Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate transfer of stored values between the volatile and non-volatile memory bitcells.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, volatile memory bitcells and non-volatile memory bitcells may be integrated to facilitate copying of memory states between the volatile and non-volatile memory bitcells.

Abstract: A protected circuit includes a logic circuit having one or more input nodes and one or more output nodes. The logic circuit has a network of logic elements and one or more logic encryption elements. A logic encryption element includes a memory cell, such as a correlated electron switch for example, coupled with a configurable sub-circuit that is configured by a value stored in the memory cell to encrypt a signal or a signal path. A mapping of values at the one or more input nodes to values at the one or more output nodes corresponds to a desired mapping when values stored in the one or more memory cells match component values of a prescribed key vector. The memory cells may be programmed after fabrication of the circuit.

Abstract: Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to voltage detection with correlated electron switch devices.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to compensating for integrated circuit manufacturing process variation with correlated electron switch devices.

Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analog or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

Abstract: To sense an impedance state of one or more correlated electron switch elements, a bit-line may be precharged to a voltage level that is less than a precharge voltage level for a sense amplifier, and a bit-line may be discharged through one or more correlated electron switch elements. A bit-line may be buffered from a sense amplifier via an electronic switch device.

Abstract: In some aspects, a method includes obtaining, by a response generator circuit, reliability information for each bit of an array of bits provided by a physical unclonable function (PUF) circuit; receiving, from the PUF circuit during run time, an array of values for the array of bits; selecting a plurality of values from the array of values received from the PUF circuit in accordance with the reliability information; and generating, by the response generator circuit, a PUF response from the selected plurality of values.

Abstract: Disclosed are methods, systems and devices for operation of memory device. In one aspect, bit positons of a portion of a memory array may be placed in a first value state. Values to be written to the bit positions may be determined subsequent to placement of the bit positions in the first value state. Values at selected ones of the bit positions may then be changed from the first value state to a second value state while maintaining remaining unselected ones of the bit positions in the first value state so that the bit positions store or represent the values determined to be written to the bit positions.

Abstract: Subject matter disclosed herein may relate to correlated electron switch elements and, more particularly, to controlling current through correlated electron switch elements during programming operations.

Abstract: Disclosed are methods, systems and devices for operation of correlated electron switch (CES) devices. In one aspect, a CES device may be placed in any one of multiple impedance states in a write operation by controlling a current and a voltage applied to terminals of the non-volatile memory device. In one implementation, a CES device may be placed in a high impedance or insulative state, or two more distinguishable low impedance or conductive states.

Abstract: To sense an impedance state of one or more correlated electron switch elements, a bit-line may be precharged to a voltage level that is less than a precharge voltage level for a sense amplifier, and a bit-line may be discharged through one or more correlated electron switch elements. A bit-line may be buffered from a sense amplifier via an electronic switch device.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: Described are methods, systems and devices for operation of correlated electron switch (CES) devices. A CES device may be placed in a conductive or low impedance state, or an insulative or high impedance state. A programming signal may be applied a CES device with a sufficiently high current to permanently place the CES device in the conductive or low impedance state.

Abstract: Described are methods, systems and devices for operation of correlated electron switch (CES) devices. A CES device may be placed in a conductive or low impedance state, or an insulative or high impedance state. A programming signal may be applied a CES device with a sufficiently high current to permanently place the CES device in the conductive or low impedance state.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a sense circuit may enable a determination of a current impedance state of a non-volatile memory element while avoiding an unintentional change in the state of the non-volatile memory element.

Abstract: Techniques and circuits are disclosed for obtaining a physical unclonable function (PUF) circuit that is configured to provide, during a first operational mode, an output signal that is dependent on an electric characteristic of the PUF circuit. Techniques and circuits described herein can cause the PUF circuit to enter a second operational mode by applying a stress signal to the PUF circuit that changes a value of the electric characteristic relative to another value of the electric characteristic during the first operational mode of the PUF circuit; and adjusting, based on changing the absolute value of the first electric characteristic, a bias magnitude of the output signal relative to another bias magnitude of the output signal during the first operational mode of the PUF circuit.

Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analogue or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.