Abstract: A projection exposure apparatus including an irradiation optical system including a light source and irradiating a mask with irradiation light beams, a projection optical system for projecting an image of a pattern of the mask on a substrate, a plurality of first fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed surface with respect to the pattern of the mask in the irradiation optical system or on a plane adjacent to the same and having a center located at a plurality of positions which are eccentric from the optical axis of the irradiation optical system, a plurality of second fly-eye type optical integrators each having an emission side focal plane disposed on a Fourier transformed plane with respect to the incidental end of each of a plurality of the first fly-eye type optical integrators or on a plane adjacent to the same and being disposed to correspond to a plurality of the first fly-eye type optical integrators, and a light divider for dividing

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

Abstract: An exposure apparatus having an illumination system which applies an exposure energy beam to a mask on which a pattern for transfer is formed, and a stage system for positioning a substrate to which the pattern of the mask is transferred, is characterized in that: a gas supply apparatus for supplying a gas of a high transmittivity with respect to the exposure energy beam, and having good thermal conductivity, to at least a portion of an optical path of the exposure energy blam, and a gas recovery apparatus for recovering at least a portion of the gas after the gas is supplied to the optical path of the exposure energy beam from the gas supply apparatus, are provided.

Abstract: A projection exposure apparatus and method forms a first intensity distribution on a predetermined plane substantially conjugate with a pupil plane of a projection optical system. A shaping optical system is located between a light source and an optical integrator of an illumination optical system. The shaping optical system includes a diffraction optical member to generate diffracted light in a direction different from an optical axis of the illumination optical system. In addition, a movable optical element is provided to adjust the first intensity distribution. The first intensity distribution has an increased intensity portion apart from the optical axis relative to a portion of the first intensity distribution on the optical axis.

Abstract: An exposure system includes a chamber and first and second temperature control units. The chamber contains a body of an exposure apparatus which forms a pattern on a substrate. The firs temperature control unit is mounted separate from the body of the exposure apparatus, and controls a temperature of a fluid taken through the body of the exposure apparatus. The second temperature control units is arranged between the body of the exposure apparatus and the first temperature control unit, and controls the temperature of the fluid taken through the first temperature control unit. The second temperature control unit also supplies the fluid to the body of the exposure apparatus. The ability of the second temperature control unit is designed differently from the ability of the first temperature control unit in terms of a magnitude of a temperature range within which the temperature of the fluid changes.

Abstract: In a method of detecting a position of a position detection grating mark formed with a small step structure on a surface of a flat object, an illumination light beam is irradiated on the grating mark at a predetermined incident angle. The illumination light beam includes a plurality of coherent beams having n (n≧3) different wavelengths &lgr;1, &lgr;2, &lgr;3, . . . , &lgr;n. The n wavelengths are set to approximately satisfy the following relation within a range of about ±10%: (1/&lgr;1−1/&lgr;2)−(1/&lgr;2−1/&lgr;3)= . . . =(1/&lgr;n−1−1/&lgr;n) where the wavelengths have a condition &lgr;1<&lgr;2<&lgr;3 . . . <&lgr;n. Photoelectric detection of a change in light amount of a diffracted light component generated from the grating mark in a specific direction is performed upon irradiation of the illumination light beam having the n wavelength components.

Abstract: A photomask producing method according to the present invention segments a parent pattern which is an &agr;-magnification of an original pattern which is a &bgr;-magnification of a circuit pattern into &agr; lengthwise and breadthwise, thereby forming parent patterns on data. The parent patterns are written on a substrate at equal magnification by using an electron beam lithography system, thereby producing master reticles. Reduced images of the parent patterns of the master reticles are transferred on a substrate while performing screen linking, thereby producing working reticle. This photomask producing method can form an original pattern with a high precision and in a short period of time.

Abstract: An exposure method of exposing a mask pattern having linear features in orthogonal first and second directions onto an object including the steps of disposing a diffraction optical element that diffracts light in different directions from an optical axis of the illumination optical system between the light source and an optical integrator in the illumination optical system; distributing the diffracted light at regions apart from the optical axis on a predetermined plane substantially conjugate with a pupil plane of the projection optical system to form on the predetermined plane an intensity distribution having increased intensity portions relative to a portion on first and second axes defined to intersect each other at the optical axis along the first and second directions; and projecting the illuminated pattern having the intensity distribution onto the object.

Abstract: A photomask including a substrate comprised of fluorite (calcium fluoride (CaF2)) and protective films comprised of chrome (Cr), chromium oxide (Cro), silicon oxide (SiO2 or SiO), etc. and formed at regions, other than the pattern region where the pattern to be transferred is formed, which contact other members when transporting the photomask or using it for exposure.

Abstract: In a barrel of an optical unit a ring shaped support member is integrally arranged, and three projected portions are arranged on the upper surface of the support member. The projected portions support a lower surface of a parallel flat plate supported in direct contact. In this supported state, the parallel flat plate opposes a surface of the support member with a clearance of several &mgr;m in between. With this arrangement, the space in one side of the parallel flat plate is substantially isolated from the space in the other side. Accordingly, for example, even if gas environment in the space on one side of the parallel flat plate is different from the other side, gases can be effectively kept from mixing. In addition, since the parallel flat plate is supported at three coplanar points, deformation of the parallel flat plate can be suppressed due to the force supporting the parallel flat plate, thereby suppressing the index of refraction from varying.

