Patents by Inventor Myung Sun Kim

Myung Sun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190382439
    Abstract: The present invention relates to a method for prolonging half-life of a protein or a (poly)peptide by replacing one or more amino acid residues of the protein. Further, the present invention is about the protein having a prolonged half-life prepared by the method above.
    Type: Application
    Filed: October 30, 2016
    Publication date: December 19, 2019
    Inventors: Kyunggon Kim, Kwang-Hyun Baek, Sung-Ryul Bae, Myung-Sun Kim, Hyeonmi Kim, Yeeun Yoo, Lan Li, Jung-Hyun Park, Jin-Ok Kim
  • Patent number: 10379866
    Abstract: An electronic apparatus generating compiled data used in a very long instruction word (VLIW) processor including a plurality of function units is provided. The electronic apparatus includes a storage and a processor configured to control the storage to store the compiled data in which a plurality of VLIW instructions are compiled, identify a VLIW instruction from the compiled data; and update, if a multi-cycle no operation (nop) instruction for the plurality of function units is identified within a cycle corresponding to a latency of the identified VLIW instruction and if an end cycle of another VLIW instruction is within the cycle corresponding to the latency of the identified VLIW instruction, the compiled data by including information on a cycle difference between an end cycle of the identified VLIW instruction and the end cycle of the another VLIW instruction in the multi-cycle nop instruction.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: August 13, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jong-hun Lee, Jae-un Park, Si-hoon Song, Myung-sun Kim
  • Publication number: 20190196893
    Abstract: A method performed by an appliance includes receiving, from a managing server, information about a data pattern detection routine to detect abnormal data among operation data of the appliance, determining whether the operation data of the appliance matches a normal data pattern defined by the data pattern detection routine, determining the operation data as the abnormal data when the operation data does not match the normal data pattern, and transmitting the abnormal data to the managing server.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 27, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Hun LEE, Myung-Sun KIM, Ayush JAIN, Tae-Ho HWANG, Jae-Hong KIM, Hye-Jung CHO
  • Patent number: 10331455
    Abstract: An electronic apparatus generating compiled data used in a very long instruction word (VLIW) processor including a plurality of function units is provided. The electronic apparatus includes a storage and a processor configured to control the storage to store the compiled data in which a plurality of VLIW instructions are compiled, identify a VLIW instruction from the compiled data; and update, if a multi-cycle no operation (nop) instruction for the plurality of function units is identified within a cycle corresponding to a latency of the identified VLIW instruction and if an end cycle of another VLIW instruction is within the cycle corresponding to the latency of the identified VLIW instruction, the compiled data by including information on a cycle difference between an end cycle of the identified VLIW instruction and the end cycle of the another VLIW instruction in the multi-cycle nop instruction.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: June 25, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jong-hun Lee, Jae-un Park, Si-hoon Song, Myung-sun Kim
  • Patent number: 10198592
    Abstract: A method for managing data by an electronic device is provided. The method includes receiving first data inputted from a user, generating second data by encrypting the first data using a public key, generating a query comprising the second data, transmitting the query to a server, receiving third data corresponding to the query from the server, generating fourth data by decrypting the third data using a secret key corresponding to the public key, and outputting the fourth data.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: February 5, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-Woo Seo, Jung-Hee Cheon, Mi-Ran Kim, Myung-Sun Kim
  • Patent number: 10162671
    Abstract: A method and an apparatus for performing task scheduling in a terminal are provided. The terminal includes at least two different types of cores and determines if a change in a task state has occurred in response to at least one of the two cores, If a change in a task state has occurred, the terminal determines, for said at least one core, the variation in the duration of each of a plurality of tasks being executed, predicts the duration of each of the plurality of tasks on the basis of the change in the task state using the determined variation, and performs task scheduling for said at least one core in accordance with the predicted duration.
