Abstract: Methods, systems, and articles herein are directed to event-driven object segmentation to track events rather than tracking all pixel locations in an image.

Abstract: An apparatus is provided which comprises: a storage node; a first device coupled to the storage node; a second device coupled to a first reference and the storage node, wherein the second device has negative differential resistance (NDR); a third device coupled to a second reference and the storage node, wherein the third device has NDR; and a circuitry for reading data, the circuitry coupled to the storage node and the first, second, and third devices, wherein the first, second, and third devices, and the circuitry are positioned in a backend-of-line (BEOL) of a die.

Abstract: An apparatus is provided which comprises: a first power supply rail to provide a first power supply voltage; a second power supply rail to provide a second power supply voltage, wherein the first power supply voltage is higher than the second power supply voltage; a first circuitry coupled to the first and second supply rails, wherein the first circuitry is to operate using the first supply voltage, and wherein the first circuitry is to inject charge on to the second power supply rail in response to a droop indication; and a second circuitry to detect voltage droop on the second power supply rail, wherein the second circuitry is to generate the droop indication for the first circuitry.

Abstract: Embodiments include apparatuses, methods, and systems associated with biasing a sleep transistor (also referred to as a power gate transistor) in an integrated circuit. The sleep transistor may be coupled between a load circuit and a power rail, the sleep transistor to be on in an active mode to provide the supply voltage to the load circuit, and to be off in a sleep mode to disconnect the load circuit from the power rail. The bias circuit may be coupled to the gate terminal of the sleep transistor to provide a calibrated gate voltage to the gate terminal during the sleep mode. The calibrated gate voltage may be based on a subthreshold leakage current and a gate-induced drain leakage (GIDL) current of the sleep transistor or a replica sleep transistor designed to replicate the leakage current of the sleep transistor. Other embodiments may be described and claimed.

Abstract: An apparatus is provided which comprises: a first power supply rail to provide a first power supply voltage; a second power supply rail to provide a second power supply voltage, wherein the first power supply voltage is higher than the second power supply voltage; a first circuitry coupled to the first and second supply rails, wherein the first circuitry is to operate using the first supply voltage, and wherein the first circuitry is to inject charge on to the second power supply rail in response to a droop indication; and a second circuitry to detect voltage droop on the second power supply rail, wherein the second circuitry is to generate the droop indication for the first circuitry.

Abstract: An example apparatus for detecting keywords in audio includes an audio receiver to receive audio comprising a keyword to be detected. The apparatus also includes a spike transducer to convert the audio into a plurality of spikes. The apparatus further includes a spiking neural network to receive one or more of the spikes and generate a spike corresponding to a detected keyword.

Abstract: An apparatus is provided which comprises: a first device coupled to a first power supply rail; a second device coupled in series with the first device, wherein the second device is coupled to a second power supply rail; and a third device coupled to the first and second power supply rails, wherein the first device is controllable by a first input, wherein the second device is controllable by a second input, wherein the third device is controllable by a third input, and wherein the first input is an analog bias between a high power supply level and a ground supply level.

Abstract: An apparatus comprising: a flip-flip comprising a master stage and a slave stage, wherein the slave stage is coupled to the master stage, wherein the master and slave stages are coupled to a first power supply rail; and a scan circuitry coupled to the slave stage of the flip-flip, wherein at least a portion of the scan circuitry is coupled to a second power supply rail.

Abstract: An example apparatus for detecting keywords in audio includes an audio receiver to receive audio comprising a keyword to be detected. The apparatus also includes a spike transducer to convert the audio into a plurality of spikes. The apparatus further includes a spiking neural network to receive one or more of the spikes and generate a spike corresponding to a detected keyword.

Abstract: A system, article, and method provide temporal-domain feature extraction for automatic speech recognition.

Abstract: Embodiments include apparatuses, methods, and systems associated with biasing a sleep transistor (also referred to as a power gate transistor) in an integrated circuit. The sleep transistor may be coupled between a load circuit and a power rail, the sleep transistor to be on in an active mode to provide the supply voltage to the load circuit, and to be off in a sleep mode to disconnect the load circuit from the power rail. The bias circuit may be coupled to the gate terminal of the sleep transistor to provide a calibrated gate voltage to the gate terminal during the sleep mode. The calibrated gate voltage may be based on a subthreshold leakage current and a gate-induced drain leakage (GIDL) current of the sleep transistor or a replica sleep transistor designed to replicate the leakage current of the sleep transistor. Other embodiments may be described and claimed.

