Patents by Inventor Ning Chen

Ning Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230324267
    Abstract: Disclosed herein is a device for reducing the volume of an aquatic sample, comprising, a substrate; a metal layer disposed above the substrate; a hydrophobic layer disposed above the metal layer having a plurality of assay wells formed therein; and a hydrophilic layer coated on each of the plurality of assay wells. Also encompassed in the present disclosure are a kit comprising the device and a lipoplex containing a liposome and a fluorescence-labeled molecular beacon inside the liposome, and use of the kit in detecting a target nucleic acid in a biological sample.
    Type: Application
    Filed: April 8, 2022
    Publication date: October 12, 2023
    Inventors: Cheng-An LIN, Rui-Hong HONG, Chih-Chueh LU, Yi-Ning CHEN
  • Patent number: 11766436
    Abstract: Provided herein are KRAS G12C inhibitors, composition of the same, and methods of using the same. These inhibitors are useful for treating a number of disorders, including pancreatic, colorectal, and lung cancers.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: September 26, 2023
    Assignee: Amgen Inc.
    Inventors: John Gordon Allen, Jennifer Rebecca Allen, Ana Elena Minatti, Qiufen Xue, Ryan Paul Wurz, Christopher M. Tegley, Alexander J. Pickrell, Thomas T. Nguyen, Vu Van Ma, Patricia Lopez, Longbin Liu, David John Kopecky, Michael J. Frohn, Ning Chen, Jian Jeffrey Chen, Aaron C. Siegmund, Albert Amegadzie, Nuria A. Tamayo, Shon Booker, Clifford Goodman, Mary Walton, Nobuko Nishimura, Youngsook Shin, Jonathan D. Low, Victor J. Cee, Anthony B. Reed, Hui-Ling Wang, Brian Alan Lanman
  • Publication number: 20230297155
    Abstract: A power saving system of a battery charger is provided. A control terminal of a first transistor receives a wake-up signal. A counter is connected to a first terminal of the first transistor. The counter determines whether or not a working period of the wake-up signal from the first transistor is larger than a time threshold to output a counting signal. When the counting signal indicates that the working period of the wake-up signal is not larger than the time threshold, the counter and electronic components of an electronic device are turned off, thereby saving power of a battery. When the counting signal indicates that the working period of the wake-up signal is larger than the time threshold, the electronic device is switched from a power saving mode to a normal operation mode. In the normal operation mode, the battery can supply power to the electronic device.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 21, 2023
    Inventors: CHIH-NING CHEN, CHIH-HENG SU
  • Patent number: 11761037
    Abstract: The present invention discloses a probe applicable to high-throughput sequencing and a method of enriching a target region using the probe. The probe includes, in an order from a 5? end, a ligation arm, a masking sequence 1, a UID sequence 1, an Illumina Tag1 sequence, a dU region, an Illumina Tag2 sequence, a UID sequence 2, a masking sequence 2 and an extension arm; wherein the masking sequence 1, the masking sequence 2, the dU region, the UID sequence 1, and the UID sequence 2 may be 0 bp. When sequencing is performed by using a library built by the probe of the present invention, it is not necessary to add a sequencing primer additionally, and adopting the method of the present invention may directly use an RNA as a template to capture a target region, so as to simplify the experiment procedure.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: September 19, 2023
    Assignee: AMOY DIAGNOSTICS CO., LTD.
    Inventors: Linhua Zhang, Xuchao Li, Huijuan Ge, Baolei Jin, Ning Chen, Li Ruan, Limou Zheng
  • Patent number: 11755092
    Abstract: A power saving system of a battery charger is provided. A control terminal of a first transistor receives a wake-up signal. A counter is connected to a first terminal of the first transistor. The counter determines whether or not a working period of the wake-up signal from the first transistor is larger than a time threshold to output a counting signal. When the counting signal indicates that the working period of the wake-up signal is not larger than the time threshold, the counter and electronic components of an electronic device are turned off, thereby saving power of a battery. When the counting signal indicates that the working period of the wake-up signal is larger than the time threshold, the electronic device is switched from a power saving mode to a normal operation mode. In the normal operation mode, the battery can supply power to the electronic device.
