Abstract: In an exposure method of imaging/projecting, through a projection optical system, a pattern formed on a mask onto an object to be exposed, a mask is placed on an object plane side of the projection optical system, the pattern formed on the mask being constituted by a transparent portion which is almost transparent to exposure light, and a phase shift portion for producing light whose phase is shifted from that of light transmitted through the transparent portion by almost an odd number multiple of .pi., and the object is exposed while a limiting member for limiting a beam, of beams passing through a Fourier transform plane having an optical Fourier transform relationship with a pattern surface of the mask in the projection optical system, which propagates near an optical axis of the projection optical system is placed at or near the Fourier transform plane.

Abstract: A diffraction grating is set between a light source and a fly-eye lens composed of a plurality of lens elements rectangular in cross section, and using the zeroth order diffraction beam and .+-.first order diffraction beams emergent from the diffraction grating, a plurality of light source images are formed along the longitudinal direction on the exit plane of each lens element in the fly-eye lens.

Abstract: A depth-measurement is disclosed for highly accurately measuring the depth (step difference) of depressions in a pattern in which depressions and protrusions periodically repeat, as in, e.g. a fine groove pattern. The depth measurement method is also for optically measuring the depth of depressions in a pattern formed so that depressions and protrusions periodically repeat in a specified direction on a substrate. The depth of the depressions is calculated based on photoelectrically converted signals of an integrated light flux of a first and second light beam obtained when an interference pattern is formed on the pattern by shining a first and second coherent light beam onto the pattern, and on the wavelengths of the first and second light beams.

Abstract: A mark for position detection formed on a substrate has a first pattern disposed near the center of the mark and having periodicity in a Y-axis direction, and second patterns respectively disposed near both sides of the first pattern in an X-axis direction and each having periodicity in the X-axis direction. The position of the first pattern is detected by aligning the detection center of a detecting optical system, that is, the minimal aberration point of the detecting optical system, with the center of the first pattern. The positions of the second patterns are detected at respective points symmetric with respect to the minimal aberration point, and the detected values for the positions of the second patterns are averaged. An apparatus for detecting the mark for position detection detects the first and second patterns by image processing when the mark is in a stationary state.

Abstract: Illuminating light at a pupil plane of an illumination optical system for illuminating a position detection mark on a substrate is limited to an annular area centered at an optical axis, and a member substantially blocks an image-forming light beam distributed over an area on a pupil plane of an image-forming optical system for forming an image of the position detection mark on an imaging device by receiving light generated from the mark, the area being in image-forming relation to the annular area on the pupil plane of the illumination optical system. Alternatively, a member gives a phase difference of approximately .pi./2 ?rad! between the image-forming light beam distributed over the area which is in image-forming relation to the annular area on the pupil plane of the illumination optical system and the image-forming light beam distributed over the area other than that area. The outer radius r.sub.o and inner radius r.sub.

Abstract: An exposure substrate includes a position detection mark having a recessed or projecting portion formed on the substrate with a difference h in depth. The difference h in depth of the recessed or projecting portion is set to(2m+1).lambda./4-0.05.lambda..ltoreq.h.ltoreq.(2m+1).lambda./4+0.05.lambda.where .lambda. is the wavelength or center wavelength in a photoresist, of a monochromatic or quasimonochromatic detection beam to be irradiated on the position detection mark, and m is an integer not less than 0.

Abstract: A diffraction grating is set between a light source and a fly-eye lens composed of a plurality of lens elements rectangular in cross section, and using the zeroth order diffraction beam and .+-.first order diffraction beams emergent from the diffraction grating, a plurality of light source images are formed along the longitudinal direction on the exit plane of each lens element in the fly-eye lens.

Abstract: A diffraction grating is set between a light source and a fly-eye lens composed of a plurality of lens elements rectangular in cross section, and using the zeroth order diffraction beam and .+-.first order diffraction beams emergent from the diffraction grating, a plurality of light source images are formed along the longitudinal direction on the exit plane of each lens element in the fly-eye lens.

Abstract: A projection exposure apparatus includes a projection optical system which projects an image of a pattern formed on a mask on a substrate. The projection optical system has a first optical system for forming an intermediate image of the pattern, a first mirror disposed near the intermediate image for deflecting a light beam from the first optical system, and a second optical system for condensing the light beam from the first mirror and forming the image of the pattern on the substrate. The first optical system and the second optical system are subject to an aberration correction with respect to a first wavelength for exposure. A second mirror is disposed near the first mirror and corrects at least a portion of a chromatic aberration generated in the first optical system and the second optical system with respect to a second wavelength different from the first wavelength.

Abstract: Methods and apparatus are disclosed for performing detection of the position of a substrate, such as used in photolithography, with high precision by zero Nth-order detection. Alignment marks (grating marks) on the substrate are illuminated by coherent light beams comprising multiple wavelength components. Reflected light forms diffraction patterns that are detected by appropriate detectors. At least one level-difference detection circuit and at least one detected-position-correction circuit are provided, the former detecting grating-mark positions grating mark positions .DELTA.Xn' at respective wavelengths from light-quantity signals produced from the detectors, and the latter calculating relative level differences .delta..sub.n for the respective wavelengths at each grating mark, based on changes in the light-quantity signals accompanying relative scanning and based on design data for the grating marks.