Abstract: An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.

Abstract: An apparatus is provided which includes: a first power supply node; a second power supply node; a memory bit-cell coupled to the second power supply node; a circuitry coupled to the first and second power supply nodes, the circuitry to operate in a diode-connected mode; and a transistor coupled in parallel to the circuitry, wherein the transistor is controllable by a digital signal such that when the transistor is to turn on, it is to apply voltage and/or current stress to the memory bit-cell.

Abstract: An apparatus is provided which includes: a first power supply node; a second power supply node; a memory bit-cell coupled to the second power supply node; a circuitry coupled to the first and second power supply nodes, the circuitry to operate in a diode-connected mode; and a transistor coupled in parallel to the circuitry, wherein the transistor is controllable by a digital signal such that when the transistor is to turn on, it is to apply voltage and/or current stress to the memory bit-cell.

Abstract: An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.

Abstract: Described is an apparatus including memory cell with retention using resistive memory. The apparatus comprises: memory element including a first inverting device cross-coupled to a second inverting device; a restore circuit having at least one resistive memory element, the restore circuit coupled to an output of the first inverting device; a third inverting device coupled to the output of the first inverting device; a fourth inverting device coupled to an output of the third inverting device; and a save circuit having at least one resistive memory element, the save circuit coupled to an output of the third inverting device.

Abstract: Embodiments include apparatuses, methods, and systems related to an assist circuit that may be coupled to one or more components of a memory system to selectively lower a supply voltage that is delivered to the component. For example, the assist circuit may be coupled to a plurality of bitcells (e.g., register file bitcells). The assist circuit may selectively lower the supply voltage delivered to the bitcells during at least a portion of a write operation and/or during an inactive state of the bitcells. Additionally, or alternatively, the assist circuit may be coupled to a read circuit to selectively lower the supply voltage delivered to the read circuit during an inactive state of the read circuit. The assist circuit may include a control transistor coupled in parallel with one or more diodes between a main supply rail and a supply node of the bitcells and/or read circuit.

Abstract: Described is an apparatus including memory cell with retention using resistive memory. The apparatus comprises: memory element including a first inverting device cross-coupled to a second inverting device; a restore circuit having at least one resistive memory element, the restore circuit coupled to an output of the first inverting device; a third inverting device coupled to the output of the first inverting device; a fourth inverting device coupled to an output of the third inverting device; and a save circuit having at least one resistive memory element, the save circuit coupled to an output of the third inverting device.

Abstract: Embodiments include apparatuses, methods, and systems related to an assist circuit that may be coupled to one or more components of a memory system to selectively lower a supply voltage that is delivered to the component. For example, the assist circuit may be coupled to a plurality of bitcells (e.g., register file bitcells). The assist circuit may selectively lower the supply voltage delivered to the bitcells during at least a portion of a write operation and/or during an inactive state of the bitcells. Additionally, or alternatively, the assist circuit may be coupled to a read circuit to selectively lower the supply voltage delivered to the read circuit during an inactive state of the read circuit. The assist circuit may include a control transistor coupled in parallel with one or more diodes between a main supply rail and a supply node of the bitcells and/or read circuit.

Abstract: Embodiments include apparatuses, methods, and systems related to an assist circuit that may be coupled to one or more components of a memory system to selectively lower a supply voltage that is delivered to the component. For example, the assist circuit may be coupled to a plurality of bitcells (e.g., register file bitcells). The assist circuit may selectively lower the supply voltage delivered to the bitcells during at least a portion of a write operation and/or during an inactive state of the bitcells. Additionally, or alternatively, the assist circuit may be coupled to a read circuit to selectively lower the supply voltage delivered to the read circuit during an inactive state of the read circuit. The assist circuit may include a control transistor coupled in parallel with one or more diodes between a main supply rail and a supply node of the bitcells and/or read circuit.