Abstract: A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor substrate, forming an interlayer insulating layer on the semiconductor substrate, forming a contact hole in the interlayer insulating layer, forming a plug recessed inside of the contact hole, forming an ohmic contact layer on the plug, depositing a La layer or a LaN layer on the ohmic contact layer, performing a nitridation process by a plasma treatment process to form a LaN diffusion barrier layer on the ohmic contact layer and sequentially forming a bottom electrode, a BLT ((BixLay)Ti3O12) dielectric layer and a top electrode on the entire structure.

Abstract: A semiconductor fabrication technique for forming a ferroelectric capacitor, in which the thermal burden is reduced by using an SBT-based ferroelectric thin film such as SrxBiyTa2O9 (‘SBT’) or SrxBiy(TaiNbj)2O9 (‘SBT(N)’) as the dielectric medium. The method includes the following steps. A strontium-bismuth-tantalum oxide film is formed on a semiconductor substrate, with a conductive film for a lower electrode having been formed on the semiconductor substrate (first step). An NH3 gas is flowed at a stabilizing step of a rapid thermal annealing so as to reduce organic materials bonded with metal elements of the strontium-bismuth-tantalum oxide film (second step). An oxide gas is flowed at a temperature of 450˜650° C. at an annealing step of the rapid thermal annealing so as to induce a perovskite nuclear formation in the strontium-bismuth-tantalum oxide film (third step).

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: There is provided a method for fabricating a capacitor of semiconductor memory device, which can prevent Ti from diffusing into the ferroelectric layer of capacitor from the Ti adhesive layer, which is formed at the time of metal wiring to decrease the contact resistance between the upper electrode of capacitor and the metal wire. In order to prevent diffusion of Ti into the inside of the capacitor, a dense oxide layer is formed on the ferroelectric layer such as SBTN.

Abstract: A method for fabricating a ferroelectric capacitor of nonvolatile semiconductor memory device includes the steps of forming an amorphous layer on a resulting structure after performing a specific process, forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere and performing a thermal process for growing the grains to form a ferroelectric thin film. The perovskite nuclei are formed at a low temperature, so that the ferroelectric capacitor has improved properties such as high density, high polarization and low leakage current.