Abstract: An exposure apparatus for reproducing a mask pattern onto a photo-sensitive surface of a substrate uses holographic techniques. The apparatus includes support for holding a hologram recording plate at a predetermined position during both a recording operation and a reconstructing operation. A first illuminating optical system introduces a light beam from a coherent light source to a mask and irradiates a subject beam produced from the mask into the recording plate. A second illuminating optical system irradiates the light beam from a coherent light source as a reference beam into the recording plate, a carrier apparatus disposes during the reconstructing operation, a substrate at the position of the mask, in place of the mask. A third illuminating optical system for irradiates a conjugate beam with the reference beam into the recording plate, in which a hologram has been formed by the recording operation, to form an image of the hologram on the photo-sensitive surface of the substrate.

Abstract: A projection exposure apparatus including an irradiation optical system including a light source and irradiating a mask with irradiation light beams, a projection optical system for projecting an image of a pattern of the mask on a substrate, a plurality of first fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed surface with respect to the pattern of the mask in the irradiation optical system or on a plane adjacent to the same and having a center located at a plurality of positions which are eccentric from the optical axis of the irradiation optical system, a plurality of second fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed plane with respect to the incidental end of each of a plurality of the first fly-eye type optical integrators or on a plane adjacent to the same and being disposed to correspond to a plurality of the first fly-eye type optical integrators, and a light divider for dividing

Abstract: In an exposure method of illuminating a pattern formed on a mask with illumination light from an illumination optical system, and projecting/exposing an image of the pattern on a photosensitive substrate through a projection optical system, the pattern includes a transmission portion having a transmittance of about 1 with respect to the illumination light and a phase shift transmission portion which provides a phase difference of about (2n+1).pi.(n is an integer) with respect to the light transmitted through the transmission portion, and has a pattern width not more than a resolving limit of the projection optical system.

Abstract: Illuminating light at a pupil plane of an illumination optical system for illuminating a position detection mark on a substrate is limited to an annular area centered at an optical axis, and a member substantially blocks an image-forming light beam distributed over an area on a pupil plane of an image-forming optical system for forming an image of the position detection mark on an imaging device by receiving light generated from the mark, the area being in image-forming relation to the annular area on the pupil plane of the illumination optical system. Alternatively, a member gives a phase difference of approximately .pi./2 ?rad! between the image-forming light beam distributed over the area which is in image-forming relation to the annular area on the pupil plane of the illumination optical system and the image-forming light beam distributed over the area other than that area.

Abstract: A projection-exposing apparatus has a mask which has a pattern formed with a pitch P.sub.R, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch P.sub.G disposed between the light source and the pattern of the mask for generating diffracted light. The pitch P.sub.G of the deflecting grating member is defined in the relation P.sub.G =2P.sub.R. The diffraction grating member is remote from the pattern on the mask by a distance .DELTA.t, where .DELTA.t .gtoreq.P.sub.G /2NA.sub.IL, NA.sub.IL being the numerical aperture of the illumination optical system.

Abstract: A projection exposure apparatus having an illuminating system for irradiating a mask, which has a pattern, with illuminating light for exposure, and a projection optical system for projecting an image of the mask pattern onto a photosensitive substrate with predetermined image-forming characteristics under the illuminating light. The apparatus is provided with an optical filter changing member for selecting one of a plurality of optical filters that change at least one of optical characteristics of light from the mask by respective amounts which are different from each other. The optical characteristics include an amplitude distribution, a phase distribution and a condition of polarization. The optical filter changing member further disposes the selected optical filter on a pupil plane in the projection optical system or on a plane in the neighborhood of the pupil plane.

Abstract: A method and apparatus for transferring a fine pattern (12) on a mask (11) onto a substrate (17) by a projection exposure apparatus including an illumination optical system (1-10) for irradiating an illuminating light on the mask (11), and a projection optical system (13) for projecting an image of the fine pattern (12) on the illuminated mask onto the substrate (17). The illuminating light is irradiated at least in the form of a pair of light beams opposedly inclined with respect to the mask through a pair of transparent windows (6a, 6b) of a spatial filter (6) whereby either one of the .+-.

Abstract: A projection exposure method wherein a mask (R) is illuminated with illuminating light (ILB) for exposure, and an image of the mask pattern is projected onto a photosensitive substrate (W) through a projection optical system (PL). A phase plate is disposed on a Fourier transform plane (FTP) of the projection optical system (PL) or on a plane near the Fourier transform plane.

Abstract: A projection exposure apparatus having an illuminating optical system for irradiating a mask having a pattern with illuminating light for exposure, and a projection optical system which is composed of a plurality of optical elements and arranged to take in light emanating from the pattern of the mask and to project an image of the pattern on a photosensitive substrate with predetermined image-forming characteristics. The projection exposure apparatus is provided with a movable retaining member for causing at least one of a plurality of lens elements constituting the projection optical system to move relative to the entire projection optical system in accordance with exchange, loading or unloading of an optical corrector plate, e.g., a pupil filter, which is disposed on a Fourier transform plane of the projection optical system.

Abstract: A system for inspecting a phase-shifted photolithographic mask. This inspection system includes an illumination optical system for illuminating a mask, an imaging optical system for focusing an image of a pattern to be inspected on the mask, and detecting means for detecting the image of the inspection pattern whereby in accordance with one form, the amount of phase shift (.pi.+.delta.) is determined in accordance with the light quantity ratio between the images of phase-shifter deposited portions and phase-shifter non-deposited portions of the inspection pattern in a defocus condition. In accordance with another form, the direction of incidnece of an illuminating light on the mask is changed in such a manner that of the light transmitted through the inspection pattern the other beams than the 0-order diffracted beam and either one of the .+-.