Patents by Inventor Ning Chen

Ning Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250119960
    Abstract: A hotspot communication stabilization system includes a hotspot communication stabilizer. The hotspot communication stabilizer includes a connected device address search unit and a comparator. The connected device address search unit serves to obtain at least one connection address from a communication host device at regular or irregular intervals. The connection address is an address of a peripheral communication device connected to the communication host device and is stored in a connection address table. The comparator serves to determine whether there is a missing address in the connection address table at a current time by comparing two connection addresses of the peripheral communication device at two adjacent times. The missing address is sent to the communication host device and the communication host device re-establishes a hotspot signal connection to the missing address corresponded to a corresponding peripheral communication device.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 10, 2025
    Inventors: YAO CHING WANG, YI CHIEH CHEN, YU NING LAN
  • Publication number: 20250120115
    Abstract: A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate structure disposed over and interleaved with the stack of semiconductor layers, the metal gate structure including a gate electrode disposed over a gate dielectric layer, a first isolation structure disposed adjacent to a first sidewall of the stack of semiconductor layers, where the gate dielectric layer fills space between the first isolation structure and the first sidewall of the stack of semiconductor layers, and a second isolation structure disposed adjacent to a second sidewall of the stack of semiconductor layers, where the gate electrode fills the space between the second isolation structure and the second sidewall of the stack of semiconductor layers.
    Type: Application
    Filed: December 16, 2024
    Publication date: April 10, 2025
    Inventors: Shi Ning Ju, Kuo-Cheng Chiang, Guan-Lin Chen, Chih-Hao Wang, Kuan-Lun Cheng
  • Publication number: 20250119338
    Abstract: An operation and maintenance method and system for automatically and uniformly managing nodes of bastion host can be abstracted as follows: master control dispatches a Master of a certain area node to issue and execute a certain task, and unified management is naturally achieved; the design concept can be continued subsequently. A Master host in the node serves as a master controller of the node, and related contents including a tool script library, a crontab task and a configuration file are preset in a Redis of the node in advance; when a new machine is accessed to a certain node, the new machine performs Salt-Master access management of the node where the new machine is located, and the corresponding machine is controlled to complete the corresponding task through a takeover program; therefore, unified and automatic management is realized.
    Type: Application
    Filed: September 5, 2023
    Publication date: April 10, 2025
    Applicant: Hangzhou PingPong Intelligence Technology Co., Ltd.
    Inventors: Xiaohui JIA, Peng CHEN, Zhehui ZHAO, Yu CHEN, Ning WANG, Shuai LU
  • Patent number: 12274066
    Abstract: In certain aspects, a memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured to control the array of memory cells. A first peripheral circuit of the plurality of peripheral circuits includes a first three-dimensional (3D) transistor coupled to the array of memory cells through at least one of the plurality of bit lines. The first 3D transistor includes a 3D semiconductor body, and a gate structure in contact with a plurality of sides of the 3D semiconductor body. The gate structure includes a gate dielectric and a gate electrode.
    Type: Grant
    Filed: September 22, 2021
    Date of Patent: April 8, 2025
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Chao Sun, Liang Chen, Wu Tian, Wenshan Xu, Wei Liu, Ning Jiang, Lei Xue
  • Patent number: 12272732
    Abstract: The present disclosure provides a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. The present disclosure also includes forming a trench between neighboring source/drain features to remove bridging between the neighboring source/drain features. In some embodiments, the trenches between the source/drain features are formed by etching from the backside of the substrate.
    Type: Grant
    Filed: June 16, 2023
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Chien Ning Yao, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 12272690
    Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.
    Type: Grant
    Filed: March 27, 2023
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shi Ning Ju, Zhi-Chang Lin, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Kuan-Ting Pan
  • Patent number: 12272295
    Abstract: Provided is a pixel circuit. The pixel circuit includes a data writing circuit, a light-emission adjusting circuit, a light-emission control circuit, and a light-emission driving circuit; wherein the data writing circuit is coupled to a gate signal terminal, a first data signal terminal and a first node; the light-emission adjusting circuit is coupled to a target signal terminal, the first node and a second node; the light-emission control circuit is coupled to the second node, a reference signal terminal, a light-emission control signal terminal and a third node; the light-emission driving circuit is coupled to the third node, the gate signal terminal, a first power supply terminal, a second data signal terminal and a light-emitting element.