Abstract: In a method of detecting a position of a position detection grating mark formed with a small step structure on a surface of a flat object, an illumination light beam is irradiated on the grating mark at a predetermined incident angle. The illumination light beam includes a plurality of coherent beams having n (n≧3) different wavelengths &lgr;1, &lgr;2, &lgr;3, . . . , &lgr;n.

Abstract: In an exposure apparatus, a main controller calculates the thickness of a light transmitting protective member that protects a pattern surface of a mask, based on detection signals of a first and second reflection beams of a detection beam irradiated from an irradiation system, reflected off the front and back surfaces of the protective member, and received by a photodetection system. This makes exposure that takes into account the variation in the image forming state of the image pattern depending on the calculated thickness of the protective member possible. Accordingly, exposure with high precision is possible, without the difference in thickness of the protective member protecting the pattern surface of the mask affecting the exposure. In addition, when the incident angle of the detection beam is optimized, setting a detection offset in the photodetection system, or resetting the origin will not be necessary.

Abstract: The energy amount of the energy beam passing through the illumination optical system is detected with the first photosensor, whereas the energy amount of the energy beam EL passing through at least a portion of the projection optical system PL is detected. And in accordance with the detection results, the main controller controls the exposure amount provided on the substrate during exposure. In the case the transmittance of the energy beam in the optical path from the first photosensor to the substrate surface (image plane) changes, this change is substantially precisely reflected to a value obtained by dividing the detection value of the second photosensor by the detection value of the first photosensor and normalizing the result. Accordingly, the transmittance change of the optical system in the optical path can be substantially cancelled out, allowing an exposure amount control with high precision.

Abstract: A method and apparatus for transferring a fine pattern (12) on a mask (11) onto a substrate (17) by a projection exposure apparatus including an illumination optical system (1-10) for irradiating an illuminating light on the mask (11), and a projection optical system (13) for projecting an image of the fine pattern (12) on the illuminated mask onto the substrate (17).

Abstract: A photomask, on which a transfer pattern is formed, for being irradiated with a predetermined exposure beam, and methods for making and using the photomask and an apparatus for practicing the methods, the mask having a pattern surface on which the pattern is formed and a substrate being transparent with respect to the exposure beam, having a predetermined thickness, and being disposed such that the substrate is separated from the pattern surface at a predetermined distance via a supporting member.

Abstract: An exposure apparatus comprising a light source which emits a light including a main light having a wavelength to expose a substrate and a sub light having a different wavelength from that of the main light collaterally generated in accordance with an oscillation of the main light, a main optical system which introduces a light from the light source to the substrate via the mask, a light sensor having sensitivity to a wavelength including the main light, and a separation device disposed on a light path from the light source to the light sensor, the separation device separating the main light and the sub light.

Abstract: An exposure substrate includes a position detection mark having a recessed or projecting portion formed on the substrate with a difference h in depth. The difference h in depth of the recessed or projecting portion is set to (2m+1)&lgr;/4−0.05&lgr;≦h≦(2m+1)&lgr;/4+0.05&lgr; where &lgr; is the wavelength or center wavelength,-in a photoresist, of a monochromatic or quasimonochromatic detection beam to be irradiated on the position detection mark, and m is an integer not less than 0.

Abstract: A projection optical system has excellent optical performance without substantially being affected by birefringence despite the use of an optical material with intrinsic birefringence such as fluorite, for example. A projection optical system forms a reduced image of a first surface onto a second surface . A first group of radiation transmissive members is formed such that a crystal axis [100] and the optical axis nearly align and similarly a second group of radiation transmissive members is formed such that the crystal axis [100] and the optical axis nearly align. The first grout of radiation transmissive members and the second group of radiation transmissive members have a positional relationship rotated relatively 45 degrees around the center of the light axis. Both the first group of radiation transmissive members and the second group of radiation transmissive members are arranged in an optical path between a pupil position on the second surface side and the second surface.

Abstract: An adjusting method capable of accurately forming a mark for measuring optical characteristics of an optical system, such as an alignment sensor of an exposure system to be used in manufacturing semiconductor devices or the like and correcting an aberration or the like of the optical system with a high precision. A first mark (DM1) having a recess pattern (31a) with a width a provided at a pitch P in a measuring direction and a second mark (DM2) having a recess pattern (32a) with a width c provided at a pitch P have been formed in the vicinity of each other on a wafer (11) for adjustment, and the duty ratio (=a/P) of the recess pattern (31a) of the first mark and the duty ratio (=c/P) of the recess pattern (32a) of the second mark are different. The distance of the images of the two marks (DM1, DM2) is measured, an error in this measured value with respect to a designed value is determined, and the detecting optical system is adjusted in such a way as to reduce this error.

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.