Patents by Inventor Nathan F. Gardner
Nathan F. Gardner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10553767Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.Type: GrantFiled: January 8, 2018Date of Patent: February 4, 2020Assignee: GLO ABInventors: Fariba Danesh, Nathan F. Gardner, Jonathan J. Wierer, Jr.
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Patent number: 10312404Abstract: In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.Type: GrantFiled: February 15, 2018Date of Patent: June 4, 2019Assignee: LUMILEDS LLCInventors: Sungsoo Yi, Nathan F. Gardner, Michael R. Krames, Linda T. Romano
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Publication number: 20180198047Abstract: An LED subpixel can be provided with a reflector layer that controls viewing angles. After formation of an array of nanowires including first conductivity type cores and active layers, a second conductivity type semiconductor material layer, a transparent conductive oxide layer, and a dielectric material layer are sequentially formed. An opening is formed through the dielectric material layer over the array of nanowires. The reflector layer can be formed around the array of nanowires and through the opening in the dielectric material layer on the transparent conductive oxide layer. A conductive bonding structure is formed in electrical contact with the reflector layer.Type: ApplicationFiled: January 8, 2018Publication date: July 12, 2018Inventors: Fariba DANESH, Nathan F. GARDNER, Jonathan J. WIERER, JR.
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Publication number: 20180175236Abstract: In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.Type: ApplicationFiled: February 15, 2018Publication date: June 21, 2018Inventors: Sungsoo Yi, Nathan F. Gardner, Michael R. Krames, Linda T. Romano
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Patent number: 9911896Abstract: In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.Type: GrantFiled: July 6, 2010Date of Patent: March 6, 2018Assignees: Koninklijke Phillips N.V., Lumileds LLCInventors: Sungsoo Yi, Nathan F. Gardner, Michael R. Krames, Linda T. Romano
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Patent number: 9640724Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.Type: GrantFiled: September 30, 2014Date of Patent: May 2, 2017Assignee: Lumileds LLCInventors: Yu-Chen Shen, Nathan F. Gardner, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller
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Publication number: 20170117440Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.Type: ApplicationFiled: September 30, 2014Publication date: April 27, 2017Inventors: YU-CHEN SHEN, NATHAN F. GARDNER, SATOSHI WATANABE, MICHAEL R. KRAMES, GERD O. MUELLER
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Patent number: 9012250Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.Type: GrantFiled: April 17, 2012Date of Patent: April 21, 2015Assignee: Koninklijke Philips Electronics N.V.Inventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
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Patent number: 9000450Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: GrantFiled: February 24, 2012Date of Patent: April 7, 2015Assignee: Philips Lumileds Lighting Company LLCInventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner
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Patent number: 8847252Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.Type: GrantFiled: June 30, 2009Date of Patent: September 30, 2014Assignee: Philips Lumileds Lighting Company, LLCInventors: Yu-Chen Shen, Nathan F. Gardner, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller
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Patent number: 8492244Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: GrantFiled: April 7, 2011Date of Patent: July 23, 2013Assignee: SoitecInventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Patent number: 8486771Abstract: Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods.Type: GrantFiled: September 21, 2009Date of Patent: July 16, 2013Assignee: SoitecInventors: Fabrice Letertre, Bruce Faure, Michael R. Krames, Nathan F. Gardner
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Patent number: 8481408Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.Type: GrantFiled: April 27, 2012Date of Patent: July 9, 2013Assignee: SoitecInventors: Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin B. McLaurin, Nathan F. Gardner
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Patent number: 8334155Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.Type: GrantFiled: September 27, 2005Date of Patent: December 18, 2012Assignee: Philips Lumileds Lighting Company LLCInventors: Michael R. Krames, Nathan F. Gardner, John E. Epler
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Patent number: 8288186Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.Type: GrantFiled: September 22, 2010Date of Patent: October 16, 2012Assignee: Philips Lumileds Lighting Company LLCInventors: Michael R. Krames, Nathan F. Gardner, John E. Epler
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Publication number: 20120214291Abstract: A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.Type: ApplicationFiled: April 27, 2012Publication date: August 23, 2012Applicant: SOITECInventors: Fabrice Letertre, Carlos Mazure, Michael R. Krames, Melvin B. McLaurin, Nathan F. Gardner
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Publication number: 20120205691Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.Type: ApplicationFiled: April 17, 2012Publication date: August 16, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
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Publication number: 20120161187Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: ApplicationFiled: February 24, 2012Publication date: June 28, 2012Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Jonathan J. Wierer, JR., Michael R. Krames, Nathan F. Gardner
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Patent number: 8183577Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.Type: GrantFiled: June 30, 2009Date of Patent: May 22, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Sungsoo Yi, Nathan F. Gardner, Qi Laura Ye
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Patent number: 8163575Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.Type: GrantFiled: June 17, 2005Date of Patent: April 24, 2012Assignee: Philips Lumileds Lighting Company LLCInventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner