Abstract: Embodiments include apparatuses, methods, and systems related to an assist circuit that may be coupled to one or more components of a memory system to selectively lower a supply voltage that is delivered to the component. For example, the assist circuit may be coupled to a plurality of bitcells (e.g., register file bitcells). The assist circuit may selectively lower the supply voltage delivered to the bitcells during at least a portion of a write operation and/or during an inactive state of the bitcells. Additionally, or alternatively, the assist circuit may be coupled to a read circuit to selectively lower the supply voltage delivered to the read circuit during an inactive state of the read circuit. The assist circuit may include a control transistor coupled in parallel with one or more diodes between a main supply rail and a supply node of the bitcells and/or read circuit.

Abstract: Embodiments include apparatuses, methods, and systems related to an assist circuit that may be coupled to one or more components of a memory system to selectively lower a supply voltage that is delivered to the component. For example, the assist circuit may be coupled to a plurality of bitcells (e.g., register file bitcells). The assist circuit may selectively lower the supply voltage delivered to the bitcells during at least a portion of a write operation and/or during an inactive state of the bitcells. Additionally, or alternatively, the assist circuit may be coupled to a read circuit to selectively lower the supply voltage delivered to the read circuit during an inactive state of the read circuit. The assist circuit may include a control transistor coupled in parallel with one or more diodes between a main supply rail and a supply node of the bitcells and/or read circuit.

Abstract: Described herein is an apparatus for adjusting a power supply level for a memory cell to improve stability of a memory unit. The apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error.

Abstract: Described herein is an apparatus for adjusting a power supply level for a memory cell to improve stability of a memory unit. The apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error.

Abstract: A register file employing a shared supply structure to improve the minimum supply voltage.

Abstract: Provided herein is a new RF implementation. Instead of using a pre-charged High node for one or more of its evaluation nodes, it employs an evaluation (or evaluate) node that is discharged (Low) prior to evaluation and enters evaluation in a discharged state. In some embodiments, with such “normally Low” evaluation nodes, it uses pull-up stack devices, rather than pull-down devices, to charge the evaluate node during an evaluate phase if the logic so dictates.

Abstract: Described herein is an apparatus for adjusting a power supply level for a memory cell to improve stability of a memory unit. The apparatus comprises memory circuitry including memory cells, error detection circuitry to detect error in data stored by memory cells of the memory circuitry, and supply voltage control circuitry to increase supply voltage for one or more memory cells of the memory circuitry based at least in part on detected error.

Abstract: A processor may comprise a cache, which may be divided into a first and second section while the processor operates in a low-power mode. A cache line of the first section may be fragmented into segments. A first encoder may generate first data bits and check bits while encoding a first portion of a data stream and a second encoder may, separately, generate second data bits and check bits while encoding a second portion of the data stream. The first data bits may be stored in a first segment of the first section and the check bits in a first portion of the second section that is associated with the first segment. The first decoder may correct errors in multiple bit positions within the first data bits using the check bits stored in the first portion and the second decoder may, separately, decode the second data bits using the second set of check bits.

Abstract: A register file employing a shared supply structure to improve the minimum supply voltage.

Abstract: Methods and apparatus relating to disabling one or more cache portions during low voltage operations are described. In some embodiments, one or more extra bits may be used for a portion of a cache that indicate whether the portion of the cache is capable at operating at or below Vccmin levels. Other embodiments are also described and claimed.

Abstract: A register file employing a shared supply structure to improve the minimum supply voltage.

Abstract: Provided herein is a new RF implementation. Instead of using a pre-charged High node for one or more of its evaluation nodes, it employs an evaluation (or evaluate) node that is discharged (Low) prior to evaluation and enters evaluation in a discharged state. In some embodiments, with such “normally Low” evaluation nodes, it uses pull-up stack devices, rather than pull-down devices, to charge the evaluate node during an evaluate phase if the logic so dictates.

Abstract: A processor may comprise a cache, which may be divided into a first and second section while the processor operates in a low-power mode. A cache line of the first section may be fragmented into segments. A first encoder may generate first data bits and check bits while encoding a first portion of a data stream and a second encoder may, separately, generate second data bits and check bits while encoding a second portion of the data stream. The first data bits may be stored in a first segment of the first section and the check bits in a first portion of the second section that is associated with the first segment. The first decoder may correct errors in multiple bit positions within the first data bits using the check bits stored in the first portion and the second decoder may, separately, decode the second data bits using the second set of check bits.

Abstract: For one disclosed embodiment, an apparatus may comprise a memory cell to store a bit value, wherein the memory cell may lose the bit value in response to a memory access operation. The apparatus may also comprise first circuitry to detect whether the memory cell loses the bit value in response to the memory access operation and second circuitry to restore the bit value in the memory cell in response to detection that the memory cell loses the bit value. Other embodiments are also disclosed.

Abstract: According to embodiments of the present invention, a one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. In on embodiment, access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.

Abstract: For one disclosed embodiment, an apparatus comprises a first p-type device coupled between a cell voltage node and a storage node, an n-type device coupled between the storage node and a reference voltage node, and a second p-type device to couple the storage node to a bit line in response to a signal on a select line. At least one side of diffusion regions in a substrate to form both the first p-type device and the second p-type device are substantially aligned. Other embodiments are also disclosed.

Abstract: A cell in an information storage cell array is written, by asserting a signal on a bit line that is coupled to the cell and to a group of other cells in the array, to a first voltage. The cell is read by asserting a signal on a word line that is coupled to the cell and to another group of cells in the array, in a direction of, but without reaching, the first voltage. Other embodiments are also described and claimed.

Abstract: A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.

Abstract: In some embodiments, a memory array is provided comprising columns of SRAM bit cells, the columns each comprising a bit line and a sense amplifier coupled to the bit line, the sense amplifier to maintain a state in a selected cell of its bit line during a read operation. Other embodiments are disclosed herein.

Abstract: A system includes a pull-up circuit to program a memory cell. The pull-up circuit may include a level shifter to receive a control signal, a supply voltage, and one or more of a plurality of rail voltages, each of the plurality of rail voltages substantially equal to a respective integer multiple of the supply voltage, and to generate a second control signal, and a cascode stage. The cascode stage may include a plurality of transistors, a gate voltage of each of the plurality of transistors to be controlled at least in part by a respective one of the second control signal, the supply voltage, and at least one of the plurality of rail voltages, and an output node to provide a cell programming signal.