Patents by Inventor Neng Yang

Neng Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8017616
    Abstract: The present application discloses a compound, or enantiomers, stereoisomers, rotamers, tautomers, racemates or prodrug of said compound, or pharmaceutically acceptable salts, solvates or esters of said compound, or of said prodrug, said compound having the general structure shown in Formula 1: or a pharmaceutically acceptable salt, solvate or ester thereof. Also disclosed is a method of treating chemokine mediated diseases, such as, palliative therapy, curative therapy, prophylactic therapy of certain diseases and conditions such as inflammatory diseases (non-limiting example(s) include, psoriasis), autoimmune diseases (non-limiting example(s) include, rheumatoid arthritis, multiple sclerosis), graft rejection (non-limiting example(s) include, allograft rejection, xenograft rejection), infectious diseases (e.g, tuberculoid leprosy), fixed drug eruptions, cutaneous delayed-type hypersensitivity responses, ophthalmic inflammation, type I diabetes, viral meningitis and tumors using a compound of Formula 1.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: September 13, 2011
    Assignees: Schering Corporation, Pharmacopeia, Inc.
    Inventors: Stuart B. Rosenblum, Joseph A. Kozlowski, Neng-Yang Shih, Brian F. McGuinness, Douglas W. Hobbs
  • Publication number: 20110210330
    Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.
    Type: Application
    Filed: May 11, 2011
    Publication date: September 1, 2011
    Inventor: Kuang-Neng YANG
  • Publication number: 20110189192
    Abstract: Disclosed are the ERK inhibitors of formula 1.0: and the pharmaceutically acceptable salts, and solvates thereof. Q is a tetrahydropyridinyl ring. All other substitutents are as defined herein. Also disclosed are methods of treating cancer using the compounds of formula 1.0.
    Type: Application
    Filed: February 19, 2009
    Publication date: August 4, 2011
    Inventors: Alan B. Cooper, Yang Nan, Yongqi Deng, Gerald W. Shipps, JR., Neng-Yang Shih, Hugh Y. Zhu, Joseph M. Kelly, Subrahmanyam Gudipati, Ronald J. Doll, Mehul F. Patel, Jagdish A. Desai, James J-S Wang, Sunil Paliwal, Hon-Chung Tsui, Sobhana Babu Boga, Abdul-Basit Alhassan, Xiaolei Gao, Liang Zhu, Xin Yao
  • Patent number: 7985748
    Abstract: In its many embodiments, the present invention relates to a novel class of phenylmorpholine and phenylthiomorpholine compounds useful as ?2C adrenergic receptor agonists, pharmaceutical compositions containing the compounds, and methods of treatment, prevention, inhibition, or amelioration of one or more diseases associated with the ?2C adrenergic receptor agonists using such compounds or pharmaceutical compositions.
    Type: Grant
    Filed: March 12, 2010
    Date of Patent: July 26, 2011
    Assignees: Pharmacopeia Drug Discovery, Inc., Scheeing Corporation
    Inventors: Kevin D. McCormick, Christopher W. Boyce, Neng-Yang Shih, Robert G. Aslanian, Pietro Mangiaracina, Manuel de Lera Ruiz, Younong Yu, Purakkattle Biju, Chia-Yu Huang, Bo Liang, Ruiyan Liu, Rong-Qiang Liu, Lisa Guise-Zawacki
  • Publication number: 20110171773
    Abstract: Disclosed is a method for making a silicon quantum dot planar concentrating solar cell. At first, silicon nitride or silicon oxide mixed with silicon quantum dots is provided on a transparent substrate. By piling, there is formed a planar optical waveguide for concentrating sunlit into a small dot cast on a small solar cell.
    Type: Application
    Filed: January 13, 2010
    Publication date: July 14, 2011
    Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventor: Tsun Neng Yang
  • Patent number: 7972942
    Abstract: Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through heat treating diffusion, the epitaxial Si film is used to form sink positions for the metal impurities in the UMG Si wafer. By using concentration gradient, temperature gradient and interface defect, individual and comprehensive effects are built for enhancing purity of the UMG Si wafer from 5N to 6N. Thus, a low-cost Si wafer can be fabricated for Si-based solar cell through a simple, fast and effective method.
    Type: Grant
    Filed: September 22, 2010
    Date of Patent: July 5, 2011
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventor: Tsun-Neng Yang
  • Patent number: 7960292
    Abstract: A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.
