to SRAM memory cells following a backup.

Abstract: A multi-die integrated circuit with improved testability can include at least two dies that combined comprise an integrated circuit for a self-contained system, which includes logic and design-for-test features. The integrated circuit is split into at least two portions, where each portion is disposed on a corresponding one of the at least two dies. As part of the improved testability for both pre-bond testing of logic and post-bond testing of inter-die connections, at least one of the at least two dies further comprises a split-circuit-boundary scan chain. An automated design tool can be used to determine optimal ways for the integrated circuit for a self-contained system to be split into at least two portions for the corresponding at least two dies. In addition, a split-circuit-boundary scan chain option can be applied for each portion, via the automated design tool, to ensure boundary scans are available on timing paths.

Abstract: In a particular implementation, a method to perform a read operation on a voltage divider bit-cell having first and second transistors and first and second storage elements is disclosed. The method includes: providing a first voltage to a bit-line coupled to the second transistor of the voltage-divider bit-cell; providing a second voltage to a first word-line and providing an electrical grounding to a second word-line; where the first and second word-lines are coupled to the respective first and second resistive memory devices; and determining at least one of first and second data resistances in the respective first and second storage elements based on an output voltage on the bit-line.

Abstract: In a particular implementation, a method to perform a read operation on a voltage divider bit-cell having first and second transistors and first and second storage elements is disclosed. The method includes: providing a first voltage to a bit-line coupled to the second transistor of the voltage-divider bit-cell; providing a second voltage to a first word-line and providing an electrical grounding to a second word-line; where the first and second word-lines are coupled to the respective first and second resistive memory devices; and determining at least one of first and second data resistances in the respective first and second storage elements based on an output voltage on the bit-line.

Abstract: A method and apparatus is provided for wear leveling of a storage medium in an electronic device. Wear leveling is achieved by mapping each logical memory address to a corresponding physical memory address. The mapping information is consistent over an on-period of a power cycle, but changes from one power cycle to another. The mapping information, such as a key value for example, may be stored in non-volatile memory such as, for example, a correlated electron random switch (CES) storage element. The mapping may be obtained by manipulating bits of the logical address to obtain the physical address.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

Abstract: Disclosed are techniques for forming and operating magnetic memory devices.

Abstract: Disclosed are devices and techniques for facilitating transmission of light signals between optical waveguides formed on integrated circuit (IC) devices. In an implementation, one or more first waveguides may be formed in a structure such that at least a portion of the one or more first waveguides are exposed for optical connectivity. The structure may comprise first features to enable the structure to be interlocked with an IC device comprising second features complementary with the first features, so as to align at least a portion of the one or more first waveguides exposed to optically couple with one or more second waveguides formed in the first integrated circuit device.

Abstract: Disclosed are devices and techniques for facilitating transmission of light signals between optical waveguides formed on integrated circuit (IC) devices. In an implementation, one or more first waveguides may be formed in a structure such that at least a portion of the one or more first waveguides are exposed for optical connectivity. The structure may comprise first features to enable the structure to be interlocked with an IC device comprising second features complementary with the first features, so as to align at least a portion of the one or more first waveguides exposed to optically couple with one or more second waveguides formed in the first integrated circuit device.

Abstract: Briefly, embodiments of claimed subject matter relate to backup of parameters, such as binary logic values, stored in nonvolatile memory, such as one or more SRAM cells. Binary logic values from a SRAM cell, for example, may be stored utilizing resistance states of a magnetic random-access memory (MRAM) element. Parameters stored in one or more MRAM elements may be restored to SRAM memory cells following a backup.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

Abstract: In a particular implementation, a method to perform a read operation on a magneto-resistive random-access memory (MRAM) bit-cell includes: providing a voltage signal across one or more storage elements of the MRAM bit-cell, determining an electrical resistance of the one or more storage elements of the MRAM bit-cell, and removing the voltage signal from the MRAM bit-cell prior to an end of an incubation delay interval.

Abstract: Various implementations described herein refer to an integrated circuit having a bitcell coupled to a bitline. The integrated circuit may include a write driver coupled to the bitline for writing data to the bitcell. The write driver may have an inverter and a clamping device that are arranged to clamp current after data has been written to the bitcell.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, bit positions of a portion of a memory array may be placed in a first value state. Values to be written to the bit positions may be determined subsequent to placement of the bit positions in the first value state. Values at selected ones of the bit positions may then be changed from the first value state to a second value state while maintaining remaining unselected ones of the bit positions in the first value state so that the bit positions store or represent the values determined to be written to the bit positions.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, a signal may have an amplitude within a continuous amplitude range, and a non-volatile memory element may be placed in an impedance state representing the amplitude. The amplitude of the signal may be recovered based, at least in part, on the impedance state of the correlated electron element.

Abstract: Disclosed are methods, systems and devices for operation of correlated electron switch (CES) devices. In one aspect, a CES device may be placed in any one of multiple impedance states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. In one implementation, a CES device may be placed in a high impedance or insulative state, or two more distinguishable low impedance or conductive states.