Abstract: A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type on the back surface; a second semiconductor layer of the second conductivity type on the back surface; a first electrode electrically connected to the first semiconductor layer; and an insulating layer for electrically insulating the first semiconductor layer and the second semiconductor layer from each other in a region in which an edge of the first semiconductor layer and an edge of second semiconductor layer overlap. The first electrode includes a first transparent electrode layer and a first collection electrode layer on the first transparent electrode layer. The first transparent electrode layer is separated into a primary electrode layer that is on the first semiconductor layer and a separated electrode layer that is on the second semiconductor layer in the region.

Abstract: A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type on the back surface; a second semiconductor layer of the second conductivity type on the back surface; a first electrode electrically connected to the first semiconductor layer; and an insulating layer for electrically insulating the first semiconductor layer and the second semiconductor layer from each other in a region in which an edge of the first semiconductor layer and an edge of second semiconductor layer overlap. The first electrode includes a first transparent electrode layer and a first collection electrode layer on the first transparent electrode layer. The first transparent electrode layer is separated into a primary electrode layer that is on the first semiconductor layer and a separated electrode layer that is on the second semiconductor layer in the region.

Abstract: A solar cell includes a photoelectric conversion body including one principal surface provided with a p-type surface and an n-type surface, a p-side electrode disposed on the p-type surface, an n-side electrode disposed on the n-type surface, and an insulating layer disposed between the p-side electrode and the n-side electrode and including a convex shaped surface.

Abstract: A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: A vibration detection apparatus includes a vibrating device that generates an alternating voltage by vibration; a power storage part that stores power based on the alternating voltage generated by the vibrating device; and a counter circuit that counts the number of vibrations of the alternating voltage generated by the vibrating device.

Abstract: A power generating apparatus (100) is provided with first substrates (2b, 2c) whereupon a first electrode (3) is arranged on one surface; a second substrate (1a) which includes a second electrode (6) arranged to face a first electrode on the one surface side of the first substrate; and sliding mechanisms (10, 11, 12, 13 and 14) arranged at least on the one surface side or the other surface side of the first substrate. The sliding mechanism holds the first substrate so that the first substrate moves relatively to the second substrate in a second direction (X direction) while suppressing movement of the first substrate in a first direction (Z direction).

Abstract: An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device (1)) comprises movable electrodes (8), an electret film (5) so formed as to face the movable electrodes (8) at a space therebetween, and a stopper (401b) for suppressing the approach of the movable electrodes (8) to the electret film (5) within a predetermined space.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22) and a fixed electrode section (10) having an electret film (12) opposed to the movable electrode section (20) at a predetermined distance and capable of storing charge and a conductive layer (13) formed on a predetermined region on the upper surface of the electret film (12). The conductive layer (13) is formed on the surface of a region of the electret film (12), and the region is projected.

Abstract: A power generating apparatus (100) is provided with first substrates (2b, 2c) whereupon a first electrode (3) is arranged on one surface; a second substrate (1a) which includes a second electrode (6) arranged to face a first electrode on the one surface side of the first substrate; and sliding mechanisms (10, 11, 12, 13 and 14) arranged at least on the one surface side or the other surface side of the first substrate. The sliding mechanism holds the first substrate so that the first substrate moves relatively to the second substrate in a second direction (X direction) while suppressing movement of the first substrate in a first direction (Z direction).

Abstract: A power generator capable of improving power generation efficiency is obtained. This power generator includes a movable portion moving by kinetic energy acting on a power generator body, a first conversion portion converting kinetic energy of the movable portion to electric energy and a movement direction changing portion changing a direction in which the movable portion moves to a direction along a direction in which acceleration applied to the movable portion is larger regardless of a direction of the power generator body.

Abstract: An electrostatic induction power generator includes first and second substrates arranged to be opposed to each other, a third substrate arranged between the first and second substrates, first and second electrodes provided on both surfaces of the third substrate respectively, a third electrode provided on a surface of the first substrate; and a fourth electrode provided on a surface of the second substrate.

Abstract: This electrostatic actuator includes an electret film and a conductor layer formed on the electret film, and the conductor layer is so formed as to have a sectional shape reduced in width upward from the side closer to the electret film.

Abstract: A semiconductor laser device includes a Si(100) substrate in which a recess having an opening and a bottom face surrounded by inner wall surfaces is formed, a semiconductor laser element placed on the bottom face, and a translucent sealing glass, mounted on top of the Si(100) substrate, which seals the opening. The laser light emitted from the semiconductor laser element is reflected by a metallic reflective film formed on the inner wall surface and then transmits through the sealing glass so as to be emitted externally.

Abstract: An electret device includes an electret film into which charges are injected and a barrier film provided on a surface of the electret film and having an electron affinity smaller than the electron affinity of the electret film.

Abstract: An electrostatic induction generator requiring no electric power supply device and capable of being mounted on a printed board is obtained. This electrostatic induction generator includes a pair of first electrodes capable of storing charges, a pair of vibrating electrodes capable of vibrating in a first direction and a second direction different from the first direction, and charged with opposite charges due to charges stored in the pair of first electrodes respectively, and a second electrode for electrically connecting the pair of vibrating electrodes to each other in a case where the pair of vibrating electrodes are at prescribed positions.

Abstract: An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.

Abstract: An electret device includes an electret film capable of storing charges and a charge outflow inhibition film formed on an upper surface of a region having a high charge density in the electret film and inhibiting the charges stored in the electret film from flowing out.

Abstract: An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section (20) having a movable electrode (22), a fixed electrode section (10) having an electret film (12) opposed to the movable section (20) at a predetermined distance and capable of storing charge and a conductive layer (14) formed on a predetermined region on the upper surface of the electret film (12), and an insulating film (13) interposed between the electret film (12) and the conductive layer (14).