Patents by Inventor Naoki Takeguchi

Naoki Takeguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7902056
    Abstract: Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.
    Type: Grant
    Filed: August 20, 2008
    Date of Patent: March 8, 2011
    Assignee: Spansion LLC
    Inventors: Takayuki Enda, Tatsuya Inoue, Naoki Takeguchi
  • Publication number: 20100122908
    Abstract: An electroplating system is provided. The electroplating system includes a divided electrode that is arranged to simultaneously provide a plurality of line currents for an electroplating process. The system includes a current control component that is coupled to the divided electrode. The current control component is configured to determine the magnitude of each of the line currents. The current control component is also configured to regulate individual line currents based, at least in part, on the determined magnitude of each of the line currents.
    Type: Application
    Filed: November 18, 2008
    Publication date: May 20, 2010
    Applicant: Spansion LLC
    Inventor: Naoki Takeguchi
  • Publication number: 20090174041
    Abstract: Structures and methods for blocking ultraviolet rays during a film depositing process for semiconductor device are disclosed. In one embodiment, a semiconductor device includes an oxide-nitride-oxide (ONO) film formed on a semiconductor substrate, a gate electrode formed on the ONO film, a lower layer insulation film formed on the ONO film and the gate electrode, and a ultraviolet (UV) blocking layer based on a plurality of granular particles scattered in at least one insulation film formed on lower layer insulation film, where the UV blocking layer suppresses UV rays generated during an additional film deposition from reaching the ONO film.
    Type: Application
    Filed: June 5, 2008
    Publication date: July 9, 2009
    Inventor: Naoki TAKEGUCHI
  • Publication number: 20090053867
    Abstract: Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.
    Type: Application
    Filed: August 20, 2008
    Publication date: February 26, 2009
    Inventors: Takayuki ENDA, Tatsuya INOUE, Naoki TAKEGUCHI
  • Publication number: 20090026570
    Abstract: Methods and structures for discharging plasma formed during the fabrication of semiconductor device are disclosed. The semiconductor device includes a wordline, a common ground line and a fuse structure for electrically coupling the wordline and the common ground line until a break signal is applied via the fuse structure.
    Type: Application
    Filed: December 20, 2007
    Publication date: January 29, 2009
    Inventors: Masahiko Higashi, Naoki Takeguchi
  • Publication number: 20060281242
    Abstract: A semiconductor device of the present invention includes a semiconductor substrate (10) having a bit line (14), an ONO film (16) that is provided on the semiconductor substrate (10) and has an opening (46), an interlayer insulating film (30) that is provided on the ONO film (16) and has a contact hole (40) connected to the bit line (14) and provided in the opening (46), and an insulation layer (44) provided between and separating the ONO film (16) and the contact hole (40). In forming the contact hole (40) in the interlayer insulating film (30), the ONO film (16) being provided separately from the contact hole (40) prevents the damage region from being created in the ONO film (16). This makes it possible to suppress charge loss from the trapping layer due to the damage region and provide a highly reliable semiconductor device.
    Type: Application
    Filed: February 28, 2006
    Publication date: December 14, 2006
    Inventors: Naoki Takeguchi, Yuji Mizuguchi, Masatomi Okanishi, Tsukasa Takamatsu
  • Patent number: 6822831
    Abstract: An object of the present invention is to provide a recording head having a magnetic pole simultaneously possessing a high saturation magnetic flux density, a high permeability and a high electric resistivity, and the magnetic pole of the recording head is a polycrystalline film comprising Fe whose content is not less than 57.5 atomic % and not more than 94.5 atomic %; one or more kinds of elements selected from the element group of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Rh, whose whole content is not less than 1 atomic % and not more than 15 atomic %; N whose content is not less than 0.5 atomic % and not more than 10 atomic %; and O whose content is not less than 1.5 atomic % and not more than 22.5 atomic %.
    Type: Grant
    Filed: February 12, 2002
    Date of Patent: November 23, 2004
    Assignee: Fujitsu Limited
    Inventors: Shoji Ikeda, Yuji Uehara, Ikuya Tagawa, Naoki Takeguchi, Masahiro Kakehi
  • Publication number: 20020129875
    Abstract: An object of the present invention is to provide a recording head having a magnetic pole simultaneously possessing a high saturation magnetic flux density, a high permeability and a high electric resistivity, and the magnetic pole of the recording head is a polycrystalline film comprising Fe whose content is not less than 57.5 atomic % and not more than 94.5 atomic %; one or more kinds of elements selected from the element group of Al, B, Ga, Si, Ge, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Rh, whose whole content is not less than 1 atomic % and not more than 15 atomic %; N whose content is not less than 0.5 atomic % and not more than 10 atomic %; and O whose content is not less than 1.5 atomic % and not more than 22.5 atomic %.
    Type: Application
    Filed: February 12, 2002
    Publication date: September 19, 2002
    Applicant: FUJITSU LIMITED
    Inventors: Shoji Ikeda, Yuji Uehara, Ikuya Tagawa, Naoki Takeguchi, Masahiro Kakehi