Patents by Inventor Neng Yang

Neng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process of manufacturing crystalline silicon solar cell
    Patent number: 8647895
    Abstract: A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is formed on a top surface of the phosphosilicate glass film. An Al metallic film is formed as a back ohmic electrode on the Al2O3 film. The local area of the anti-reflection layer SiNx film and the phosphosilicate glass film is melted and removed to form a local area of n+-Si layer. Then, an Al—Si back ohmic contact electrode is formed between the Al metallic film and the crystalline silicon wafer. A front ohmic contact electrode is formed on the molten and removed area of the antireflection layer SiNx film and the phosphosilicate film by light-induced plating.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: February 11, 2014
    Assignee: Institute of Nuclear Energy Research, Atomic Energy Council
    Inventor: Tsun-Neng Yang
  • PROCESS OF MANUFACTURING CRYSTALLINE SILICON SOLAR CELL
    Publication number: 20140038339
    Abstract: A process of manufacturing a crystalline silicon solar cell includes forming a rough surface on a surface of the crystalline silicon wafer and an Al2O3 film is coated on a non-rough surface thereof. A single-sided n diffusion layer and phosphosilicate glass film are formed. An anti-reflection layer SiNx film is formed on a top surface of the phosphosilicate glass film. An Al metallic film is formed as a back ohmic electrode on the Al2O3 film. The local area of the anti-reflection layer SiNx film and the phosphosilicate glass film is melted and removed to form a local area of n+-Si layer. Then, an Al—Si back ohmic contact electrode is formed between the Al metallic film and the crystalline silicon wafer. A front ohmic contact electrode is formed on the molten and removed area of the antireflection layer SiNx film and the phosphosilicate film by light-induced plating.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 6, 2014
    Applicant: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventor: Tsun-Neng Yang
  • PHOTOVOLTAIC SYSTEM ABLE TO FLOAT ON WATER AND TRACK SUN
    Publication number: 20140034110
    Abstract: A photovoltaic system able to float on water and track sun includes a floating mechanism; an adjusting mechanism, combining with the floating mechanism; and a solar power mechanism, combining with the adjusting mechanism and located above the floating mechanism. This photovoltaic system can be located on the water surface, and has its floating mechanism to be under water by using the adjusting mechanism and the surrounding water source. The adjusting mechanism can be further used to adjust the solar power mechanism to a specific tilt angle according to the water level of the surrounding water and the sun-tracking angles that varies as the locations of the sun. Therefore, a novel photovoltaic system with simplified configuration, accurate sun tracking and enhanced power generation efficiency can be achieved.
    Type: Application
    Filed: August 6, 2012
    Publication date: February 6, 2014
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: His-Hung Yang, Wei-Yang Ma, Tsun-Neng Yang
  • THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR SUBSTRATE
    Publication number: 20140027763
    Abstract: A thin film transistor substrate includes a substrate, a gate, a gate insulating layer, a semiconductor layer, a source, a drain and a light-blocking layer. The gate is disposed on the substrate. The gate insulating layer is disposed on the gate. The semiconductor layer is disposed on the gate insulating layer. The source and the drain are disposed on the semiconductor layer with an interval therebetween. The light-blocking layer is disposed on the interval. The semiconductor layer includes an oxide semiconductor. In addition, a display device is also disclosed.
    Type: Application
    Filed: July 18, 2013
    Publication date: January 30, 2014
    Applicant: InnoLux Corporation
    Inventors: Hung-Ming SHEN, Wan-Ling HUANG, Kai-Neng YANG, Tsau-Hua HSIEH
  • PROCESS AND INTERMEDIATES FOR THE SYNTHESIS OF 8-[-METHYL]-8-PHENYL-1,7-DIAZA-SPIRO[4.5]DECAN-2-ONE COMPOUNDS
    Publication number: 20140024834
    Abstract: This application discloses a process to synthesize 8-({1-(3,5-Bis-(trifluoromethyl)phenyl)-ethoxy)-methyl]-8-pheny-1.7-diaza-spiro[4.5]decan-2-one comprising reacting a compound of the Formula 27a-sulfonate with zinc in the presence of acetic acid.
    Type: Application
    Filed: September 27, 2013
    Publication date: January 23, 2014
    Applicant: OPKO HEALTH, INC.
