Abstract: A damper device includes a hollow case main body provided with an opening, a pressure sensitive film attached to the case main body so as to cover the opening, demarcates a liquid storage chamber together with the case main body, and is flexibly deformable internally toward, or externally away from, the liquid storage chamber, an inlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow into the liquid storage chamber, an injection outlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow out toward the liquid injector, an elastic member coupled with the pressure sensitive film to flexibly deform the pressure sensitive film externally away from the liquid storage chamber, and a pressure receiving plate that is located between the pressure sensitive film and the elastic member and includes a discontinuously joined portion that is discontinuously joined with the pressure sensitive film.

Abstract: A semiconductor device (1001) includes: a first transistor (10A) having a first channel length L1 and a first channel width W1; and a second transistor (10B) having a second channel length L2 and a second channel width W2, wherein the first transistor (10A) and the second transistor (10B) include an active layer formed from a common oxide semiconductor film, the first transistor (10A) is a memory transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Isd depends on a gate voltage Vg to a resistor state where the drain current Isd does not depend on the gate voltage Vg, and the first channel length L1 is smaller than the second channel length L2.

Abstract: An apparatus for controlling a vehicle, which includes: a battery (3) capable of being charged from an external power source (EPS); a power generation unit (PGU) capable of charging the battery (3); an electric heater (12) configured to produce heat with electric power from an electric power source; a heater core (11) configured to heat air by using any one of waste heat from the power generation unit (PGU) and the electric heater (12); and a controller (19) configured to perform control for selectively using the waste heat from the power generation unit (PGU) and the electric heater (12) as a heat source of the heater core (11) when the vehicle is parked.

Abstract: A liquid supply system includes a liquid supply source, an injection head, a damper in communication with the injection head, a liquid supply path including an end in communication with the liquid supply source and another end in communication with the damper, a liquid supply device supplying the liquid from the liquid supply source toward the damper, a pressure control valve provided between the liquid supply source and the liquid supply device, and a controller controlling the liquid supply device to be actuated or to be stopped. The pressure control valve closes the liquid supply path while the liquid supply device stopped.

Abstract: An active matrix substrate (100) includes a display region (R1) in which a plurality of pixels are provided and a frame region (R2) provided around the display region, the frame region including a plurality of peripheral circuit TFTs (5) which are constituents of a driving circuit, wherein each of the plurality of peripheral circuit TFTs includes a gate electrode (12), a source electrode (16), a drain electrode (18), and an oxide semiconductor layer (14), and in at least some of the plurality of peripheral circuit TFTs, a source connecting region (Rs) that is a connecting region between the oxide semiconductor layer and the source electrode and a drain connecting region (Rd) that is a connecting region between the oxide semiconductor layer and the drain electrode are asymmetrically provided.

Abstract: A semiconductor device includes: a first metal layer including a gate electrode; a first insulating layer provided on the first metal layer; an oxide semiconductor layer provided on the first insulating layer; a second insulating layer provided on the oxide semiconductor layer; a second metal layer provided on the oxide semiconductor layer and the second insulating layer, the second metal layer including a source electrode; a third insulating layer provided on the second metal layer; and a first transparent electrode layer provided on the third insulating layer. The oxide semiconductor layer includes a first portion lying above the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side. The third insulating layer does not include an organic insulating layer.

Abstract: A liquid supply system includes a liquid supply source, an injection head, a damper in communication with the injection head, a liquid supply path including an end in communication with the liquid supply source and another end in communication with the damper, a liquid supply device supplying the liquid from the liquid supply source toward the damper, a pressure control valve provided between the liquid supply source and the liquid supply device, and a controller controlling the liquid supply device to be actuated or to be stopped. The pressure control valve closes the liquid supply path while the liquid supply device stopped.

Abstract: An active matrix substrate includes a display region in which a plurality of pixels are provided and a frame region lying outside the display region. The frame region includes a plurality of peripheral circuit TFTs which are supported by a substrate and which are constituents of a driving circuit. Each of the plurality of peripheral circuit TFTs includes a gate electrode, an oxide semiconductor layer arranged so as to at least partially extend over the gate electrode but to be insulated from the gate electrode, and source and drain electrodes connected with the oxide semiconductor layer.

Abstract: A self-weight pressure control valve includes a hollow case main body with an opening, a partitioning wall dividing the case main body into first and second pressure chambers in communication with the opening, a communication opening in the partitioning wall and communicating the first pressure chamber and the second pressure chamber to each other, a valve rod including a rod portion inserted through the communication opening to pass the partitioning wall, and a valve portion located in the first pressure chamber, and a pressure sensitive film covering the opening of the case main body, coupled with a tip of the rod portion of the valve rod, and flexibly deformable toward the rod portion. When the pressure sensitive film is not flexibly deformed toward the rod portion, the communication opening is maintained in a closed state by the valve portion by use of a self-weight of the valve rod.

Abstract: A liquid supply system includes a liquid supply source, an injection head, a damper in communication with the injection head, a liquid supply path including an end in communication with the liquid supply source and another end in communication with the damper, a liquid supply device supplying the liquid from the liquid supply source toward the damper, a pressure control valve provided between the liquid supply source and the liquid supply device, and a controller controlling the liquid supply device to be actuated or to be stopped. The pressure control valve closes the liquid supply path while the liquid supply device stopped.

Abstract: A damper device includes a hollow case main body provided with an opening, a pressure sensitive film attached to the case main body so as to cover the opening, demarcates a liquid storage chamber together with the case main body, and is flexibly deformable internally toward, or externally away from, the liquid storage chamber, an inlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow into the liquid storage chamber, an injection outlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow out toward the liquid injector, an elastic member coupled with the pressure sensitive film to flexibly deform the pressure sensitive film externally away from the liquid storage chamber, and a pressure receiving plate that is located between the pressure sensitive film and the elastic member and includes a discontinuously joined portion that is discontinuously joined with the pressure sensitive film.