    Type: Grant
    Filed: June 8, 2021
    Date of Patent: April 8, 2025
    Assignees: Beijing BOE Display Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Ning Cong, Minghua Xuan, Can Zhang, Xiaochuan Chen, Lijun Yuan, Qi Qi, Can Wang, Jinfei Niu
  • Patent number: 12268778
    Abstract: A bifunctional nucleoside hydrogel is formed by dissolving isoguanosine, guanosine and a borate in water or an aqueous solution and then crosslinking same. The bifunctional nucleoside hydrogel integrates a carrier and a drug effect and has a significant inhibitory effect on the activity of tumor cells, and in particular has a significant inhibitory effect on the activity of cells related to lung cancer, glioma, osteoma, colon cancer, breast cancer, oral squamous cell carcinoma and tongue squamous cell carcinoma, of which the inhibitory effect on the activity of cells related to oral squamous cell carcinoma is the best. Therefore, the bifunctional nucleoside hydrogel has potential application prospects in preparing anti-tumor drugs, and particularly, same can provide a new approach for treating oral squamous cell carcinoma.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: April 8, 2025
    Assignee: SICHUAN UNIVERSITY
    Inventors: Hang Zhao, Xin Zeng, Ning Ji, Hui Feng, Jiang Liu, Qianming Chen
  • Publication number: 20250112460
    Abstract: A power supply includes a conversion circuit, an auxiliary power circuit, and an output control circuit. The conversion circuit converts a DC power into a first output power, and the auxiliary power circuit converts the DC power into a first auxiliary power. The output control circuit is used to selectively connect a first output terminal and a second output terminal so that when the output control circuit disconnects the first output terminal and the second output terminal, the first output power supplies power to a critical load through the first output terminal, and when the output control circuit connects the first output terminal and the second output terminal, the first output power supplies power to the critical load and a non-critical load through the first output terminal and the second output terminal respectively.
    Type: Application
    Filed: September 20, 2024
    Publication date: April 3, 2025
    Inventors: Cheng-Chan HSU, Chien-An LAI, Guo-Ning CHEN, Yung-Yuan HSIAO, Kai-Lin CHANG
  • Publication number: 20250113539
    Abstract: A method includes forming semiconductive sheets over a substrate and arranged in a vertical direction; forming source/drain regions on either side of each of the semiconductive sheets; forming first air gap inner spacers interleaving with the semiconductive sheets; forming a gate around each of the semiconductive sheets, wherein the first air gap inner spacers are laterally between the gate and a first one of the source/drain regions.
    Type: Application
    Filed: October 3, 2023
    Publication date: April 3, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun Yi CHOU, Guan-Lin CHEN, Shi Ning JU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250112471
    Abstract: A power supply equipment supplies power to a critical load and a non-critical load. The power supply equipment includes a plurality of power supplies coupled in parallel and a system controller. The system controller is coupled to the power supplies, and communicates with the power supplies to set a specific sequence. The system controller notifies the power supplies to adjust operating frequencies to be inconsistent according to the specific sequence.
    Type: Application
    Filed: September 20, 2024
    Publication date: April 3, 2025
    Inventors: Chien-An LAI, Guo-Ning CHEN, Yung-Yuan HSIAO
  • Publication number: 20250108402
    Abstract: Disclosed are coating equipment and a coating method. The coating equipment comprises a coating die and a slurry parameter detector. The coating die comprises a first slot, a second slot, a first adjusting mechanism and a second adjusting mechanism. Through the arrangement of the first adjusting mechanism and the second adjusting mechanism, adjustment of the flow rate of slurry circulating in the first slot and the second slot can be realized, and parameters of coated slurry are detected by a slurry parameter detector, and are then compared with preset values, and comparison results are fed back to the first adjusting mechanism and the second adjusting mechanism for adjustment of the first adjusting piece and the second adjusting piece, so that automatic adjustment of double-layer die coating is realized, the debugging effectiveness is greatly improved, and the coating efficiency is further improved.
    Type: Application
    Filed: February 24, 2022
    Publication date: April 3, 2025
    Applicant: SHENZHEN MANST TECHNOLOGY CO., LTD.
    Inventors: Ning LI, Guishan CHEN, Jin CHAI, Zheng LIU
  • Publication number: 20250111328
    Abstract: Systems and methods are described for enabling delivery of an order to a customer's vehicle travelling along a first navigational route. The customer inputs an order, and a plurality of candidate vendors and candidate delivery locations are determined. A target delivery location and target vendor are selected from among the plurality of candidate delivery locations and candidate vendors based on optimizing one or more predetermined criteria. The order is transmitted to the target vendor, and a confirmation is received. The target delivery location is then transmitted to the customer. The customer travels to the target delivery location to pick up the order.
    Type: Application
    Filed: September 28, 2023
    Publication date: April 3, 2025
    Inventors: Ning Xu, Serhad Doken, Aldis Sipolins, Dhananjay Lal, Tao Chen
  • Publication number: 20250112557
    Abstract: A power supply control system for a multi-phase power converter is provided. The power supply control system classifies each of a plurality of power converters into one of a plurality of power groups. The power supply control system selects one of the plurality of power converters classified in each of the plurality of power groups as a master power converter, and selects others of the plurality of power converters in each of the plurality of power groups as slave power converters. The power supply control system, according to data of the master power converter, outputs an on-time controlling signal for controlling an on-time of a high-side switch and an on-time of a low-side switch of each of the plurality of power converters, so as to control the plurality of power converters for supplying appropriate power to electronic devices.
