Abstract: An organic electroluminescent device of which emission life may be improved. The organic electroluminescent device includes an anode, an emission layer, and an anode-side hole transport layer provided between the anode and the emission layer and including an anode-side hole transport material. An electron accepting material is doped in the anode-side hole transport layer. An intermediate hole transport material layer is provided between the anode-side hole transport layer and the emission layer and includes an intermediate hole transport material, and an emission layer-side hole transport layer is provided between the intermediate hole transport material layer and the emission layer and adjacent to the emission layer. The emission layer-side hole transport layer includes an emission layer-side hole transport material represented by the following Formula 1.

Abstract: A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Abstract: A material for an organic electroluminescent device having high emission efficiency and long life and an organic electroluminescent device including the same. The material for an organic electroluminescent device is represented by the following Formula 5.

Abstract: A material for an organic electroluminescent device having high emission efficiency and long life, and an organic electroluminescent device including the same. The material for an organic electroluminescent device may be represented by Formula (1).

Abstract: A material for an organic electroluminescent device according to embodiments of the present disclosure is represented by the following Formula (1). The material for an organic electroluminescent device may have high emission efficiency and the organic electroluminescent device including the material may have improved characteristics.

Abstract: An organic electroluminescent device includes an anode, an emission layer, an anode-side hole transport layer on the anode and the emission layer, the anode-side hole transport layer including an anode-side hole transport material and the anode-side hole transport layer being doped with an electron accepting material, an intermediate hole transport material layer between the anode-side hole transport layer and the emission layer, the intermediate hole transport layer including an intermediate hole transport material, and an emission layer-side hole transport material between the intermediate hole transport material layer and the emission layer and adjacent to the emission layer, the emission layer-side hole transport material layer including an emission layer-side hole transport material represented by the following General Formula (1): where Ar1, Ar2, Ar3, Ar4, L1, and L2 are as defined in the specification.

Abstract: A compound for an organic electroluminescence device and an organic electroluminescence device, the compound being represented by the following Chemical Formula 1:

Abstract: A compound for an organic electroluminescent device and an organic electroluminescent device, the compound being represented by the following Formula 1:

Abstract: A compound for an organic electroluminescence device and an organic electroluminescence device, the compound being represented by the following Chemical Formula 1:

Abstract: An amine derivative represented by the following General Formula (1) is provided. In the above General Formula (1), Ar1, Ar2 and Ar3 are independently a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group, at least one of Ar1, Ar2 and Ar3 is substituted with a substituted or unsubstituted silyl group, and L is a single bond, a substituted or unsubstituted arylene group, or a substituted or unsubstituted heteroarylene group.

Abstract: A material for an organic electroluminescence (EL) device includes a triarylamine derivative represented by the following Formula 1:

Abstract: A compound for an organic electroluminescence device and an organic electroluminescence device, the compound including a triarylamine moiety, and a heterocyclic moiety represented by the following Formula (1):

Abstract: The semiconductor device includes an oxide semiconductor; a source electrode and a drain electrode in contact with the oxide semiconductor; a gate insulating film over the oxide semiconductor, the source electrode, and the drain electrode; and a gate electrode overlapping the oxide semiconductor, part of the source electrode, and part of the drain electrode with the gate insulating film positioned therebetween. The source electrode and the drain electrode each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti), and the thickness of a region of the oxide semiconductor over which neither the source electrode nor the drain electrode is provided is smaller than the thicknesses of regions of the oxide semiconductor over which the source electrode and the drain electrode are provided.

Abstract: A new semiconductor device in which a metal film containing Cu is used for a transistor including an oxide semiconductor film, and a method for manufacturing the semiconductor device are provided. The semiconductor device includes a transistor including a first gate electrode layer, a first gate insulating film over the first gate electrode layer, an oxide semiconductor film that is provided over the first gate insulating film to overlap the first gate electrode layer, a pair of electrode layers electrically connected to the oxide semiconductor film, a second gate insulating film over the oxide semiconductor film and the pair of electrode layers, and a second gate electrode layer that is over the second gate insulating film to overlap the oxide semiconductor film. The pair of electrode layers includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract: A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45?; and the resist mask is removed. The first conductive film contains copper.

Abstract: According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

Abstract: A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45°; and the resist mask is removed. The first conductive film contains copper.

Abstract: It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.

Abstract: A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.

Abstract: A wiring which is formed using a conductive film containing copper and whose shape is controlled is provided. A transistor including an electrode which is formed in the same layer as the wiring is provided. Further, a semiconductor device including the transistor and the wiring is provided. A resist mask is formed over a second conductive film stacked over a first conductive film; part of the second conductive film and part of the first conductive film are removed with use of the resist mask as a mask so that the first conductive film has a taper angle greater than or equal to 15° and less than or equal to 45°; and the resist mask is removed. The first conductive film contains copper.