Abstract: Various implementations disclosed herein include devices, systems, and methods that provide a device with a portal associated with enabling mirroring and control functionality of a head mounted device (HMD). For example, a process may pair an electronic device with a head mounted device (HMD) such that communications are established between the electronic device and the HMD. The process may further provide mirroring functionality such that content rendered on a display of the HMD is additionally rendered on a display of the electronic device. In response to providing the mirroring functionality, the process may further enable the electronic device to control a specified functionality of the HMD.

Abstract: A detector circuit having a current conversion mechanism for a power converter is provided. An output terminal of the power converter is connected to a first terminal of an inductor. The detector circuit detects a current flowing through the inductor as a detected current, and converts the detected current into a detected voltage. The detector circuit compares the detected voltage with a reference voltage to generate a comparison signal. Each time when a level of the comparison signal reaches a reference level, the detector circuit counts a count value.

Abstract: A system may include a first network device. The first network device may include a first processor configured to: obtain a copy of a first message sent from an application on a User Equipment device (UE); construct a signature based on the copy of the first message; and send a second message including the signature to a second network device. The second message may request the second network device to either train a classification model or to provide a device type of the UE or an application type of the application to the first network device.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.

Abstract: The present disclosure provides compounds useful for the inhibition of KRAS G12D, G12V, G12A, G12S, G13D, Q61H, Q61L or G12C. The compounds have a general Formula I?: wherein the variables of Formula I? are defined herein. This disclosure also provides pharmaceutical compositions comprising the compounds, uses of the compounds, and compositions for treatment of, for example, cancer.

Abstract: The present invention relates the field of animal health. Particularly, the present invention relates to a recombinant classical swine fever virus E2 protein in which a fragment comprising at least one of the amino acids defining the 6B8 epitope of the CSFV E2 protein is replaced by a corresponding fragment of the E2 protein from a pestivirus other than CSFV. Further, the present invention provides an immunogenic composition comprising the recombinant E2 protein of the present invention and the use of the immunogenic composition for preventing and/or treating diseases associated with CSFV in an animal. Moreover, the present invention provides a method and a kit for differentiating animals infected with CSFV from animals vaccinated with the immunogenic composition of the present invention.

Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Abstract: A switching charger for accurately sensing a small current is provided. First terminals of first transistors and a second transistor are coupled to a system voltage. Second terminals of the first transistors and a first input terminal of an operational amplifier are connected to a battery. A first terminal of a third transistor is connected to a second terminal of the second transistor and a second input terminal of the operational amplifier. A control terminal of the third transistor is connected to an output terminal of the operational amplifier. A first terminal of a fourth transistor is connected to a second terminal of the third transistor. First terminals of fifth transistors are coupled to an input voltage. Control terminals of the first transistors and the fifth transistors are connected to a control circuit. First terminals of sixth transistors are respectively connected to second terminals of the fifth transistors.

Abstract: The present invention discloses an intelligent internet of things integrated perception system and method thereof, the integrated perception system comprises a data perception layer (1); a connection and transmission layer (2); an edge computation layer (3); a cloud computation layer (4); an application layer (5). The data perception layer (1) is composed of a plurality of sensor device nodes, and transmits the monitored environmental data to the edge computation layer (3) through the connection and transmission layer (2); the cloud computation layer (4) performs data fusion according to data provided by each edge computation device, and forms action instructions for the plurality of application devices.

Abstract: A method includes performing a first etching process on a backside of a substrate to expose a dummy contact structure, performing a first deposition process to deposit a first portion of an oxide layer around the dummy contact structure, performing a second etching process to at least partially remove the first portion of oxide layer, forming a spacer layer around the dummy contact structure, performing a second deposition process to form a second portion of the oxide layer around the spacer layer, removing the spacer layer and the dummy contract structure to leave an opening, and filling the opening with a conductive material to form a conductive plug.

Abstract: This application provides an electrode assembly, a secondary battery, and an electric apparatus, considering the changing of NP value of the electrode assembly with the increasing of the number of cycles or storage days. The application considers the design of the NP value corresponding to a current capacity retention rate of not less than m. For a storage proportion ranging 0.5-0.8, an upper limit of NP decreases as the storage proportion increases, so a smaller NP value can be designed. This is conducive to reducing the total amount of negative electrode material and maximizing the reuse of the non-decayed lithium intercalation and deintercalation capacity of a silicon-doped negative electrode, thus achieving low cost.

Abstract: This application provides an electrode assembly, a secondary battery, and an electric apparatus. Considering that a corresponding NP value of the electrode assembly varies with an increase in the number of cycles or storage days, this application considers the design of the NP value corresponding to the electrode assembly with a current capacity retention rate of not less than m. The NP can be designed to take different values for different weight percentages of the silicon-containing active material of a negative electrode plate.

Abstract: A power converter having a current limit protection mechanism is provided. An error amplifier of the power converter multiples a difference between (a divided voltage of) an output voltage of the power converter and a reference voltage by a gain to output an error amplified signal. A comparator of the power converter compares the error amplified signal with a ramp signal to output an on-time signal. A current limiting circuit of the power converter detects data related to a high-side switch and a low-side switch of the power converter. The current limiting circuit of the power converter compares working periods and non-working periods of the on-time signal with blanking times to output a current limiting signal. A control circuit of the power converter, according to the current limiting signal, determines whether to control the high-side switch and the low-side switch according to the detected data.

Abstract: The present disclosure provides compounds useful for the inhibition of KRAS G12D, G12V, G12A, G12S or G12C. The compounds have a general Formula (I): (Formula (I)) wherein the variables of Formula (I) are defined herein. This disclosure also provides pharmaceutical compositions comprising the compounds, uses of the compounds, and compositions for treatment of, for example, cancer.

Abstract: A low-dropout regulator having an output voltage switching circuit is provided. In the low-dropout regulator, a low-dropout linear regulator circuit outputs a regulating signal according to a voltage difference between a second terminal of a transistor and a regulating threshold voltage signal or a reference voltage. In the low-dropout regulator, a switch error amplifier circuit outputs a pull-up control signal according to a voltage difference between the second terminal of the transistor and a voltage pull-up switching signal. When a voltage selector circuit of the low-dropout regulator selects the regulating signal, the transistor operates to regulate an output voltage of the low-dropout regulator according to the regulating signal. When the voltage selector circuit selects the pull-up control signal, a switch component is turned on by the pull-up control signal such that the output voltage of the low-dropout regulator is directly pulled up by an input voltage.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A memory sub-system periodically performs a first wear leveling operation using a direct mapping function on a data management unit of a memory component in the memory sub-system at a first frequency. The memory sub-system further periodically performs a second wear leveling operation using indirect mapping on a group of data management units of the memory component at a second frequency, wherein the second wear leveling operation is performed less frequently than the first wear leveling operation.