    Type: Grant
    Filed: June 6, 2022
    Date of Patent: September 12, 2023
    Assignee: ANPEC ELECTRONICS CORPORATION
    Inventors: Chih-Ning Chen, Chih-Heng Su
  • Publication number: 20230283097
    Abstract: A switching charger for accurately sensing a small current is provided. First terminals of first transistors and a second transistor are coupled to a system voltage. Second terminals of the first transistors and a first input terminal of an operational amplifier are connected to a battery. A first terminal of a third transistor is connected to a second terminal of the second transistor and a second input terminal of the operational amplifier. A control terminal of the third transistor is connected to an output terminal of the operational amplifier. A first terminal of a fourth transistor is connected to a second terminal of the third transistor. First terminals of fifth transistors are coupled to an input voltage. Control terminals of the first transistors and the fifth transistors are connected to a control circuit. First terminals of sixth transistors are respectively connected to second terminals of the fifth transistors.
    Type: Application
    Filed: August 23, 2022
    Publication date: September 7, 2023
    Inventors: CHIH-NING CHEN, CHIH-HENG SU
  • Publication number: 20230271843
    Abstract: Provided is at least one of an improvement in the thermal stability of a CHA-type zeolite, which is achieved by a method different from that of the related art for improving thermal stability; a method for producing a CHA-type zeolite that improves thermal stability; and such a CHA-type zeolite. Provided is a CHA-type zeolite having a 1H-MAS-NMR spectrum and an IR spectrum in which, preferably, in the 1H-MAS-NMR spectrum, a ratio of an integrated intensity of a maximum peak having a peak top at a chemical shift of 3.0 to 3.5 ppm to an integrated intensity of a maximum peak having a peak top at a chemical shift of 4.0 to 4.5 ppm is greater than 0.12 and 0.5 or less, and, in the IR spectrum, a ratio of a maximum peak height of an absorption peak having a peak top at a wavenumber of 3630 cm?1 or greater and 3650 cm?1 or less to a maximum peak height of an absorption peak having a peak top at a wavenumber of 3590 cm?1 or greater and 3610 cm?1 or less is 0.40 or greater and 1.0 or less.
    Type: Application
    Filed: August 6, 2021
    Publication date: August 31, 2023
    Applicant: TOSOH CORPORATION
    Inventors: Ryo MITSUHASHI, Takuya KAWAMOTO, Hidekazu AOYAMA, Ning CHEN
  • Publication number: 20230258497
    Abstract: A sensor is provided. A first terminal of a first current source and a first terminal of a first transistor are connected to a cathode of the photodiode. A control terminal of a second transistor is connected to an output terminal of a first operational amplifier. A first terminal of the second transistor is connected to a second terminal of the first transistor through a first current mirror circuit. A second terminal of the second transistor is connected to a second current source, a second input terminal of a second operational amplifier and a first terminal of a third transistor. A first input terminal of the second operational amplifier is connected to the first terminal of the first transistor. A control terminal of the third transistor is connected to an output terminal of the second operational amplifier.
    Type: Application
    Filed: March 30, 2023
    Publication date: August 17, 2023
    Inventor: CHIH-NING CHEN
  • Publication number: 20230261582
    Abstract: Related to is a bidirectional capacitance - inductance - inductance - capacitance (CLLC) circuit with a coupled inductor, which is associated with a circuit topology and operation control of a bidirectional CLLC resonant converter. A bidirectional CLLC resonant circuit with a coupled inductor includes a primary side bridge, a secondary side bridge, a primary side resonant capacitor, a secondary side resonant capacitor, a coupled resonant inductor, and a transformer. Compared with a structure of a conventional bidirectional CLLC resonant circuit, two separate resonant inductors located at a primary side and a secondary side in an original resonant cavity are replaced with one coupled resonant inductor in the circuit; the coupled resonant inductor has opposite dotted terminals with the transformer, and a primary side and a secondary side of the coupled resonant inductor are respectively in serial connection with a primary side and a secondary side of the transformer.
