Patents by Inventor Naoteru Matsubara

Naoteru Matsubara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including insulation film and fabrication method thereof
    Patent number: 6235648
    Abstract: A semiconductor device including an insulation film superior in insulation characteristic is obtained. Boron ions are introduced by ion implantation into an organic SOG film with a silicon nitride film formed on the organic SOG film. By this boron implantation, the property of the organic SOG film is modified. The moisture and hydroxyl group included in the film are greatly reduced irrespective of the amount of dose of ions. By using such a layered film of a modified SOG film and a silicon nitride film thereupon as an interlayer insulation film or a passivation film, the water resistance of a semiconductor device can be improved sufficiently.
    Type: Grant
    Filed: September 25, 1998
    Date of Patent: May 22, 2001
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Hideki Mizuhara, Hiroyuki Watanabe, Naoteru Matsubara