    Inventors: Ingrid MERGELSBERG, Dominik Hermann SCHERER, Monika Erika HUTTENLOCH, Hon-Chung TSUI, Sunil PALIWAL, Neng-Yang SHIH
  • Substituted indole derivatives and methods of use thereof
    Patent number: 8614229
    Abstract: The present invention relates to Substituted Indole Derivatives, compositions comprising at least one Substituted Indole Derivative, and methods of using these Substituted Indole Derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: December 24, 2013
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Gopinadhan N. Anilkumar, Frank Bennett, Tin-Yau Chan, Kevin X. Chen, Mousumi Sannigrahi, Francisco Velazquez, Srikanth Venkatraman, Qingbei Zeng, Jose S. Duca, Charles A. Lesburg, Joseph A. Kozlowski, F. George Njoroge, Stuart B. Rosenblum, Neng-Yang Shih
  • Display Panel, Method for Forming the Same, and Display System
    Publication number: 20130335687
    Abstract: An embodiment of the invention provides a display panel which includes: a first substrate; a second substrate disposed oppositely to the first substrate; a first alignment layer disposed overlying the first substrate; a second alignment layer disposed overlying the second substrate; and a liquid crystal layer disposed between the first alignment layer and the second alignment layer, wherein the first alignment layer is rubbing-aligned and disposed between the first substrate and the liquid crystal layer, and the second alignment layer is photo-aligned and disposed between the second substrate and the liquid crystal layer.
    Type: Application
    Filed: June 11, 2013
    Publication date: December 19, 2013
    Inventors: Hung-Ming SHEN, Wan-Ling HUANG, Kai-Neng YANG, Tsau-Hua HSIEH
  • HYDROCHLORIDE SALTS OF 8-[1-(3,5-BIS-(TRIFLUOROMETHYL)PHENYL)-ETHOXYMETHYL]-8-PHENYL-1,7-DIAZASPIRO[4,5]DECAN-2-ONE AND PREPARATION PROCESS THEREFOR
    Publication number: 20130281477
    Abstract: Disclosed are hydrochloride and tosylate crystalline salt forms of (5S,8S)-8-[{(1R)-1-(3,5-Bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diazaspiro[4.5]decan-2-one, represented by Formula I and methods of preparing the same.
    Type: Application
    Filed: June 21, 2013
    Publication date: October 24, 2013
    Inventors: Mengwei Hu, Sunil Paliwal, Neng-Yang Shih, Frank Bruno Guenter, Ingrid Mergelsberg
  • 4,5-ring annulated indole derivatives for treating or preventing of HCV and related viral infections
    Patent number: 8557848
    Abstract: The present invention relates to 4,5-ring annulated indole derivatives, compositions comprising at least one 4,5-ring annulated indole derivatives, and methods of using the 4,5-ring annulated indole derivatives for treating or preventing a viral infection or a virus-related disorder in a patient. Wherein ring Z, of formula (I), is a cyclopentyl, cyclopentenyl, 5-membered heterocycloalkyl, 5-membered heterocycloalkenyl or 5-membered heteroaryl ring.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: October 15, 2013
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Kevin X. Chen, Srikanth Venkatraman, F. George Njoroge, Stuart B. Rosenblum, Charles A. Lesburg, Jose S. Duca, Neng-Yang Shih, Francisco Velazquez, Gopinadhan N. Anilkumar, Qingbei Zeng, Joseph A. Kozlowski
  • Process and intermediates for the synthesis of 8-[{1-(3,5-bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diaza-spiro[4.5]decan-2-one compounds
    Patent number: 8552191
    Abstract: This application discloses a novel process to synthesize 8-[{1-(3,5-Bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diaza-spiro[4.5]decan-2-one compounds, which may be used, for example, as NK-1 inhibitor compounds in pharmaceutical preparations.
    Type: Grant
    Filed: March 20, 2008
    Date of Patent: October 8, 2013
    Assignee: Opko Health, Inc.