    Type: Application
    Filed: February 21, 2024
    Publication date: April 3, 2025
    Inventor: CHIH-NING CHEN
  • Patent number: 12266704
    Abstract: Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. The methods described herein allow for complex shapes (e.g., “L-shaped”) to be etched into a multi-layered stack to form fins used in the formation of active regions of the GAA nanostructure transistor structures. In some embodiments, the active regions may be formed with a first channel width and a first source/drain region having a first width and a second channel width and a second source/drain region having a second width that is less than the first width.
    Type: Grant
    Filed: May 26, 2023
    Date of Patent: April 1, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shi Ning Ju, Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 12266679
    Abstract: A display substrate and a display device are provided. The display substrate includes light emitting diode chips, each light emitting diode chip includes light emitting units which respectively emit light of different colors, each light emitting unit includes a first electrode, a light emitting layer, a base and a second electrode, and the base and the second electrode are respectively located at both sides of the light emitting layer. In each light emitting diode chip, the light emitting units share the base and the first electrode, the light emitting layers of the light emitting units emit light of the same color, and at least one light emitting unit further includes a first color conversion layer located at a side of the base away from the light emitting layer, so as to convert first color light emitted by the light emitting layer into second color light.
    Type: Grant
    Filed: March 11, 2021
    Date of Patent: April 1, 2025
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Can Wang, Wei Li, Lijun Yuan, Jingjing Zhang, Can Zhang, Jinfei Niu, Ning Cong, Minghua Xuan, Xiaochuan Chen, Xue Dong, Qi Qi
  • Publication number: 20250099458
    Abstract: Provided is a use of nintedanib or a pharmaceutically acceptable salt thereof in preparing a drug for treating tuberculosis. The nintedanib or the pharmaceutically acceptable salt thereof is used in combination with a further anti-tuberculosis drug for treating tuberculosis, or used as an adjuvant drug for the treating tuberculosis, where the further anti-tuberculosis drug is selected from a group consisting of: rifampicin, isoniazid, pyrazinamide, ethambutol, fluoroquinolone, streptomycin, kanamycin, amikacin, capreomycin, sodium para-aminosalicylate, ethionamide, cycloserine, clofazimine, and linezolid.
    Type: Application
    Filed: March 16, 2023
    Publication date: March 27, 2025
    Applicants: Beijing Chest Hospital, Capital Medical University, Beijing Tuberculosis Chest Cancer Institute
    Inventors: Yu LU, Xiaoyou CHEN, Xueting QI, Luyao ZHENG, Lei FU, Weiyan ZHANG, Ning WANG
  • Publication number: 20250105261
    Abstract: A negative electrode active material comprises a carbon-based material and a silicon-based material, wherein a first functional group exists on the surface of the carbon-based material, a second functional group exists on the surface of the silicon-based material, and the first functional group has a charge opposite to that of the second functional group.
    Type: Application
    Filed: December 11, 2024
    Publication date: March 27, 2025
    Inventors: Yaqian Deng, Ning Chen, Ruijing Lv, Zhipeng Cheng, Dongyang Shi, Haizu Jin, Baiqing Li
  • Publication number: 20250105366
    Abstract: The present application provides a battery cell, a preparation method therefor, a secondary battery, and a power consuming device. The battery cell is formed by winding a negative electrode plate, a positive electrode plate, and a separator positioned between the negative electrode plate and the positive electrode plate, wherein the negative electrode plate has a negative electrode curved surface area, and the positive electrode plate has a positive electrode curved surface area; and at least one curved surface area group composed of the negative electrode curved surface area and the positive electrode curved surface area positioned outside and adjacent to the negative electrode curved surface area is included at a corner of the battery cell.
    Type: Application
    Filed: December 10, 2024
    Publication date: March 27, 2025
    Inventors: Zhipeng Cheng, Yaqian Deng, Zhi Liu, Ruijing Lv, Ning Chen, Haizu Jin, Baiqing Li
  • Publication number: 20250105365
    Abstract: The present application provides an electrode assembly and a preparation method therefor, a secondary battery, and a power consuming device. A reserved space is formed between at least one surface of a separator and a corresponding electrode plate, and a spacing D of the reserved space tends to increase in a preset direction of the electrode plate from either edge of the separator to a middle of the separator, so that the reserved space is of a structure with a large middle and two small ends. In this way, during cycle of charging and discharging, when the electrode plate expands at a middle part more than at two edges thereof in its own width direction, the electrode plate is better accommodated in the reserved space.
    Type: Application
    Filed: December 9, 2024
    Publication date: March 27, 2025
    Inventors: Yaqian Deng, Ning Chen, Dongyang Shi, Zhipeng Cheng, Yuzhen Wang, Haizu Jin, Baiqing Li