    Type: Grant
    Filed: May 2, 2009
    Date of Patent: June 14, 2011
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventor: Tsun-Neng Yang
  • Patent number: 7951633
    Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.
    Type: Grant
    Filed: September 16, 2009
    Date of Patent: May 31, 2011
    Assignee: Epistar Corporation
    Inventor: Kuang-Neng Yang
  • Patent number: 7951638
    Abstract: A method is disclosed for making a textured surface on a solar cell. At first, there is provided a solar cell with a P-type layer and an N-type layer. Then, a silicon quantum dot-silicon nitride film is provided on the solar cell by chemical vapor deposition. Then, the silicon quantum dot-silicon nitride film is etched. In a first phase, the etching of the silicon nitride is faster than that of the silicon quantum dots so that the silicon quantum dots are exposed, thus forming a transient textured surface on the silicon quantum dot-silicon nitride film. In a second phase, the etching of the silicon nitride is slower than that of the silicon quantum dots so that some of the silicon quantum dots are removed, thus leaving cavities in the silicon quantum dot-silicon nitride film, i.e., forming a final textured surface on the silicon quantum dot-silicon nitride film.
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: May 31, 2011
    Assignee: Atomic Energy Council-Institute of Nuclear Research
    Inventor: Tsun Neng Yang
  • Publication number: 20110104110
    Abstract: The present invention relates to Substituted Indole Derivatives, compositions comprising at least one Substituted Indole Derivative, and methods of using these Substituted Indole Derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.
    Type: Application
    Filed: August 27, 2008
    Publication date: May 5, 2011
    Inventors: Gopinadhan N. Anikumar, Frank Bennett, Tin-Yau Chan, Kevin X. Chen, Mousumi Sannigrahi, Francisco Velazquez, Srikanth Venkatraman, Qingbei Zeng, Jose S. Duca, Charles A. Lesburg, Joseph A. Kozlowski, F. George Njoroge, Stuart B. Rosenblum, Neng-Yang Shih
  • Publication number: 20110098468
    Abstract: A NK1 antagonist having the formula (I), wherein Ar1 and Ar2 are optionally substituted phenyl or heteroaryl, X1 is an ether, thio or imino linkage, R4 and R5 are not both H or alkyl, and the remaining variables are as defined in the specification, useful for treating a number of disorders, including emesis, depression, anxiety and cough. Pharmaceutical compositions. Methods of treatment and combinations with other agents are also disclosed.
    Type: Application
    Filed: December 14, 2010
    Publication date: April 28, 2011
    Applicant: OPKO Health, Inc.
    Inventors: Sunil Paliwal, Gregory A. Reichard, Cheng Wang, Dong Xiao, Hon-Chung Tsui, Neng-Yang Shih, Juan D. Arredondo, Michelle Laci Wrobleski, Anandan Palani
  • Patent number: 7915068
    Abstract: There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: March 29, 2011
    Assignee: Atomic Energy Council—Institute of Nuclear Energy Research
    Inventors: Meng-Chu Chen, Shan-Ming Lan, Tsun-Neng Yang, Zhen-Yu Li, Yu-Han Su, Chien-Te Ku, Yu-Hsiang Huang
  • Patent number: 7902366
    Abstract: A NK1 antagonist having the formula (I), wherein Ar1 and Ar2 are optionally substituted phenyl or heteroaryl, X1 is an ether, thio or imino linkage, R4 and R5 are not both H or alkyl, and the remaining variables are as defined in the specification, useful for treating a number of disorders, including emesis, depression, anxiety and cough. Pharmaceutical compositions. Methods of treatment and combinations with other agents are also disclosed.
    Type: Grant
    Filed: February 21, 2006
    Date of Patent: March 8, 2011
    Assignee: OPKO Health, Inc.
    Inventors: Sunil Paliwal, Gregory A. Reichard, Cheng Wang, Dong Xiao, Hon-Chung Tsui, Neng-Yang Shih, Juan D. Arredondo, Michelle Laci Wrobleski, Anandan Palani
  • Patent number: 7902199
    Abstract: The present application discloses a compound, or enantiomers, stereoisomers, rotamers, tautomers, racemates or prodrug of said compound, or pharmaceutically acceptable salts, solvates or esters of said compound, or of said prodrug, said compound having the general structure shown in Formula 1: or a pharmaceutically acceptable salt, solvate or ester thereof. Also disclosed is a method of treating chemokine mediated diseases, such as, palliative therapy, curative therapy, prophylactic therapy of certain diseases and conditions such as inflammatory diseases (non-limiting example(s) include, psoriasis), autoimmune diseases (non-limiting example(s) include, rheumatoid arthritis, multiple sclerosis), graft rejection (non-limiting example(s) include, allograft rejection, zenograft rejection), infectious diseases (e.g., tuberculoid leprosy), fixed drug eruptions, cutaneous delayed-type hypersensitivity responses, ophthalmic inflammation, type I diabetes, viral meningitis and tumors using a compound of Formula 1.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: March 8, 2011
    Assignees: Schering Corporation, Pharmacopeia, Inc.
