Abstract: There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

Abstract: The present application discloses a compound, or enantiomers, stereoisomers, rotamers, tautomers, racemates or prodrug of said compound, or pharmaceutically acceptable salts or solvates of said compound, or of said prodrug, said compound having the general structure shown in Formula 1: and the pharmaceutically acceptable salts, solvates or esters thereof. Also disclosed is a method of treating chemokine mediated diseases, such as, palliative therapy, curative therapy, prophylactic therapy of certain diseases and conditions such as inflammatory diseases (non-limiting example(s) include, psoriasis), autoimmune diseases (non-limiting example(s) include, rheumatoid arthritis, multiple sclerosis), graft rejection (non-limiting example(s) include, allograft rejection, xenograft rejection), infectious diseases (e.g, tuberculoid leprosy), fixed drug eruptions, cutaneous delayed-type hypersensitivity responses, ophthalmic inflammation, type I diabetes, viral meningitis and tumors using a compound of Formula 1.

Abstract: This invention relates to compounds of the Formula (I): or a pharmaceutically acceptable salt, solvate, ester or isomer thereof, which can be useful for the treatment of diseases or conditions mediated by MMPs, ADAMs, TACE, aggrecanase, TNF- or combinations thereof.

Abstract: The present application discloses a compound, or enantiomers, stereoisomers, rotamers, tautomers, racemates or prodrug of said compound, or pharmaceutically acceptable salts, solvates or esters of said compound, or of said prodrug, said compound having the general structure shown in Formula 1: and the pharmaceutically acceptable salts, solvates and esters thereof. Also disclosed is a method of treating chemokine mediated diseases, such as, palliative therapy, curative therapy, prophylactic therapy of certain diseases and conditions such as inflammatory diseases (non-limiting example(s) include, psoriasis), autoimmune diseases (non-limiting example(s) include, rheumatoid arthritis, multiple sclerosis), graft rejection (non-limiting example(s) include, allograft rejection, xenograft rejection), infectious diseases (e.

Abstract: Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p? type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p? type light-soaking film to form an n+ type emitter. Thus, an n+-p?-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p?-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p?-p+ laminate is etched in a patterned mask process. A p? type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n? type ohmic contact is formed on the n+ type emitter.

Abstract: Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p? type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p? type light-soaking film to form an n+ type emitter. Thus, an n+-p?-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p?-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p?-p+ laminate is etched in a patterned mask process. A p? type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n? type ohmic contact is formed on the n+ type emitter.

Abstract: A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p? type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p? type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

Abstract: The present invention relates to 5,6-ring annulated indole derivatives of the formula (I), compositions comprising at least one 5,6-ring annulated indole derivatives, and methods of using the 5,6-ring annulated indole derivatives for treating or preventing a viral infection or a virus-related disorder in a patient.

Abstract: A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n+-p?-p+ laminate on the titanium-based layer, passivating the n+-p?-p+ laminate, providing an n-i-p laminate on the n+-p?-p+ laminate, providing a p-type ohmic contact, providing an n-type ohmic contact providing an anti-reflection layer of SiCN/SiO2 on the n-i-p laminate.

Abstract: Disclosed are novel compounds of the formula or a pharmaceutically acceptable salt thereof, wherein: M1 and M3 are CH or N; M2 is CH, CF or N; Y is —C(?O)—, —C(?S)—, —(CH2)q—, —C(?NOR7)— or —SO1-2—; Z is a bond or optionally substituted alkylene or alkenylene; R1 is H, or alkyl, cycloalkyl, aryl, heteroaryl, heterocycloalkyl, all optionally substituted, or a group of the formula: where ring A is a heteroaryl ring; R2 is optionally substituted alkyl, alkenyl, aryl, heteroaryl, cycloalkyl or heterocycloalkyl; R3 is H, —C(O)NH2, or alkyl, aryl, cycloalkyl, heterocycloalkyl or heteroaryl, all optionally substituted; and the remaining variables are as defined in the specification; compositions and methods of treating allergy-induced airway responses, congestion, obesity, metabolic syndrome, alcoholic fatty liver disease, hepatic steatosis, nonalcoholic steatohepatitis, cirrhosis, hepatacellular carcinoma and cognition deficit disorders using said compounds, alone or in combination with othe

Abstract: A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Abstract: A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to the substrate. Thus, the ZnO film is fit for ultraviolet light-emitting diodes (UV LED), solar cells and related laser devices.

Abstract: There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles.

Abstract: Upgraded metallurgical grade silicon (UMG-Si) is fabricated by a ‘green’ (environmental protected) external gettering procedure. Impurities concentration of the fabricated UMG-Si is reduced for 100 times than its source material. The UMG-Si obtained has a purity ratio reaching 4N to 6N. Thus, substrates made of the UMG-Si can be used in solar cells and related photoelectrical applications.

Abstract: A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p? type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p? type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

Abstract: A high-quality epitaxial silicon thin layer is formed on an upgraded metallurgical grade silicon (UMG-Si) substrate. A thin film interface is fabricated between the UMG-Si substrate and the epitaxial silicon thin layer. The interface is capable of internal light reflection and impurities isolation. With the interface, photoelectrical conversion efficiency is improved. Thus, the present invention is fit to be applied for making solar cell having epitaxial silicon thin layer.

Abstract: The present invention discloses novel compounds which have HCV protease inhibitory activity as well as methods for preparing such compounds. In another embodiment, the invention discloses pharmaceutical compositions comprising such compounds as well as methods of using them to treat disorders associated with the HCV protease.

Abstract: A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surface field layer on the titanium-based film, the step of providing a p?-type light-soaking layer on the p+-type back surface field layer and the step of conducting n+-type diffusive deposition of phosphine on the p?-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n+-type emitter on the p?-type light-soaking layer.

Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

Abstract: Disclosed are the ERK inhibitors of formula 1.0: and the pharmaceutically acceptable salts and solvates thereof. Q is a piperidine or piperazine ring that can have a bridge or a fused ring. The piperidine ring can have a double bond in the ring. All other substituents are as defined herein. Also disclosed are methods of treating cancer using the compounds of formula 1.0.