Abstract: A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg. The memory transistor (10A) includes a gate electrode (3), a metal oxide layer (7), a gate insulating film (5), and source and drain electrodes. The drain electrode (9d) has a multilayer structure which includes a first drain metal layer (9d1) and a second drain metal layer (9d2), the first drain metal layer (9d1) being made of a first metal whose melting point is not less than 1200° C., the second drain metal layer (9d2) being made of a second metal whose melting point is lower than that of the first metal. Part P of the drain electrode 9d extends over both the metal oxide layer (7) and the gate electrode (3) when viewed in a direction normal to a surface of the substrate.

Abstract: An inkjet head apparatus includes a carriage including base plates, a head plate supported by the base plates, recording heads each attached to an associated one of openings of the head plate, a pivot between the base plate and the head plate so that the head plate is rotatably supported by the base plate, and an adjusting screw to adjust the positions of the recording heads with respect to the base plates. At least a portion of the pivot and at least a portion of the adjusting screw are disposed rearward of the front ends of the openings and forward of the rear ends of the openings.

Abstract: A liquid supply system includes a liquid supply source, an injection head, a damper in communication with the injection head, a liquid supply path including an end in communication with the liquid supply source and another end in communication with the damper, a liquid supply device supplying the liquid from the liquid supply source toward the damper, a pressure control valve provided between the liquid supply source and the liquid supply device, and a controller controlling the liquid supply device to be actuated or to be stopped. The pressure control valve closes the liquid supply path while the liquid supply device stopped.

Abstract: A self-weight pressure control valve includes a hollow case main body with an opening, a partitioning wall dividing the case main body into first and second pressure chambers in communication with the opening, a communication opening in the partitioning wall and communicating the first pressure chamber and the second pressure chamber to each other, a valve rod including a rod portion inserted through the communication opening to pass the partitioning wall, and a valve portion located in the first pressure chamber, and a pressure sensitive film covering the opening of the case main body, coupled with a tip of the rod portion of the valve rod, and flexibly deformable toward the rod portion. When the pressure sensitive film is not flexibly deformed toward the rod portion, the communication opening is maintained in a closed state by the valve portion by use of a self-weight of the valve rod.

Abstract: A damper device includes a hollow case main body provided with an opening, a pressure sensitive film attached to the case main body so as to cover the opening, demarcates a liquid storage chamber together with the case main body, and is flexibly deformable internally toward, or externally away from, the liquid storage chamber, an inlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow into the liquid storage chamber, an injection outlet that is in the case main body, is in communication with the liquid storage chamber, and allows the liquid to flow out toward the liquid injector, an elastic member coupled with the pressure sensitive film to flexibly deform the pressure sensitive film externally away from the liquid storage chamber, and a pressure receiving plate that is located between the pressure sensitive film and the elastic member and includes a discontinuously joined portion that is discontinuously joined with the pressure sensitive film.

Abstract: A semiconductor device (100A) includes a first metal layer (12) including a gate electrode (12g); a gate insulating layer (14) formed on the first metal layer; an oxide semiconductor layer (16) formed on the gate insulating layer; a second metal layer (18) formed on the oxide semiconductor layer; an interlayer insulating layer (22) formed on the second metal layer; and a transparent electrode layer (TE) including a transparent conductive layer (Tc). The oxide semiconductor layer includes a first portion (16a) and a second portion (16b) extending while crossing an edge of the gate electrode. The second metal layer includes a source electrode (18s) and a drain electrode (18d). The interlayer insulating layer does not include an organic insulating layer. The interlayer insulating layer includes a contact hole (22a) formed so as to overlap the second portion and an end of the drain electrode that is closer to the second portion.

Abstract: A circuit board has a through hole extending from a front surface to a rear surface. A press-fit terminal is press-fitted from the front surface into the through hole and is connected to a land, which is formed on a wall surface of the through hole. A support member supports the rear surface of the circuit board when the press-fit terminal is press-fitted into the through hole. A housing has a bottom portion and an opening, which is on the opposite side of the bottom portion. The circuit board is affixed to the housing to cover both the opening and the support member. The support member is held and interposed between the rear surface and an inner surface of the bottom portion.

Abstract: A semiconductor device (1001) includes: a memory cell; and a writing control circuit (107), wherein the memory cell includes a memory transistor (10A) which has an active layer (7A), the active layer (7A) including a metal oxide, the memory transistor (10A) is a transistor which is capable of being irreversibly changed from a semiconductor state where a drain current Ids depends on a gate-source voltage Vgs to a resistor state where the drain current Ids does not depend on the gate-source voltage Vgs, and the writing control circuit (107) is configured to control voltages applied to a drain electrode, a source electrode and a gate electrode such that Vgs?Vds+Vth is satisfied where Vth is a threshold voltage of the memory transistor (10A) and Vds is a drain-source voltage of the memory transistor (10A), whereby writing in the memory transistor (10A) is performed.

Abstract: An active matrix substrate (100) includes a display region (R1) in which a plurality of pixels are provided and a frame region (R2) provided around the display region, the frame region including a plurality of peripheral circuit TFTs (5) which are constituents of a driving circuit, wherein each of the plurality of peripheral circuit TFTs includes a gate electrode (12), a source electrode (16), a drain electrode (18), and an oxide semiconductor layer (14), and in at least some of the plurality of peripheral circuit TFTs, a source connecting region (Rs) that is a connecting region between the oxide semiconductor layer and the source electrode and a drain connecting region (Rd) that is a connecting region between the oxide semiconductor layer and the drain electrode are asymmetrically provided.