Patents by Inventor Naomasa Suzuki
Naomasa Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8841612Abstract: This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.Type: GrantFiled: August 8, 2011Date of Patent: September 23, 2014Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi, Hiroshi Suzuki, Hiroshi Makino
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Patent number: 8785890Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: GrantFiled: April 26, 2013Date of Patent: July 22, 2014Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi
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Publication number: 20140124664Abstract: A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.Type: ApplicationFiled: December 26, 2011Publication date: May 8, 2014Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Muneyuki Fukuda, Yoichi Ose, Mitsugu Sato, Hiroyuki Ito, Hiroshi Suzuki, Naomasa Suzuki
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Patent number: 8629410Abstract: Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber (4) for disposing a sample (3) therein, a charged particle radiation optical lens tube (1) for irradiating the sample (3) with charged particle radiation (10), ion pumps (2a, 2b) for evacuating the charged particle radiation optical lens tube (1), a frame (16) fixedly attached to the sample chamber (4), the frame (16) facing one end of each of the ion pumps (2a, 2b), and vibration absorbers provided between the frame (16) and the one end of each of the ion pumps (2a, 2b), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet (20a, 20b) sandwiched between metal plates (18a, 18b, 21a, 21b).Type: GrantFiled: June 3, 2010Date of Patent: January 14, 2014Assignee: Hitachi High-Technologies CorporationInventors: Hiroshi Tsuji, Kouji Ishiguro, Ichiro Tachibana, Naomasa Suzuki, Katsunori Onuki
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Publication number: 20130228701Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: ApplicationFiled: April 26, 2013Publication date: September 5, 2013Applicant: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi
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Patent number: 8519334Abstract: The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole.Type: GrantFiled: April 20, 2011Date of Patent: August 27, 2013Assignee: Hitachi High-Technologies CorporationInventors: Satoshi Tadaka, Naomasa Suzuki, Naoma Ban, Tatsuichi Kato
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Patent number: 8467595Abstract: A system is provided that realizes both reduction in coordinate error and improvement in throughput and allows observation of a micro-defect. The system includes: a function of measuring an amount of displacement between preliminarily calculated coordinates and an actual specimen position; a function of optimizing a coordinate correction formula so as to minimize the amount of displacement from the measured amount of displacement; and a function of calculating variation of displacement between the preliminarily calculated coordinates and the actual specimen position by statistical processing. When a value of coordinate variation is sufficiently small with respect to the field of view of an image for observation, which is to be a defect observation image, the system acquires only the image for observation without performing acquisition of an image for search, which is to be a defect search image.Type: GrantFiled: July 27, 2009Date of Patent: June 18, 2013Assignee: Hitachi High-Technologies CorporationInventors: Noritsugu Takahashi, Muneyuki Fukuda, Tomoyasu Shojo, Naomasa Suzuki, Kenji Obara
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Publication number: 20130126733Abstract: This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.Type: ApplicationFiled: August 8, 2011Publication date: May 23, 2013Applicant: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi, Hiroshi Suzuki, Hiroshi Makino
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Patent number: 8431893Abstract: An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.Type: GrantFiled: June 22, 2012Date of Patent: April 30, 2013Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Tomoyasu Shojo, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki, Ichiro Tachibana
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Patent number: 8431915Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: GrantFiled: July 17, 2012Date of Patent: April 30, 2013Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi
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Patent number: 8405026Abstract: Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle.Type: GrantFiled: September 4, 2009Date of Patent: March 26, 2013Assignee: Hitachi High-Technologies CorporationInventors: Tomoyasu Shojo, Muneyuki Fukuda, Naomasa Suzuki, Noritsugu Takahashi
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Patent number: 8389935Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: GrantFiled: April 14, 2009Date of Patent: March 5, 2013Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Naomasa Suzuki, Tomoyasu Shojo, Noritsugu Takahashi
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Publication number: 20130037716Abstract: The present invention provides a contact hole observation technology for avoiding a situation in which it is difficult to observe a contact hole as a nonuniform charge is formed in the contact hole due to a tilted electron beam during a process for forming a preliminary charge on a sample. The present invention also provides a scanning electron microscope based on such a contact hole observation technology. During a preliminary charge process, an electron beam is allowed to become incident in a plurality of directions to perform a precharge, thereby reducing a region within the contact hole that is not irradiated with the electron beam. This reduces the number of secondary electrons that become lost on the wall surface of the contact hole, thereby making it possible to acquire information about the bottom of the contact hole.Type: ApplicationFiled: April 20, 2011Publication date: February 14, 2013Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Satoshi Tadaka, Naomasa Suzuki, Naoma Ban, Tatsuichi Kato