    Inventors: Ingrid Mergelsberg, Dominik Hermann Scherer, Monika Erika Huttenloch, Hon-Chung Tsui, Sunil Paliwal, Neng-Yang Shih
  • 4, 5-ring annulated indole derivatives for treating or preventing of HCV and related viral infections
    Patent number: 8546420
    Abstract: The present invention relates to 4,5-ring annulated indole derivatives of formula (I), compositions comprising at least one 4,5-ring annulated indole derivatives, and methods of using the 4,5-ring annulated indole derivatives for treating or preventing a viral infection or a virus-related disorder in a patient, wherein ring Z of formula (I), is cyclohexyl, cyclohexenyl, 6-membered heterocycloalkyl, 6-membered heterocycloalkenyl, 6-membered aryl or 6-membered heteroaryl, wherein R1, R2, R3, R6, R7 and R10 are as described herein.
    Type: Grant
    Filed: December 17, 2007
    Date of Patent: October 1, 2013
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Gopinadhan N. Anilkumar, Yueheng Jiang, Stuart B. Rosenblum, Srikanth Venkatraman, Francisco Velazquez, Neng-Yang Shih, F. George Njoroge, Joseph A. Kozlowski
  • Compounds that are ERK inhibitors
    Patent number: 8546404
    Abstract: Disclosed are the ERK inhibitors of formula 1.0: and the pharmaceutically acceptable salts, esters and solvates thereof. Q is a piperidine or piperazine ring that can have a bridge or a fused ring. The piperidine ring can have a double bond in the ring. All other substitutents are as defined herein. Also disclosed are methods of treating cancer using the compounds of formula 1.0.
    Type: Grant
    Filed: June 5, 2007
    Date of Patent: October 1, 2013
    Assignee: Merck Sharp & Dohme
    Inventors: Alan B. Cooper, Yongqi Deng, Gerald W. Shipps, Jr., Neng-Yang Shih, Hugh Y. Zhu, Robert Sun, Joseph M. Kelly, Ronald J. Doll, Yang Nan, Tong Wang, Jagdish A. Desai, James J-S Wang, Youhao Dong, Vincent S. Madison, Li Xiao, Alan W. Hruza, M. Arshad Siddiqui, Ahmed A. Samatar, Sunil Paliwal, Hon-Chung Tsui, Azim Alan Celebi, Yiji Wu, Sobhana Babu Boga, Abdul-Basit Alhassan, Xiaolei Gao, Liang Zhu, Mehul Patel
  • Ethynyl-substituted pyridine and pyrimidine derivatives and their use in treating viral infections
    Patent number: 8541434
    Abstract: The present invention provides compounds of Formula (I): and tautomers, isomers, and esters of said compounds, and pharmaceutically acceptable salts, solvates, and pro-drugs of said compounds, wherein each of R, R1, X, Y, Z, R2, R3, R4, R5, R6, R7, R8, R9, R18, R19 and n is selected independently and as defined herein. Compositions comprising such compounds are also provided. The compounds of the invention are effective as inhibitors of HCV, and are useful, alone and together with other therapeutic agents, in treating or preventing diseases or disorders such as viral infections and virus-related disorders.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: September 24, 2013
    Assignees: Merck Sharp & Dohme Corp., Southern Research Institute
    Inventors: Cecil D. Kwong, F. George Njoroge, Subramaniam Ananthan, Ashok Arasappan, Frank Bennett, Jeremy Clark, Anita T. Fowler, Feng Geng, Hollis S. Kezar, III, Joseph A. Maddry, John J. Piwinski, Robert C. Reynolds, Abhijit Roychowdhury, John A. Secrist, III, Neng-Yang Shih
  • DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20130194533
    Abstract: A display device employing a liquid crystal module and a method for fabricating the display device are provided. The liquid crystal module includes a first substrate and a second substrate, wherein the first substrate is disposed opposite to the second substrate; a first photo-alignment layer disposed on a top surface of the first substrate, and a second photo-alignment layer disposed on a bottom surface of the second substrate, wherein the first and second photo-alignment layers include a plurality of protrusions, and wherein the protrusions are formed by polymerizing non-polar monomers having two or three acrylate functional groups; and a liquid crystal layer disposed between the first and second photo-alignment layers.
