Abstract: Thiazole-lactam-spiroheterocyclic compounds and applications thereof in the preparation of drugs for treating related diseases. Specifically disclosed are a compound as represented by formula (I) and pharmaceutically acceptable salts thereof.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a first base portion and a second base portion, an isolation feature sandwiched between the first base portion and the second base portion, a center dielectric fin over the isolation feature, a first anti-punch-through (APT) feature over the first base portion, a second APT feature over the second base portion, a first stack of channel members over the first APT feature, and a second stack of channel members over the second APT feature. The center dielectric fin is sandwiched between the first stack of channel members and the second stack of channel members as well as between the first APT feature and the second APT feature.

Abstract: The present disclosure pertains to compositions comprising anti-VEGF proteins and methods for producing such compositions.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming a channel structure over a substrate and forming a protective spacer over sidewalls of the channel structure. The method also includes forming an insulating wall adjacent to an end of the channel structure. The method further includes removing the protective spacer to expose the channel structure. In addition, the method includes forming a metal gate stack surrounding an intermediate portion of the channel structure.

Abstract: Methods and devices are provided for video coding. In the method, a decoder may receive a picture frame including one or more components, where the one or more components include a first component and a second component. The decoder determines a classifier for a respective sample of the second component according to a collocated sample of the first component; obtains an indicator that indicates one or more bandNum segments of the one or more components in response to determining that the classifier is a band classifier or a joint classifier encompassing the band classifier; determines, according to the indicator and from a mapping table, the one or more bandNum segments and determining a band offset according to the one or more bandNum segments; and modifies the respective sample of the second component according to a sample offset including the band offset.

Abstract: A method of video decoding, apparatuses and non-transitory computer-readable storage media thereof are provided. The method of video decoding includes obtaining a first parameter based on a first neighbor block of a current block; obtaining a second parameter based on the first neighbor block and/or a second neighbor block of the current block; constructing an affine model using the first parameter and the second parameter; and obtaining a control point motion vector (CPMV) for the current block based on the affine model. The first neighbor block and the second neighbor block are obtained from a plurality of neighbor blocks to the current block based on at least one scanning area and at least one scanning distance. The first neighbor block and the second neighbor block are obtained by scanning the at least one scanning area at the at least one scanning distance.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first nanowire over a semiconductor fin. The semiconductor structure also includes a second nanowire over the first nanowire and a third nanowire over the second nanowire. The semiconductor structure further includes a source/drain wrapping around the first nanowire, the second nanowire and the third nanowire. A thickness of a first portion of the source/drain vertically sandwiched between the first nanowire and the second nanowire is different from a thickness of a second portion of the source/drain vertically sandwiched between the second nanowire and the third nanowire.

Abstract: Gate cutting techniques disclosed herein form gate isolation fins to isolate metal gates of multigate devices from one another before forming the multigate devices, and in particular, before forming the metal gates of the multigate devices. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A gate isolation fin, which separates the first metal gate and the second metal gate, includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is less than the first dielectric constant. A gate isolation end cap may be disposed on the gate isolation fin to provide additional isolation.

Abstract: A monitoring system based on a digital converter station includes a first monitoring terminal deployed at a first-level monitoring side, a second monitoring terminal deployed at a second-level monitoring side, and a third monitoring terminal deployed at a third-level monitoring side; the monitoring terminal at each level includes a communication module, a human-machine interaction module, a device status monitoring module, a device alarm management module, a video fusion processing module, and a data transmission adjustment and control module.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The method includes forming a polysilicon structure on a substrate, depositing a first spacer layer on the polysilicon structure, depositing a second spacer layer on the first spacer layer, forming a S/D region on the substrate, removing the second spacer layer, depositing a third spacer layer on the first spacer layer and on the S/D region, depositing an ESL on the third spacer layer, depositing an ILD layer on the etch stop layer, and replacing the polysilicon structure with a gate structure surrounding the nanostructured layer.

Abstract: A method of video decoding, a method of video encoding, apparatuses and non-transitory computer-readable storage media thereof are provided. The method of video decoding includes obtaining one or more constructed motion vector (MV) candidates from a plurality of non-adjacent neighbor blocks to a current block by jointly or independently scanning a plurality of scanning areas at one or more scanning distances, where one scanning distance indicates a number of blocks away from one side of the current block. Furthermore, the method may include obtaining one or more control point motion vectors (CPMVs) for the current block based on the one or more constructed MV candidates.

Abstract: Provided are a dimethyl-substituted thiazololactam compound and the use thereof in the preparation of a drug for treating relevant diseases. Specifically, provided are a compound as represented by formula (I) and a pharmaceutically acceptable salt thereof.

Abstract: Provided herein are KRAS G12C inhibitors, such as composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.

Abstract: Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.

Abstract: The present disclosure pertains to compositions comprising anti-VEGF proteins and methods for producing such compositions.

Abstract: Provided are a pixel circuit and a driving method therefor, a display substrate, and a display apparatus, which belong to the technical field of display. In the pixel circuit, a light-emission adjusting circuit can adjust a data signal written by a data write circuit into a first node and can adjust the potential of a second node according to the potential of the first node; and a light-emission control circuit can output a reference signal to a third node under the control of the potential of the second node. Furthermore, a light emission driving circuit needs to output a drive signal to a light-emitting element in response to the potential of the third node, so as to drive the light-emitting element to emit light.

Abstract: A method for Cross-Component Sample Adaptive Offset (CCSAO) process is provided. The method comprises: determining a first rate-distortion (RD) cost for a block using a first classifier, wherein the first classifier having a first category number in a first value range, and wherein the first RD cost is the least among RD costs associated with classifiers having a category number in the first value range; determining a second RD cost for the block using a second classifier, wherein the second classifier having a second category number in a second value range, and wherein the second RD cost is the least among RD costs associated with classifiers having a category number in the second value range; and applying the first classifier as a classifier for the CCSAO process in response to determining the first RD cost is less than the second RD cost.

Abstract: The present disclosure provides compounds useful for the inhibition of KRAS G12D, G12V, G12A, G12S, G13D, Q61H, Q61L or G12C. The compounds have a general Formula I?: wherein the variables of Formula I? are defined herein. This disclosure also provides pharmaceutical compositions comprising the compounds, uses of the compounds, and compositions for treatment of, for example, cancer.

Abstract: An array baseplate and a preparation method thereof, and a display device. The array baseplate includes: a substrate; a drive unit disposed on one side of the substrate; and a light-emitting unit including at least one light-emitting subunit and disposed on a side of the substrate away from the drive unit, wherein the light-emitting unit is electrically connected to the drive unit through a wiring penetrating the substrate, and at least part area of each light-emitting subunit is in direct contact with the substrate. The light-emitting unit and the drive unit in the array baseplate are located on two sides of the substrate, and at least part area of the light-emitting subunit is in direct contact with the substrate.