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Publication number: 20120280126Abstract: A lower pole piece of an electromagnetic superposition type objective lens is divided into an upper magnetic path and a lower magnetic path. A voltage nearly equal to a retarding voltage is applied to the lower magnetic path. An objective lens capable of acquiring an image with a higher resolution and a higher contrast than a conventional image is provided. An electromagnetic superposition type objective lens includes a magnetic path that encloses a coil, a cylindrical or conical booster magnetic path that surrounds an electron beam, a control magnetic path that is interposed between the coil and sample, an accelerating electric field control unit that accelerates the electron beam using a booster power supply, a decelerating electric field control unit that decelerates the electron beam using a stage power supply, and a suppression unit that suppresses electric discharge of the sample using a control magnetic path power supply.Type: ApplicationFiled: July 17, 2012Publication date: November 8, 2012Applicant: Hitachi High-Technologies CorporationInventors: Muneyuki FUKUDA, Naomasa SUZUKI, Tomoyasu SHOJO, Noritsugu TAKAHASHI
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Publication number: 20120261574Abstract: An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.Type: ApplicationFiled: June 22, 2012Publication date: October 18, 2012Inventors: Muneyuki Fukuda, Tomoyasu Shojo, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki, Ichiro Tachibana
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Patent number: 8222601Abstract: A scanning electron microscope capable of modifying the focal position of a condenser lens with high speed and high reproducibility in order that low-magnification images are obtained at large depths of focus and that high-magnification images are obtained at high resolution. The microscope has a specimen-holding portion, an electron beam source, a condenser lens for converging the electron beam, an objective lens for focusing the converged beam into a very small spot onto a specimen, scan coils, a detector for detecting a specimen signal emanating from the specimen, and a display portion for displaying the detected specimen signal as an image. An axisymmetric electrode is disposed within the magnetic field produced by the condenser lens. A voltage is applied to the electrode.Type: GrantFiled: January 5, 2011Date of Patent: July 17, 2012Assignee: Hitachi High Technologies CorporationInventors: Ichiro Tachibana, Mitsugu Sato, Naomasa Suzuki
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Patent number: 8207498Abstract: An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an ExB deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.Type: GrantFiled: January 6, 2011Date of Patent: June 26, 2012Assignee: Hitachi High-Technologies CorporationInventors: Muneyuki Fukuda, Tomoyasu Shojo, Mitsugu Sato, Atsuko Fukada, Naomasa Suzuki, Ichiro Tachibana
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Publication number: 20120091362Abstract: Disclosed is a high resolution and high throughput charged particle radiation device that attenuates the natural vibration of an ion pump in a short time, excited by a reaction force at the time of driving the stage, and prevents occurrence of a loop of force and a loop of current. The charged particle radiation device includes a sample chamber (4) for disposing a sample (3) therein, a charged particle radiation optical lens tube (1) for irradiating the sample (3) with charged particle radiation (10), ion pumps (2a, 2b) for evacuating the charged particle radiation optical lens tube (1), a frame (16) fixedly attached to the sample chamber (4), the frame (16) facing one end of each of the ion pumps (2a, 2b), and vibration absorbers provided between the frame (16) and the one end of each of the ion pumps (2a, 2b), each of the vibration absorbers including a layered structure which includes a viscoelastic sheet (20a, 20b) sandwiched between metal plates (18a, 18b, 21a, 21b).Type: ApplicationFiled: June 3, 2010Publication date: April 19, 2012Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hiroshi Tsuji, Kouji Ishiguro, Ichiro Tachibana, Naomasa Suzuki, Katsunori Onuki
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Patent number: 8153969Abstract: In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.Type: GrantFiled: November 25, 2008Date of Patent: April 10, 2012Assignee: Hitachi High-Technologies CorporationInventors: Atsuko Fukada, Mitsugu Sato, Naomasa Suzuki, Hidetoshi Nishiyama, Muneyuki Fukuda, Noritsugu Takahashi
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Publication number: 20110129142Abstract: A system is provided that realizes both reduction in coordinate error and improvement in throughput and allows observation of a micro-defect. The system includes: a function of measuring an amount of displacement between preliminarily calculated coordinates and an actual specimen position; a function of optimizing a coordinate correction formula so as to minimize the amount of displacement from the measured amount of displacement; and a function of calculating variation of displacement between the preliminarily calculated coordinates and the actual specimen position by statistical processing. When a value of coordinate variation is sufficiently small with respect to the field of view of an image for observation, which is to be a defect observation image, the system acquires only the image for observation without performing acquisition of an image for search, which is to be a defect search image.Type: ApplicationFiled: July 27, 2009Publication date: June 2, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Noritsugu Takahashi, Muneyuki Fukuda, Tomoyasu Shojo, Naomasa Suzuki, Kenji Obara