    Type: Application
    Filed: February 16, 2022
    Publication date: August 17, 2023
    Inventors: Min Chen, Ning Chen, Bodong Li, Dongbo Zhang, Xiaoqing Wang, Xinnan Sun, Zhaopei Liang
  • Patent number: 11728056
    Abstract: A method for detecting the thicknesses of coating layers of nuclear fuel particles, comprising: collecting a surface image of a sample to be tested under a first amplification factor (S310); determining a testable particle in the surface image (S320); collecting a cross section image of the testable particle under a second amplification factor, wherein the second amplification factor is greater than the first amplification factor (S330); and determining the center of the testable particle in the cross section image and profile lines of all coating layers, and determining the thickness of each coating layer according to the center and the profile lines of each coating layer (S340). Also provided is a device for detecting the thicknesses of coating layers of the nuclear fuel particles.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: August 15, 2023
    Assignees: HUNAN UNIVERSITY, CHINA NORTH NUCLEAR FUEL CO., LTD
    Inventors: Jian Liu, Chao Jiang, Yan Xiong, Hang Zhang, Zhaochuan Hu, Rong Li, Ning Chen
  • Patent number: 11723387
    Abstract: Novel cultivars of Stevia rebaudiana plant, with a novel genetic trait of self-compatibility, and the advantageous use of this genetic trait in Stevia rebaudiana crossing breeding for increasing steviol glycosides production, including food and beverage products and other consumables, are disclosed.
    Type: Grant
    Filed: November 25, 2017
    Date of Patent: August 15, 2023
    Assignee: PureCircle USA Inc.
    Inventors: Avetik Markosyan, Runchun Jing, Yu Cheng Bu, Juan Zhu, Jian Ning Chen
  • Patent number: 11728384
    Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a well region in a substrate and forming an anti-punch through region in a top portion of the well region. The method further includes forming a barrier layer over the anti-punch through region and alternately stacking first semiconductor material layers and second semiconductor material layers over the barrier layer. The method further includes patterning the first semiconductor material layers, the second semiconductor material layers, the barrier layer, and the anti-punch through region to form a fin and removing the first semiconductor material layers and the barrier layer to expose the anti-punch through region. The method further includes forming a gate wrapping around the second semiconductor material layers.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Hsuan Hsiao, Winnie Victoria Wei-Ning Chen, Tung Ying Lee
  • Patent number: 11728405
    Abstract: A semiconductor structure includes source/drain (S/D) features disposed over a semiconductor substrate, a metal gate stack disposed between the S/D features, where the metal gate stack traverses a channel region between the S/D features, gate spacers disposed on sidewalls of the metal gate stack, and an etch-stop layer (ESL) disposed over the gate spacers and the S/D features. The semiconductor structure further includes an oxide liner disposed on the ESL, where the oxide liner includes silicon oxide and silicon dioxide, and an interlayer dielectric (ILD) layer disposed on the oxide liner, where composition of the ILD layer is different from composition of the oxide liner.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bwo-Ning Chen, Xusheng Wu, Chang-Miao Liu, Shih-Hao Lin
  • Publication number: 20230251927
    Abstract: A request to write host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination of a first status associated with the host data is made. The redundancy metadata associated with the host data is updated to indicate at least the first status associated with the host data. A memory access operation is performed to write the host data and the updated redundancy metadata to the memory device.