    Inventors: Stuart B. Rosenblum, Joseph A. Kozlowski, Neng-Yang Shih, Brian F. McGuinness, Douglas W. Hobbs
  • Patent number: 7896723
    Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: March 1, 2011
    Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
    Inventors: Tsun-Neng Yang, Shan-Ming Lan, Chin-Chen Chiang, Wei-Yang Ma, Chien-Te Ku
  • Patent number: 7892953
    Abstract: A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surface field layer on the titanium-based film, the step of providing a p?-type light-soaking layer on the p+-type back surface field layer and the step of conducting n+-type diffusive deposition of phosphine on the p?-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n+-type emitter on the p?-type light-soaking layer.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: February 22, 2011
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Tsun-Neng Yang, Shan-Ming Lan, Chin-Chen Chiang, Wei-Yang Ma, Chien-Te Ku, Yu-Hsiang Huang
  • Publication number: 20110038876
    Abstract: Disclosed are the ERK inhibitors of formula 1.0: [Formula (1.0)] and the pharmaceutically acceptable salts, esters and solvates thereof. Q is a piperidine or piperazine ring that can have a bridge or a fused ring. The piperidine ring can have a double bond in the ring. All other substitutents are as defined herein. Also disclosed are methods of treating cancer using the compounds of formula 1.0.
    Type: Application
    Filed: June 17, 2008
    Publication date: February 17, 2011
    Inventors: Robert Sun, Alan B. Cooper, Yongqi Deng, Tong Wang, Yang Nan, Hugh Y. Zhu, Sobhana Babu Boga, Xiaolei Gao, Joseph M. Kelly, Sunil Paliwal, Hon-Chung Tsui, Ronald J. Doll, Neng-Yang Shih
  • Publication number: 20110033417
    Abstract: The present invention relates to 2,3-Substituted Indole Derivatives, compositions comprising at least one 2,3-Substituted Indole Derivative, and methods of using the 2,3-Substituted Indole Derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.
    Type: Application
    Filed: August 27, 2008
    Publication date: February 10, 2011
    Inventors: Gopinadhan N. Anilkumar, Frank Bennett, Tin-Yau Chan, Kevin X. Chen, Mousumi Sannigrahi, Francisco Velazquez, Srikanth Venkatraman, Qingbei Zeng, Jose S. Duca, Charles A. Lesburg, Joseph A. Kozlowski, F. George Njoroge, Stuart B. Rosenblum, Neng-Yang Shih, Stephen J. Gavalas, Yueheng Jiang, Patrick A. Pinto, Haiyan Pu, Oleg B. Selyutin, Bancha Vibulbhan, Li Wang, Wanli Wu, Weiying Yang, Yuhua Huang, Hsueh-Cheng Huang, Robert Palermo, Boris Feld
  • Patent number: 7883387
    Abstract: In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.
    Type: Grant
    Filed: September 11, 2007
    Date of Patent: February 8, 2011
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Tsun-Neng Yang, Shan-Ming Lan, Chin-Chen Chiang, Wei-Yang Ma, Chien-Te Ku
  • Publication number: 20110027935
    Abstract: In a method for making a full-spectrum solar cell, there is provided an ordinary solar cell with an anti-reflection layer. The anti-reflection layer is coated with a film of silicon nitride and/or silicon oxide. The silicon/nitrogen ratio and/or the silicon/oxygen ratio and the temperature are regulated, thus forming a silicon-rich film via doping the anti-reflection layer with silicon from the film of silicon nitride and/or silicon oxide. The precipitation of the silicon in the silicon-rich film is executed based on a mechanism of phase separation, thus forming silicon quantum dots of various sizes in the anti-reflection layer.
    Type: Application
    Filed: March 14, 2008
    Publication date: February 3, 2011
    Applicant: ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
    Inventor: Tsun-Neng Yang