    Type: Grant
    Filed: April 11, 2013
    Date of Patent: December 25, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Rakie Kim, Myung-Sun Kim
  • Publication number: 20180217937
    Abstract: Disclosed are a method and a device for increasing the performance of processes through cache splitting in a computing device using a plurality of cores. According to the present invention, a cache splitting method for performing a cache splitting in a computing device comprises the steps of: identifying, among a plurality of processes being executed, a process generating a cache flooding; and controlling the process generating the cache flooding such that the process uses a cache of a limited size.
    Type: Application
    Filed: July 29, 2016
    Publication date: August 2, 2018
    Inventors: Jinkyu KOO, Hyeonsang ECOM, Myung Sun KIM, Hanul SUNG
  • Patent number: 9985036
    Abstract: In a semiconductor device, a first active region has a first ?-shape, and the second active region has a second ?-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: May 29, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Suk Shin, Myung-Sun Kim, Seong-Jin Nam, Pan-Kwi Park, Hoi-Sung Chung, Nae-In Lee
  • Publication number: 20180088954
    Abstract: An electronic apparatus is provided for obtaining compiling data used in an external processor including a function unit including a plurality of input ports. The electronic apparatus includes a storage configured to store a plurality of instructions, and a processor configured to schedule each of the plurality of instructions in a plurality of cycles, assign a plurality of input data corresponding to the plurality of instructions to the plurality of input ports in a corresponding cycle, and if an unassigned input port among the plurality of input ports is present in a first cycle, assign a part of input data corresponding to an instruction scheduled in a second cycle after the first cycle to the unassigned input port in the first cycle, and obtain the compiling data by assigning remaining data of the input data corresponding the instruction to one of the plurality of input ports in the second cycle.
    Type: Application
    Filed: July 20, 2017
    Publication date: March 29, 2018
    Inventors: Yeon-bok LEE, Myung-sun KIM, Shin-gyu KIM
  • Publication number: 20180081692
    Abstract: An electronic apparatus generating compiled data used in a very long instruction word (VLIW) processor including a plurality of function units is provided. The electronic apparatus includes a storage and a processor configured to control the storage to store the compiled data in which a plurality of VLIW instructions are compiled, identify a VLIW instruction from the compiled data; and update, if a multi-cycle no operation (nop) instruction for the plurality of function units is identified within a cycle corresponding to a latency of the identified VLIW instruction and if an end cycle of another VLIW instruction is within the cycle corresponding to the latency of the identified VLIW instruction, the compiled data by including information on a cycle difference between an end cycle of the identified VLIW instruction and the end cycle of the another VLIW instruction in the multi-cycle nop instruction.
    Type: Application
    Filed: July 19, 2017
    Publication date: March 22, 2018
    Inventors: Jong-hun LEE, Jae-un PARK, Si-hoon SONG, Myung-sun KIM
  • Publication number: 20170033114
    Abstract: In a semiconductor device, a first active region has a first ?-shape, and the second active region has a second ?-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
    Type: Application
    Filed: October 12, 2016
    Publication date: February 2, 2017
    Inventors: Dong-Suk Shin, Myung-Sun Kim, Seong-Jin Nam, Pan-Kwi Park, Hoi-Sung Chung, Nae-In Lee
  • Publication number: 20170004324
    Abstract: A method for managing data by an electronic device is provided. The method includes receiving first data inputted from a user, generating second data by encrypting the first data using a public key, generating a query comprising the second data, transmitting the query to a server, receiving third data corresponding to the query from the server, generating fourth data by decrypting the third data using a secret key corresponding to the public key, and outputting the fourth data.
    Type: Application
    Filed: January 29, 2016
    Publication date: January 5, 2017
    Inventors: Jae-Woo SEO, Jung-Hee CHEON, Mi-Ran KIM, Myung-Sun KIM
  • Patent number: 9518974
    Abstract: A sensor system detects organophosphorus pesticide residue by inducing the aggregation of gold nanoparticles. A method comprises aggregating gold nanoparticles by a reaction between an organophosphorus pesticide and imidazole or a green fluorescent protein (GFP), and detecting the organophosphorus pesticide based on a absorption spectral change resulting from the aggregation. The system for detecting pesticide residue is useful as a biosensor for analyzing pesticide residue in situ, because the optical change of the reagent by the presence of an organophosphorus pesticide is distinct, the detection speed is fast, and the range of detection limits is broad.
