Abstract: In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.

Abstract: In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.

Abstract: In a method of holding a substrate and a substrate holding system where, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.

Abstract: In a method of a holding substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions.

Abstract: A vacuum treating apparatus having a vacuum treating chamber for treating a to-be-treated substrate in vacuum, includes a plurality of substrate cassettes which are installed in the open air and hold substrates that are to be conveyed into the vacuum treating chamber, a device for conveying the substrates between the substrate cassettes and the vacuum treating chamber, and a device which selects either that the to-be-treated substrate after treated in the vacuum treating chamber be held in the substrate cassette from which the to-be-treated substrate was taken out or that the to-be-treated substrate after treated in the vacuum treating chamber be held in another substrate cassette which is different from the substrate cassette.

Abstract: This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. Before the step of holding the sample on the sample bed and supplying the heat transfer gas, heat transfer gas remaining upstream and downstream of the flow rate regulator in the supply line for the heat transfer gas is vacuum exhausted. This is accomplished using a bypass line connected upstream and downstream of the flow rate regulator and an arrangement of appropriate valves.

Abstract: A multiprocessing apparatus has a plurality of process processors connected to a carrier processor and controlled by a control system, wherein the apparatus includes connection information signal generating means for generating a connection information signal expressing information of connection of the plurality of process processors to the carrier processor, switching means for generating a registration information signal expressing information of registration of connection of the plurality of process processors to the carrier processor, and control means for carrying out a control process while logically judging a matching state between the connected process processors and the registered process processors by reference to the connection information and the registration information. Thus, it is possible to provide a multiprocessing apparatus in which process processors to be connected to the carrier processor can be increased or decreased in number easily and securely.

Abstract: To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump. Further, the exhaust arrangement can be provided at a shifted position so as to allow a work space beneath a work table.

Abstract: A plasma processing method for processing a thin film formed on a substrate or forming a thin film on a substrate within a vacuum vessel provides for supplying a gas into the vacuum vessel, producing a plasma in the vacuum vessel by applying a microwave to the gas, and creating a static magnetic field represented by magnetic lines of force parallel to the direction of propagation of the microwave in the vacuum vessel by a magnetic circuit. The field intensity of the static magnetic field is determined taking into consideration the frequency of the microwave so that the same is lower than the field intensity at which electron cyclotron resonance occurs.

Abstract: A microwave penetrating window and a cavity which are substantially equal in diameter to a plasma generating chamber are successively connected to the plasma generating chamber and microwaves are introduced via the cavity into the plasma generating chamber. A processing gas in the plasma generating chamber is converted into a plasma by means of the microwaves introduced into the plasma generating chamber and the microwaves in specific modes are resonated in between a microwave reflective interface with the plasma generated in the plasma generating chamber and the reflective edge face of the cavity. The microwaves in the specific modes are thus formed in the cavity and the energy of the microwaves in the specific modes is increased by resonance. The boosted energy is added to the plasma and the plasma is densified accordingly. Moreover, a plasma excellent in uniformity and stability can be generated by resonating the microwaves in the specific modes in the presence of a uniform electromagnetic field.

Abstract: A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.

Abstract: This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. In this way, a sample temperature can be regulated rapidly without increasing the scale of the apparatus.

Abstract: A semiconductor device manufacturing apparatus and its method, measures the amount or chemical composition of reaction products adhering to or deposited on the inside of a processing chamber of the semiconductor device manufacturing apparatus, without exposing the chamber to the air. External light, such as infrared light, is introduced from a light introducing unit into the processing chamber. A light receiving unit provided outside the processing chamber receives light reflected from a specified location inside the processing chamber or light reflected from an arbitrary location inside the chamber. The received light is then subjected to spectrometry or photometry to judge how badly the chamber is contaminated and to judge the state of the process being carried out.

Abstract: A wafer processing apparatus comprises a vacuum processing chamber, and a wafer holder disposed within the vacuum processing chamber to hold a wafer to be processed fixedly thereon by electrostatic attraction. A cooling or heating gas is supplied into the space between the surface of the wafer holder and the backside of a wafer set on the wafer holder to cool or heat the wafer. In case the electrostatic attraction disappears accidentally due to, for example, power failure, the cooling or heating gas in the space between the surface of the wafer holder and the backside of the wafer set on the wafer holder is discharged quickly upon the disappearance of the electrostatic attraction between the wafer holder and the wafer to prevent the wafer being caused to float and being dislocated by the pressure of the cooling or heating gas existing in the space between the surface of the wafer holder and the backside of the wafer.

Abstract: A multiprocessing apparatus has a plurality of process processors connected to a carrier processor and controlled by a control system, wherein there are provided connection information signal generating means for generating a connection information signal expressing information of connection of the plurality of process processors to the carrier processor; switching means for generating a registration information signal expressing information of registration of connection of the plurality of process processors to the carrier processor; and control means for carrying out a control process while logically judging a matching state between the connected process processors and the registered process processors by reference to the connection information and the registration information. Thus, it is possible to provide a multiprocessing apparatus in which the number of process processors to be connected to the carrier processor can be securely increased or decreased.

Abstract: A vacuum processing system of a type in which wafer cassettes each accommodating a plurality of wafers to be treated are supplied to deliver the wafers and wafer cassettes collecting the treated wafers are taken out. To enable the vacuum treatment, the vacuum processing system has a structure comprising:a plurality of wafer cassettes each being set in the atmospheric air and holding a plurality of wafers to be treated; at least one vacuum processing chamber for effecting vacuum treatment on the wafers; at least one load-lock chamber disposed between the cassettes and the vacuum processing chamber, the wafers being transferred into and out of vacuum atmosphere in the vacuum processing chamber through the load-lock chamber; and a wafer transfer device for transferring the wafers from each of the cassettes to the load-lock chamber and vice versa.

Abstract: To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump.

Abstract: An air nozzle for use in the production of nonwoven fabric that is adapted to receive spun filaments from a spinning nozzle and feed the filaments in an air jet into a receiver. The air nozzle is directed to the prevention of any abrasion of the inner surface of the nozzle body by an additive, such as titanium white, contained in filaments, and thus to the prevention of any defects in the nonwoven fabric. The inner surface of a nozzle body for guiding filaments is formed using a ceramic material to protect that surface. The nozzle body has a conical passage whose diameter gradually decreases from an inlet for receiving the filaments from the spinning nozzle, and a straight passage continuing from the conical passage and extending with a constant diameter, at least part of the inner surface of the conical passage and/or the straight passage being formed as a ceramic surface.

Abstract: This invention relates to a vacuum processing method and apparatus. When a sample is plasma-processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. In this way, a sample temperature can be regulated rapidly without increasing the scale of the apparatus.

Abstract: An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.