Abstract: A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

Abstract: A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

Abstract: A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

Abstract: The extraction efficiency of a light emitting device can be improved by making the absorbing device layers as thin as possible. The internal quantum efficiency decreases as the device layers become thinner. An optimal active layer thickness balances both effects. An AlGaInP LED includes a substrate and device layers including an AlGaInP lower confining layer of a first conductivity type, an AlGaInP active region of a second conductivity type, and an AlGaInP upper confining layer of a second conductivity type. The absorbance of the active region is at least one fifth of the total absorbance in the light-emitting device. The device optionally includes at least one set-back layers of AlGaInP interposing one of confining layer and active region. The p-type upper confining layer may be doped with oxygen improve the reliability.

Abstract: A process for growing semi-insulating layers of indium phosphide and other group III-V materials through the use of halide dopant or etchant introduction during growth. Gas phase epitaxial growth techniques are utilized at low temperatures to produce indium phosphide layers having a resistivity greater than approximately 10.sup.7 ohm-cm. According to the preferred embodiment carbon tetrachloride is used as a dopant at flow rates above 5 sccm to grow the layers with substrate growth temperatures ranging from approximately 460.degree. C. to 525.degree. C. This temperature range provides an advantage over the transition metal techniques for doping indium phosphide since the high temperatures generally required for those techniques limit the ability to control growth. Good surface morphology is also obtained through the growth according to the present invention. The process may be used to form many types of group III-V semiconductor devices.