Abstract: A connector is provided that has multiple electrode rings which are arranged in a row and capable of allowing multiple wires to pass therein The connector also has a relay ring capable of allowing the multiple wires to pass therein. The relay ring has a first mating part fitted to one electrode ring of two adjacent electrode rings and a second mating part fitted to the other electrode ring.

Abstract: A connector is provided having a shaft member and a wire substrate. The wire substrate is wound helically on a surface of the shaft member. The wire substrate includes a band-shaped base material, a plurality of conductive wires provided on one surface of the base material, and a plurality of contact pads provided on another surface of the base material. Each of the conductive wires is connected to each of the contact pads, and the contact pads are exposed on an outside of the wire substrate aligned so as to open a gap in a length direction of the shaft member, in a state where the wire substrate is wound helically on the surface of the shaft member.

Abstract: A cable assembly is provided which includes a sensor body, a sensor having terminals disposed on a terminal array surface of the sensor body, and a cable holder fixed to the terminal array surface of the sensor body. The cable holder has protruding connection grooves provided at positions corresponding to the terminals of the cable holder and extending from a connection surface on the sensor side toward a cable extension surface on the opposite side. The cable assembly further includes a cable which is joined to the cable holder by soldering inner core wires to the terminals and the connection grooves.

Abstract: A connector is provided having a shaft member and a wire substrate. The wire substrate is wound helically on a surface of the shaft member. The wire substrate includes a band-shaped base material, a plurality of conductive wires provided on one surface of the base material, and a plurality of contact pads provided on another surface of the base material. Each of the conductive wires is connected to each of the contact pads, and the contact pads are exposed on an outside of the wire substrate aligned so as to open a gap in a length direction of the shaft member, in a state where the wire substrate is wound helically on the surface of the shaft member.

Abstract: The connecting device is composed of a first connecting member having a first housing receiving a connected first waveguide, and a second connecting member having a second housing receiving a connected second waveguide, the first housing having a first mating surface and a first magnet, and the second housing having a second mating surface and a second magnet, and the first connecting member and the second connecting member being displaced relative to each other in a mating direction orthogonal to the axial direction of the first waveguide and the second waveguide, and being positioned relative to each other by the magnetic force of the first magnet and the second magnet.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: The connecting device is composed of a first connecting member having a first housing receiving a connected first waveguide, and a second connecting member having a second housing receiving a connected second waveguide, the first housing having a first mating surface and a first magnet, and the second housing having a second mating surface and a second magnet, and the first connecting member and the second connecting member being displaced relative to each other in a mating direction orthogonal to the axial direction of the first waveguide and the second waveguide, and being positioned relative to each other by the magnetic force of the first magnet and the second magnet.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: To reduce electromagnetic wave transmission loss, a connecting portion is provided on the end portion of a waveguide. A connecting portion has a first half and a second half, each made of a dielectric material. An antenna formed on a printed circuit board is interposed between the first half and the second half. The connecting portion has conductive portions and. The conductive portions have a shape corresponding to the cross-section of the conductive portion of the waveguide in cross-section orthogonal to the direction in which the circuit board extends, and surround the first half and the second half.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A method of manufacturing a semiconductor device including performing a first thermal processing a silicon substrate in a first atmosphere and at a first temperature to remove an oxide film above a surface of the silicon substrate, and after the first thermal processing, performing a second thermal processing the silicon substrate in a second atmosphere containing hydrogen and at a second temperature lower than the first temperature to terminate the surface of the silicon substrate with hydrogen.

Abstract: A semiconductor device includes a semiconductor substrate, a gate insulating film formed over the semiconductor substrate, a gate electrode formed on the gate insulating film, a first semiconductor layer which is embedded into a portion on both sides of the gate electrode in the semiconductor substrate, and which includes Si and a 4B group element other than Si, and a second semiconductor layer which is embedded into the portion on both sides of the gate electrode in the semiconductor substrate, so as to be superposed on the first semiconductor layer, and which includes Si and a 4B group element other than Si, wherein the gate electrode is more separated from an end of the first semiconductor layer than from an end of the second semiconductor layer.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.

Abstract: To reduce electromagnetic wave transmission loss, a connecting portion is provided on the end portion of a waveguide. A connecting portion has a first half and a second half, each made of a dielectric material. An antenna formed on a printed circuit board is interposed between the first half and the second half. The connecting portion has conductive portions and. The conductive portions have a shape corresponding to the cross-section of the conductive portion of the waveguide in cross-section orthogonal to the direction in which the circuit board extends, and surround the first half and the second half.

Abstract: A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and drain regions of a p-type diffusion region formed in the silicon substrate at respective outer sides of sidewall insulation films of the gate electrode, and a pair of SiGe mixed crystal regions formed in the silicon substrate at respective outer sides of the sidewall insulation films in epitaxial relationship to the silicon substrate, the SiGe mixed crystal regions being defined by respective sidewall surfaces facing with each other, wherein, in each of the SiGe mixed crystal regions, the sidewall surface is defined by a plurality of facets forming respective, mutually different angles with respect to a principal surface of the silicon substrate.