Abstract: A home domain building method and system that allow devices to join a home domain using smart cards. In the method, a master device reads device information from a smart card having a device ID and a device key as the device information of a guest device authenticated as a legal device and transmits a challenge request signal to the guest device, the guest device randomly generates a challenge value in response to the challenge request signal, the master device encrypts the challenge value using the device key of the guest device and transmits the encrypted challenge value to the guest device, the guest device decrypts the encrypted challenge value, and if the decrypted challenge value is the same as the challenge value generated in response to the challenge request signal, the guest device allows the master device to join the guest device in the home domain.

Abstract: A semiconductor device includes a gate insulator and a gate electrode stacked on a substrate, a source/drain pattern which fills a recess region formed at opposite sides adjacent to the gate electrode, the source/drain pattern being made of silicon-germanium doped with dopants and a metal germanosilicide layer disposed on the source/drain pattern. The metal germanosilicide layer is electrically connected to the source/drain pattern. Moreover, a proportion of germanium amount to the sum of the germanium amount and silicon amount in the metal germanosilicide layer is lower than that of germanium amount to the sum of the germanium amount and silicon amount in the source/drain pattern.

Abstract: Provided is a method of controlling content access in a home network. The method includes: (a) defining a predetermined sub group and allocating a sub group key for the sub group; and (b) checking whether a user belongs to the sub group and transmitting the sub group key to a user device requested by the user, wherein the user device obtains an encrypted content key using a domain key and the sub group key. Since a content key is twice encrypted using a domain key and a sub group key and transmitted to a user device, it is possible to provide authorized content access to a user.

Abstract: A reproduction method capable of immediately revoking a leaked device key by dividing the device key into a first partial key and a second partial key is provided. The reproduction method includes the operations of receiving encrypted content to be reproduced, requesting a token for decrypting the received content from an external device containing a first partial key of a device via a network, receiving the requested token from the external device, and decrypting the received token by using a second partial key contained in the device, thereby preventing content encrypted and distributed before revocation of an illegally copied device from being reproduced, and minimizing damage due to key leakage.

Abstract: A method of packaging broadcast contents are provided. The method includes: extracting a copy control bit from input broadcast contents and determining whether the broadcast contents will be stored after being encrypted based on the extracted copy control bit; creating usage rule information which includes an encryption method of the broadcast contents if it is determined that the broadcast contents will be stored after being encrypted; extracting the copy control bit from each new broadcast content sequentially input and detecting broadcast contents which include copy control bits indicating that the broadcast contents will be stored without being encrypted; and encrypting the input broadcast contents through the broadcast contents before the detected broadcast contents using the encryption method and packaging and storing the encrypted broadcast contents and the usage rule information.

Abstract: Methods of fabricating semiconductor integrated circuit devices are provided. A substrate is provided with gate patterns formed on first and second regions. Spaces between gate patterns on the first region are narrower than spaces between gate patterns on the second region. Source/drain trenches are formed in the substrate on opposite sides of the gate patterns on the first and second regions. A first silicon-germanium (SiGe) epitaxial layer is formed that partially fills the source/drain trenches using a first silicon source gas. A second SiGe epitaxial layer is formed directly on the first SiGe epitaxial layer to further fill the source/drain trenches using a second silicon source gas that is different from the first silicon source gas.

Abstract: A method of fabricating a microlens includes forming layer of photoresist on a substrate, patterning the layer of photoresist, and then reflowing the photoresist pattern. The layer of photoresist is formed by coating the substrate with liquid photoresist whose viscosity is 150 to 250 cp. A depth sensor includes a substrate and photoelectric conversion elements at an upper portion of the substrate, a metal wiring section disposed on the substrate, an array of the microlenses for focusing incident light as beams onto the photoelectric conversion elements and which beams avoid the wirings of the metal wiring section. The depths sensor also includes a layer presenting a flat upper surface on which the microlenses are formed. The layer may be a dedicated planarization layer or an IR filter, interposed between the microlenses and the metal wiring section.

Abstract: In a method of manufacturing a transistor, a gate structure is formed on a substrate including silicon. An upper portion of the substrate adjacent to the gate structure is etched to form a first recess in the substrate. A preliminary first epitaxial layer including silicon-germanium is formed in the first recess. An upper portion of the preliminary first epitaxial layer is etched to form a second recess on the preliminary first epitaxial layer. In addition, a portion of the preliminary first epitaxial layer adjacent to the second recess is etched to thereby transform the preliminary first epitaxial layer into a first epitaxial layer. A second epitaxial layer including silicon-germanium is formed in the second recess located on the first epitaxial layer.

Abstract: A compound synthesis method includes bonding a first compound to a substrate to form a first film. A second film is formed on the first film using an acid-transfer composition including (A) a polymer that includes a structural unit shown by a following formula (1) and a structural unit shown by a following formula (2), (B) a photoacid generator shown by a following formula (3), and (C) a sensitizer shown by a following formula (4). The second film is exposed to remove the protecting group from the first compound under an exposed are of the second film. An acid generated in the exposed area of the second film is transferred to the first film. The second film after being exposed is removed. A second compound is bonded to the first compound from which the protecting group has been removed.