    Type: Application
    Filed: April 12, 2023
    Publication date: August 10, 2023
    Inventors: Seungjune Jeon, Juane Li, Ning Chen
  • Patent number: 11702522
    Abstract: A polymer-based spherical powder preparation device and preparation process are disclosed. The preparation device comprises a mill milling system and an inductively coupled plasma powder spheroidization system. The mill milling system of the preparation device can achieve ultra-fine grinding of the material at room temperature by applying strong extrusion, shear and circumferential stress to the material; and the inductively coupled plasma powder spheroidization system using high temperature plasma as high temperature heat source, the polymer powder can be heated uniformly, and the melting and cooling rate is fast, so the spheroidization can be completed in a short time. The preparation process of polymer based spherical powder was integrated and continuously produced by the preparation device.
    Type: Grant
    Filed: April 17, 2021
    Date of Patent: July 18, 2023
    Assignee: Sichuan University
    Inventors: Shibing Bai, Shiping Song, Yijun Li, Ning Chen
  • Patent number: 11704024
    Abstract: A memory sub-system performs a first media management operation among a plurality of individual data units of a memory device after a first interval, the first media management operation comprising a first algebraic mapping function, and performs a second media management operation among a first plurality of groups of data units of the memory device after a second interval, wherein a first group of the first plurality of groups comprises the plurality of individual data units, the second media management operation comprising a second algebraic mapping function.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: July 18, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Ying Yu Tai, Ning Chen, Jiangli Zhu
  • Patent number: 11698867
    Abstract: A logical-to-physical (L2P) data structure and a physical-to-logical (P2L) data structure are maintained. The L2P data structure comprises table entries that map a logical address to a physical address. The P2L data structure comprises data entries that map a physical address to a logical address. The P2L data entries also comprise a data move status, a base address, and a boundary indicator. A move operation is detected, wherein the move operation indicates that data referenced by a logical address is to be moved from a source physical address to a destination physical address. Responsive to detecting the move operation, the data move status associated with the source physical address in the P2L data structure is updated.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: July 11, 2023
    Assignee: Micron Technology, Inc.
    Inventors: Seungjune Jeon, Fangfang Zhu, Juane Li, Jiangli Zhu, Ning Chen
  • Publication number: 20230212414
    Abstract: A resin composition, an anti-etching layer and an etching method are provided. The resin composition includes a resin (A), a crosslinking agent (B), a surfactant (C), and a solvent (D). The resin (A) includes a hydroxyl type polystyrene resin (A-1), a hydroxyl type phenolic resin (A-2), a polyhydroxy phenol resin (A-3), or a combination thereof. The crosslinking agent (B) includes a structure of novolac epoxy resin type (B-1), polymethyl methacrylate type (B-2), maleimide type (B-3) or hyperbranched oligomer (B-4).
    Type: Application
    Filed: December 29, 2022
    Publication date: July 6, 2023
    Applicant: eChem Solutions Corp.
    Inventors: Yu-Ning Chen, Shao-Li Ho, Jia Jheng Lin, Hui-Ju Chen
  • Patent number: D998968
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: September 19, 2023
    Assignee: Apple Inc.
    Inventors: Christina J. Smiechowski, Duy P. Le, Jeffrey Scott Croyle, Matthew Phillip Casebolt, Matthew Vincent Costello, Christopher Wiita, Vijay Karthik Koneru, Robert Boyd, Joseph F. Dembs, Elvin Chu, Guillaume Raoult, Zu-Ning Chen, Christopher Kuh, Robert Brunner
  • Patent number: D1000117
    Type: Grant
    Filed: May 19, 2021
    Date of Patent: October 3, 2023
    Assignee: Apple Inc.
    Inventors: Christina J. Smiechowski, Duy P. Le, Jeffrey Scott Croyle, Matthew Phillip Casebolt, Matthew Vincent Costello, Christopher Wiita, Vijay Karthik Koneru, Robert Boyd, Joseph F. Dembs, Elvin Chu, Guillaume Raoult, Zu-Ning Chen, Christopher Kuh, Robert Brunner