    Type: Application
    Filed: January 30, 2013
    Publication date: August 1, 2013
    Applicant: INNOLUX CORPORATION
    Inventors: Rong-Ching YANG, Wei-Chuan HUANG, Han-Chang CHEN, Shih-Fang LIAO, Hung-Ming SHEN, Wan-Ling HUANG, Kai-Neng YANG, Tsau-Hua HSIEH
  • AZO-substituted pyridine and pyrimidine derivatives and their use in treating viral infections
    Patent number: 8470834
    Abstract: The present invention provides compounds of Formula (I): (Chemical formula should be inserted here as it appears on abstract in paper form) (I) and tautomers, isomers, and esters of said compounds, and pharmaceutically acceptable salts, solvates, and prodrugs of said compounds, wherein each of R, R1, X, Y, Z, R2, R3, R4, R5, R6, R7, R8, R9, R18, R19, and n is selected independently and as defined herein. Compositions comprising such compounds are also provided. The compounds of the invention are effective as inhibitors of HCV, and are useful, alone and together with other therapeutic agents, in treating or preventing diseases or disorders such as viral infections and virus-related disorders.
    Type: Grant
    Filed: August 19, 2009
    Date of Patent: June 25, 2013
    Assignees: Merck Sharp & Dohme Corp., Southern Research Institute
    Inventors: Cecil D. Kwong, F. George Njoroge, Subramaniam Ananthan, Feng Geng, Hollis S. Kezar, III, Joseph A. Maddry, John J. Piwinski, Robert C. Reynolds, John A. Secrist, III, Neng-Yang Shih
  • Hydrochloride salts of 8-[{1-(3,5-Bis-trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diaza-spiro[4.5]decan-2-one and preparation process therefor
    Patent number: 8470842
    Abstract: Disclosed are hydrochloride and tosylate crystalline salt forms of (5S,8S)-8-[{(1R)-1-(3,5-Bis-(trifluoromethyl)phenyl)-ethoxy}-methyl]-8-phenyl-1,7-diazaspiro[4.5]decan-2-one, represented by Formula I and methods of preparing the same.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: June 25, 2013
    Assignee: OPKO Health, Inc.
    Inventors: Mengwei Hu, Sunil Paliwal, Neng-Yang Shih, Frank Bruno Guenter, Ingrid Mergelsberg
  • In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer
    Publication number: 20130149843
    Abstract: An in-situ gettering method for removing impurities from the surface and interior of a upgraded metallurgical grade silicon wafer is continuously conducted in a reaction chamber. Chloride gas is mixed with carrier gas. The gaseous mixture is used to clean the surface of the silicon wafer. Then, the gaseous mixture is used to form a porous structure on the surface of the silicon wafer before hot annealing is executed. Finally, the gaseous mixture is used to execute hot etching on the surface of the silicon wafer and remove the porous structure from the surface of the silicon wafer. As the chloride gas is used to clean the surface of the silicon wafer and form the porous structure on the surface of the silicon wafer, external gettering is improved. Moreover, interstitial-type metal impurities are effectively removed from the interior of the silicon wafer.
    Type: Application
    Filed: December 7, 2011
    Publication date: June 13, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Jin-Jang Jheng, Tsun-Neng Yang, Chin-Chen Chiang
  • Method of fabricating Al2O3 thin film layer
    Patent number: 8450219
    Abstract: An Al2O3 thin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the Al2O3 thin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: May 28, 2013
    Assignee: Atomic Energy Council—Institute of Nuclear Research
    Inventor: Tsun-Neng Yang
  • Method of Fabricating Al2O3 Thin Film Layer
    Publication number: 20130084715
    Abstract: An Al2O3 thin film layer is fabricated. Atmospheric pressure chemical vapor deposition (APCVD) is processed in a normal atmospheric pressure and a low temperature. On a surface of a p-type or n-type silicon crystal wafer having a purity between 5N (99.999%) and 9N (99.9999999%), the Al2O3 thin film layer is deposited and fabricated. The deposition and fabrication are done to obtain chemical passivation and field effect passivation. In this way, the present invention can be applied in solar cells and other photoelectric devices with reduced leakage of surface currents and improved photoelectric conversion.
    Type: Application
    Filed: September 29, 2011
    Publication date: April 4, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventor: Tsun-Neng Yang
  • Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell
    Publication number: 20130071967
    Abstract: Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.
    Type: Application
    Filed: September 21, 2011
    Publication date: March 21, 2013
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventors: Yu-Han Su, Wei-Yang Ma, Tsun-Neng Yang