Abstract: A method for transmitting content to a user device from a home server in a home network is provided. The method includes: receiving an allocated user public key and a user private key of a user to whom the home server belongs; generating an arbitrary session public key and a session private key, generating an encrypted session private key by encrypting the session private key using a device public key that is a public key of the user device, and transmitting the encrypted session private key to the user device; and transmitting the content encrypted using a predetermined content key and a content key encrypted using the session private key to the user device. According to the method, by binding the content to each user, instead of to each device, the content can be safely and conveniently shared.

Abstract: Methods of fabricating semiconductor integrated circuit devices are provided. A substrate is provided with gate patterns formed on first and second regions. Spaces between gate patterns on the first region are narrower than spaces between gate patterns on the second region. Source/drain trenches are formed in the substrate on opposite sides of the gate patterns on the first and second regions. A first silicon-germanium (SiGe) epitaxial layer is formed that partially fills the source/drain trenches using a first silicon source gas. A second SiGe epitaxial layer is formed directly on the first SiGe epitaxial layer to further fill the source/drain trenches using a second silicon source gas that is different from the first silicon source gas.

Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode on a semiconductor substrate and a sidewall spacer on the gate electrode. Then, a portion of the semiconductor substrate at both sides of the sidewall spacer is partially etched to form a trench. A SiGe mixed crystal layer is formed in the trench. A silicon layer is formed on the SiGe mixed crystal layer. A portion of the silicon layer is partially etched using an etching solution having different etching rates in accordance with a crystal direction of a face of the silicon layer to form a capping layer including a silicon facet having an (111) inclined face.

Abstract: A method of managing a home network key in a home network environment, which has a key management server for managing the home network key and a plurality of home network devices, includes: allowing a home network device to generate device unique information and to transmit the device unique information to the key management server; allowing the key management server to generate a parameter for generating the home network key by using the device unique information and to transmit the parameter to the home network device; and allowing the home network device to generate the home network key by using the parameter. The generated home network key being independent of the device unique information.

Abstract: A method and apparatus for managing digital content, which can detect the leakage of an encryption key when the encryption key used for encrypting the digital content is leaked or cracked. When the encrypted digital content is decrypted by an illegal device, a module linked with the encrypted digital content is automatically driven and a digital content managing apparatus is then notified that the encrypted digital content has been decrypted by the illegal device such that the digital content managing apparatus can change the encryption key. Thus, it is possible to prevent the digital content from being continuously leaked due to the use of the same encryption key for encrypting subsequent digital content.

Abstract: A method of backing up domain information relating to the construction of a domain is provided. In the method, the domain information is encrypted and the encrypted domain information is stored in a predetermined storage device in the domain the encrypted domain information to the predetermined storage device, thereby securely backing up the domain information without the help of an external network. Accordingly, even when the existing domain server malfunctions, a new domain server is capable of obtaining the domain information.

Abstract: A method of measuring round trip time (RTT) includes: chain-hashing at least one random number to create a plurality of hash values; (b) transmitting one of the created hash values to a device and starting to measure RTT of the device; and (c) receiving from the device a response to the transmitted hash value and ending the RTT measurement, thereby performing a more effective proximity check than a conventional proximity check requiring encryptions and decryptions of several tens of times through several thousands of times.

Abstract: A method of evaluating an epitaxial growing process includes forming a mold layer on each of a plurality of substrates, forming a photoresist pattern on each mold layer, the photoresist pattern having opening portions, a total area of a bottom portion of the opening portions being different for each substrate, patterning each mold layer to expose a surface portion of the substrate to form an evaluation pattern on each substrate, evaluation patterns including opening portions corresponding to the opening portion in the photoresist pattern, determining substrate opening ratios for each substrate based on the opening portions in the evaluation pattern thereon, the substrate opening ratios being different for each substrate, performing a selective epitaxial process on each substrate to form an epitaxial layer, and evaluating characteristics of the epitaxial layer for each substrate to determine an optimal substrate opening ratio.

Abstract: There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

Abstract: In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

Abstract: A method of fabricating a microarray is provided, which includes providing a substrate having a surface that is protected by an acid labile protective group that includes an acetal group represented by formula (1) and has a functional group that can be coupled with a monomer of a probe; applying a photoresist including a photo acid generator to the substrate; selectively exposing the photoresist to deprotect the acid labile protective group that corresponds to an exposed region; removing the photoresist; and coupling the monomer that is combined with the acid labile protective group with the deprotected functional group. Formula (1) has the following structure: wherein, R1 denotes an alkyl group having 1 to 5 carbon atoms, R2 denotes hydrogen or a methyl group, and Y denotes a monomer or a site coupled with the substrate.