Patents by Inventor Nathan F. Gardner
Nathan F. Gardner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8154052Abstract: In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.Type: GrantFiled: May 6, 2010Date of Patent: April 10, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Nathan F. Gardner, Aurelien J. F. David, Oleg B. Shchekin
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Patent number: 8105852Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.Type: GrantFiled: January 15, 2010Date of Patent: January 31, 2012Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Nathan F. Gardner, Michael R. Krames, Melvin B. McLaurin, Sungsoo Yi
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Publication number: 20110272720Abstract: In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element comprising a wavelength converting material disposed in a transparent material, a seed layer comprising a material on which III-nitride material will nucleate, and a bonding layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a III-nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.Type: ApplicationFiled: May 6, 2010Publication date: November 10, 2011Applicants: PHILIPS LUMIDLEDS LIGHTING COMPANY, LLC, KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Nathan F. GARDNER, Aurelien J.F. DAVID, Oleg B. SHCHEKIN
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Publication number: 20110180911Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: ApplicationFiled: April 7, 2011Publication date: July 28, 2011Inventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Publication number: 20110177631Abstract: A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.Type: ApplicationFiled: January 15, 2010Publication date: July 21, 2011Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Nathan F. Gardner, Michael R. Krames, Melvin B. McLaurin, Sungsoo Yi
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Patent number: 7981767Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: GrantFiled: December 22, 2008Date of Patent: July 19, 2011Assignee: S.O.I.Tec Silicon on Insulator TechnologiesInventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Patent number: 7951693Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: GrantFiled: December 22, 2006Date of Patent: May 31, 2011Assignee: Philips Lumileds Lighting Company, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano
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Publication number: 20110027975Abstract: A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.Type: ApplicationFiled: September 22, 2010Publication date: February 3, 2011Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael R. Krames, Nathan F. Gardner, John E. Epler
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Patent number: 7880186Abstract: In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm?3 and 5×1019 cm?3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm?3.Type: GrantFiled: March 5, 2007Date of Patent: February 1, 2011Assignees: Koninklijke Phllips Electronics N.V., Phillips Lumileds Lighting Company, LLCInventors: Nathan F. Gardner, Gangyi Chen, Werner K. Goetz, Michael R. Krames, Gerd O. Mueller, Yu-Chen Shen, Satoshi Watanabe
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Patent number: 7863631Abstract: To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.Type: GrantFiled: April 30, 2009Date of Patent: January 4, 2011Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLCInventors: Michael R. Krames, Nathan F. Gardner, Frank M. Steranka
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Publication number: 20100327256Abstract: A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.Type: ApplicationFiled: June 30, 2009Publication date: December 30, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Sungsoo YI, Nathan F. GARDNER, Qi Laura Ye
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Publication number: 20100264454Abstract: In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.Type: ApplicationFiled: July 6, 2010Publication date: October 21, 2010Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Sungsoo YI, Nathan F. GARDNER, Michael R. KRAMES, Linda T. ROMANO
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Patent number: 7808011Abstract: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.Type: GrantFiled: March 19, 2004Date of Patent: October 5, 2010Assignees: Koninklijke Philips Electronics N.V., Philips Lumileds Lights Co., LLCInventors: James C. Kim, John E. Epler, Nathan F. Gardner, Michael R. Krames, Jonathan J. Wierer, Jr.
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Publication number: 20100226404Abstract: A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.Type: ApplicationFiled: May 18, 2010Publication date: September 9, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: James C. Kim, John E. Epler, Nathan F. Gardner, Michael R. Krames, Jonathan J. Wierer, JR.
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Publication number: 20100176490Abstract: Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods.Type: ApplicationFiled: September 21, 2009Publication date: July 15, 2010Inventors: Fabrice LETERTRE, Bruce FAURE, Michael R. Krames, Nathan F. GARDNER
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Patent number: 7663148Abstract: In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.Type: GrantFiled: December 22, 2006Date of Patent: February 16, 2010Assignee: Philips Lumileds Lighting Company, LLCInventors: Sungsoo Yi, Aurelien J. F. David, Nathan F. Gardner, Michael R. Krames, Linda T. Romano
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Publication number: 20100032793Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.Type: ApplicationFiled: December 22, 2008Publication date: February 11, 2010Inventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
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Publication number: 20090261361Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.Type: ApplicationFiled: June 30, 2009Publication date: October 22, 2009Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LUMILEDS LIGHTING COMPANY, LLCInventors: Yu-Chen Shen, Nathan F. Gardner, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller
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Publication number: 20090230381Abstract: To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.Type: ApplicationFiled: April 30, 2009Publication date: September 17, 2009Applicants: KONINKLIJKE PHILIPS ELECTRONICS N.V., PHILIPS LIMILEDS LIGHTING CO., LLCInventors: Michael R. KRAMES, Nathan F. Gardner, Frank M. Steranka
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Patent number: 7547908Abstract: In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane?abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.Type: GrantFiled: December 22, 2006Date of Patent: June 16, 2009Assignee: Philips Lumilieds Lighting Co, LLCInventors: Patrick N. Grillot, Nathan F. Gardner, Werner K. Goetz, Linda T. Romano