Abstract: A protected circuit includes a logic circuit having one or more input nodes and one or more output nodes. The logic circuit has a network of logic elements and one or more logic encryption elements. A logic encryption element includes a memory cell, such as a correlated electron switch for example, coupled with a configurable sub-circuit that is configured by a value stored in the memory cell to encrypt a signal or a signal path. A mapping of values at the one or more input nodes to values at the one or more output nodes corresponds to a desired mapping when values stored in the one or more memory cells match component values of a prescribed key vector. The memory cells may be programmed after fabrication of the circuit.

Abstract: Subject matter provided may relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline.

Abstract: Disclosed are methods, systems and devices for operation of correlated electron switch (CES) devices. In one aspect, a CES device may be placed in any one of multiple impedance states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. In one implementation, a CES device may be placed in a high impedance or insulative state, or two more distinguishable low impedance or conductive states.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: A method and apparatus is provided for wear leveling of a storage medium in an electronic device. Wear leveling is achieved by mapping each logical memory address to a corresponding physical memory address. The mapping information is consistent over an on-period of a power cycle, but changes from one power cycle to another. The mapping information, such as a key value for example, may be stored in non-volatile memory such as, for example, a correlated electron random switch (CES) storage element. The mapping may be obtained by manipulating bits of the logical address to obtain the physical address.

Abstract: An apparatus is provided for testing storage elements that include a variable impedance element switchable between a first impedance state and a second impedance state. The apparatus includes an interconnect circuit for coupling storage elements in a selected arrangement. The apparatus includes an impedance sensing circuit operable to measure at least a resistive component of an impedance of the coupled storage elements and a test controller operable to configure the interconnect circuit and initiate measurement of the combined impedance of the coupled storage elements by the impedance sensing circuit. The impedance sensing circuit compares the measured impedance with at least a resistive component of an expected impedance. The storage elements and apparatus may form part of an integrated circuit. A storage element may include a correlated electron switch, for example.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to compensating for integrated circuit manufacturing process variation with correlated electron switch devices.

Abstract: Various implementations described herein may refer to and may be directed to error detection circuitry for use with memory. In one implementation, an integrated circuit may include a memory array having a plurality of rows of memory cells, where a respective row is configured to store a data word and one or more check bits corresponding to the data word. The integrated circuit may also include inline error detection circuitry coupled to the respective row and configured to generate one or more flag bit values based on a detection of one or more bit errors in the data word stored in the respective row. The integrated circuit may further include error correction circuitry configured to correct the one or more bit errors in the data word stored in the respective row in response to the one or more generated flag bit values.

Abstract: An integrated circuit is provided for self-repair of a memory array. The circuit includes first word lines coupled to first memory rows of the memory array, one first word line for each bit of a line address word, second word lines coupled to one or more spare memory rows of the memory array. Repair configuration data is stored in memory cells within the integrated circuit to direct memory accesses to spare memory rows rather than dysfunctional first memory rows. A memory cell may be based on a correlated electron switch (CES). A built-in self-test circuit is provided to facilitate setting of repair configuration data. The repair data may be reconfigurable, enabling operating margins to be improved by testing under various operating conditions.

Abstract: An integrated circuit is provided for self-repair of a memory array. The circuit includes first word lines coupled to first memory rows of the memory array, one first word line for each bit of a line address word, second word lines coupled to one or more spare memory rows of the memory array. Repair configuration data is stored in memory cells within the integrated circuit to direct memory accesses to spare memory rows rather than dysfunctional first memory rows. A memory cell may be based on a correlated electron switch (CES). A built-in self-test circuit is provided to facilitate setting of repair configuration data. The repair data may be reconfigurable, enabling operating margins to be improved by testing under various operating conditions.

Abstract: A memory 2 includes a regular array of storage elements 4. A regular array of write multiplexers 8 is provided outside of the regular array of storage elements 4. The storage element pitch is matched to the write multiplexer pitch. The write multiplexers 10 support a plurality of write ports. When forming a memory design 2, a given instance of an array of write multiplexers 8 may be selected in dependence upon the desired number of write ports to support and this combined with a common form of storage element array 4.

Abstract: An electrical component is formed with a directed self assembly portion having a random electrical characteristic, such as resistance or capacitance. The random pattern can be produced by using a directed self assembly polymer with guide structures 2 including randomness inducing features. The electrical components with the random electrical characteristics may be used in electrical circuits relying upon random variation in electrical characteristics, such as physically unclonable function circuitry. The electrical components may be resistors and/or capacitors.

Abstract: Various implementations described herein are directed to an integrated circuit for address decoding. The integrated circuit may include an input circuit configured to provide an encoded address via multiple address lines. The integrated circuit may include an address decoding circuit configured to directly translate the encoded address provided via the multiple address lines. The address decoding circuit may include multiple decoding blocks with each block having a first stage coupled to a second stage. The first stage of each block may include a first number of decoding transistors configured to decode first address bit values from the multiple address lines. The second stage of each block may include a second number of decoding transistors configured to decode second address data bit values from the multiple address lines. The integrated circuit may include an output circuit configured to provide a decoded address to a wordline driver circuit in memory.

Abstract: In some aspects, a method includes obtaining, by a response generator circuit, reliability information for each bit of an array of bits provided by a physical unclonable function (PUF) circuit; receiving, from the PUF circuit during run time, an array of values for the array of bits; selecting a plurality of values from the array of values received from the PUF circuit in accordance with the reliability information; and generating, by the response generator circuit, a PUF response from the selected plurality of values.

Abstract: Various implementations described herein are directed to an integrated circuit for address decoding. The integrated circuit may include an input circuit configured to provide an encoded address via multiple address lines. The integrated circuit may include an address decoding circuit configured to directly translate the encoded address provided via the multiple address lines. The address decoding circuit may include multiple decoding blocks with each block having a first stage coupled to a second stage. The first stage of each block may include a first number of decoding transistors configured to decode first address bit values from the multiple address lines. The second stage of each block may include a second number of decoding transistors configured to decode second address data bit values from the multiple address lines. The integrated circuit may include an output circuit configured to provide a decoded address to a wordline driver circuit in memory.

Abstract: Various implementations described herein may refer to and may be directed to error detection circuitry for use with memory. In one implementation, an integrated circuit may include a memory array having a plurality of rows of memory cells, where a respective row is configured to store a data word and one or more check bits corresponding to the data word. The integrated circuit may also include inline error detection circuitry coupled to the respective row and configured to generate one or more flag bit values based on a detection of one or more bit errors in the data word stored in the respective row. The integrated circuit may further include error correction circuitry configured to correct the one or more bit errors in the data word stored in the respective row in response to the one or more generated flag bit values.

Abstract: Techniques and circuits are disclosed for obtaining a physical unclonable function (PUF) circuit that is configured to provide, during a first operational mode, an output signal that is dependent on an electric characteristic of the PUF circuit. Techniques and circuits described herein can cause the PUF circuit to enter a second operational mode by applying a stress signal to the PUF circuit that changes a value of the electric characteristic relative to another value of the electric characteristic during the first operational mode of the PUF circuit; and adjusting, based on changing the absolute value of the first electric characteristic, a bias magnitude of the output signal relative to another bias magnitude of the output signal during the first operational mode of the PUF circuit.

Abstract: A memory 2 includes a regular array of storage elements 4. A regular array of write multiplexers 8 is provided outside of the regular array of storage elements 4. The storage element pitch is matched to the write multiplexer pitch. The write multiplexers 10 support a plurality of write ports. When forming a memory design 2, a given instance of an array of write multiplexers 8 may be selected in dependence upon the desired number of write ports to support and this combined with a common form of storage element array 4.

Abstract: An electrical component is formed with a directed self assembly portion having a random electrical characteristic, such as resistance or capacitance. The random pattern can be produced by using a directed self assembly polymer with guide structures 2 including randomness inducing features. The electrical components with the random electrical characteristics may be used in electrical circuits relying upon random variation in electrical characteristics, such as physically unclonable function circuitry. The electrical components may be resistors and/or capacitors.