    Type: Grant
    Filed: May 8, 2015
    Date of Patent: December 13, 2016
    Assignee: CHUNG ANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION
    Inventors: Tae Jung Park, Myung-Sun Kim, Gi Wook Kim, Min Su Han
  • Patent number: 9502563
    Abstract: In a semiconductor device, a first active region has a first ?-shape, and the second active region has a second ?-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: November 22, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Suk Shin, Myung-Sun Kim, Seong-Jin Nam, Pan-Kwi Park, Hoi-Sung Chung, Nae-In Lee
  • Patent number: 9405697
    Abstract: A method for managing memory using a virtual memory manager includes receiving a memory allocation request, allocating memory of a physical address space in response to the memory allocation request, mapping an address value of the memory allocated in the physical address space to consecutive primary virtual address space, and mapping the address value of the primary virtual address space to one of a first and second secondary virtual address spaces to process a new memory allocation request in a situation where memory a fragmentation occurs. Other embodiments are also disclosed. The methods and apparatuses of the present disclosure are capable of moving active memory blocks of the fragmented virtual memory space to another virtual memory space to resolve the memory fragmentation even when a memory fragmentation occurs.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: August 2, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jin Kyu Koo, Sang-Bok Han, Myung Sun Kim, In Choon Yeo
  • Publication number: 20160197188
    Abstract: In a semiconductor device, a first active region has a first ?-shape, and the second active region has a second ?-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
    Type: Application
    Filed: March 16, 2016
    Publication date: July 7, 2016
    Inventors: Dong-Suk Shin, Myung-Sun Kim, Seong-Jin Nam, Pan-Kwi Park, Hoi-Sung Chung, Nae-In Lee
  • Patent number: 9324834
    Abstract: In a semiconductor device, a first active region has a first ?-shape, and the second active region has a second ?-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: April 26, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Suk Shin, Myung-Sun Kim, Seong-Jin Nam, Pan-Kwi Park, Hoi-Sung Chung, Nae-In Lee
  • Patent number: 9263495
    Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: February 16, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sungkwan Kim, Soo-Kyung Kim, Jung-kuk Park, Myung-Sun Kim, Jaesung Yun, Junetaeg Lee, Hakyu Choi
  • Publication number: 20150355154
    Abstract: A sensor system detects organophosphorus pesticide residue by inducing the aggregation of gold nanoparticles. A method comprises aggregating gold nanoparticles by a reaction between an organophosphorus pesticide and imidazole or a green fluorescent protein (GFP), and detecting the organophosphorus pesticide based on a absorption spectral change resulting from the aggregation. The system for detecting pesticide residue is useful as a biosensor for analyzing pesticide residue in situ, because the optical change of the reagent by the presence of an organophosphorus pesticide is distinct, the detection speed is fast, and the range of detection limits is broad.
    Type: Application
    Filed: May 8, 2015
    Publication date: December 10, 2015
    Inventors: Tae Jung PARK, Myung-Sun KIM, Gi Wook KIM, Min Su HAN
  • Patent number: 9142455
    Abstract: A method of fabricating a semiconductor device is provided. An etch-target layer is formed on a substrate. A photoresist layer is formed on the etch-target layer. A first exposure process is performed using a first photo mask to form a plurality of first-irradiated patterns in the photoresist layer. The first photo mask includes a plurality of first transmission regions. Each first transmission region has different optical transmittance. A second exposure process is performed using a second photo mask to form a plurality of second-irradiated patterns in the photoresist layer. The second photo mask includes a plurality of second transmission regions. Each second transmission region has different optical transmittance. A photoresist pattern is formed from the photoresist layer by removing the plurality of first-irradiated and second-irradiated patterns from the photoresist layer. A lower structure is formed from the etch-target layer by etching the etch-target layer using the photoresist pattern.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: September 22, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoungmi Kim, Myung-Sun Kim, Jaeho Kim, Hyounghee Kim, Namuk Choi, Jungsik Choi