Patents by Inventor Ning Chen
Ning Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11958894Abstract: The present disclosure pertains to compositions comprising anti-VEGF proteins and methods for producing such compositions.Type: GrantFiled: June 23, 2023Date of Patent: April 16, 2024Assignee: Regeneron Pharmaceuticals, Inc.Inventors: Shunhai Wang, Ning Li, Hunter Chen, Amardeep Singh Bhupender Bhalla, Shawn M. Lawrence, Amy S. Johnson, Meghan Casey, Jaimie Grapel
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Publication number: 20240116975Abstract: The present application relates to novel compounds that have modulating or activating effect on the activity of adenosine A3 receptor, preparation methods for the series of compounds, pharmaceutical compositions of the series of compounds, and pharmaceutical uses of the series of compounds.Type: ApplicationFiled: December 29, 2021Publication date: April 11, 2024Inventors: Chongbo HU, Jinqi YE, Shuhua PAN, Ning Hu, Tingting PAN, Long ZHAO, Zhengshu CHEN, Sanxing SUN
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Patent number: 11955061Abstract: Provided is a pixel driving circuit configured to provide a signal to a to-be-driven element. The pixel driving circuit includes: a current control sub-circuit, configured to transmit a current signal; a time length control sub-circuit, configured to transmit a time signal; and an output sub-circuit, electrically connected with the time length control sub-circuit and the current control sub-circuit, respectively; where the time length control sub-circuit is further configured to control the output sub-circuit to be turned on or off based on the time signal; the output sub-circuit is configured to, when turned on, control a current applied to the to-be-driven element based on the current signal, where duration of two adjacent turn-ons of the output sub-circuit is same and duration of two adjacent turn-offs of the output sub-circuit is same.Type: GrantFiled: March 3, 2021Date of Patent: April 9, 2024Assignees: Beijing BOE Display Technology Co., Ltd., BOE Technology Group Co., Ltd.Inventors: Ning Cong, Xiaochuan Chen, Minghua Xuan, Can Zhang, Ming Yang, Lijun Yuan, Angran Zhang
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Patent number: 11956991Abstract: A display panel includes a substrate and a grating disposed on a light-emitting side of the display panel. The grating includes a plurality of protruding portions and a plurality of interval portions, each interval portion is located between two adjacent protruding portions. The plurality of protruding portions are arranged on the substrate along a first direction, and each protruding portion extends along a second direction perpendicular to the first direction. Each protruding portion includes an outer surface and a bottom surface; the outer surface is a smooth curved surface, and the bottom surface is a flat surface. A cross-sectional figure of each protruding portion along a thickness direction of the display panel is a first figure; the first figure includes a curve and a bottom edge, and the first figure is a closed figure formed by the curve and the bottom edge.Type: GrantFiled: August 30, 2021Date of Patent: April 9, 2024Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Jin Zhao, Fudong Chen, Kang Guo, Xueyuan Zhou, Mengya Song, Yanhui Lu, Duohui Li, Ning Dang
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Patent number: 11955245Abstract: A method and a system for mental index prediction are provided. The method includes the following steps. A plurality of images of a subject person are obtained. A plurality of emotion tags of the subject person in the images are analyzed. A plurality of integrated emotion tags in a plurality of predetermined time periods are calculated according to the emotion tags respectively corresponding to the images. A plurality of preferred features are determined according to the integrated emotion tags. A mental index prediction model is established according to the preferred features to predict a mental index according to the emotional index prediction model.Type: GrantFiled: July 2, 2021Date of Patent: April 9, 2024Assignees: Acer Incorporated, National Yang Ming Chiao Tung UniversityInventors: Chun-Hsien Li, Szu-Chieh Wang, Andy Ho, Liang-Kung Chen, Jun-Hong Chen, Li-Ning Peng, Tsung-Han Yang, Yun-Hsuan Chan, Tsung-Hsien Tsai
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Publication number: 20240112283Abstract: The present disclosure provides an ecological governance method based on erosion prevention and control for a gentle slope farmland and relates to the technical field of ecological governance of farmlands. The ecological governance method based on erosion prevention and control for a gentle slope farmland includes the following steps: sampling a gentle slope farmland to investigate erosion thereof; and determining erosion of a gentle slope cultivated land and selecting a corresponding recovery strategy based on a detection result of a sample, a soil quality index (SQI), and a comprehensive vegetation quality index (VQI), where the recovery strategy includes a natural recovery method and a biological-farming comprehensive recovery method; enclosing the gentle slope cultivated land, fallowing the gentle slope cultivated land and reducing tillage; exterminating insect pests and poisonous weeds in the enclosed area; and turning over straws under soil by a cultivator. The growth of poisonous weeds is inhibited.Type: ApplicationFiled: September 21, 2023Publication date: April 4, 2024Inventors: Weiping Yan, Shaofeng Bian, Yongjun Wang, Hongxiang Zhao, Lihua Zhang, Baoyu Chen, Hongjun Wang, Tiehua Cao, Xuanhe Liang, Guobo Tan, Ning Sun, Chen Xu, Fei Li, Xiangmeng Meng, Jinghua Wang, Qingge Wang
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Patent number: 11945995Abstract: Disclosed are a temporary plugging agent and a preparation method thereof, and a method for temporary plugging and fracturing of a high-temperature reservoir. The temporary plugging agent includes the following components in mass fractions: acrylamide 5%, composite crosslinking agent 1%, laponite 1%, ammonium persulfate 0.1% and water 92.9%.Type: GrantFiled: December 15, 2020Date of Patent: April 2, 2024Assignee: CHINA UNIVERSITY OF PETROLEUMInventors: Tiankui Guo, Yuelong Zhang, Zengbao Wang, Ning Qi, Mingliang Luo, Feipeng Wu, Ming Chen, Xiaoqiang Liu, Jiwei Wang, Xiaozhi Wang, Yuanzhi Gong
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Patent number: 11949016Abstract: A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.Type: GrantFiled: May 13, 2021Date of Patent: April 2, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih-Hao Lin, Chih-Chuan Yang, Chih-Hsuan Chen, Bwo-Ning Chen, Cha-Hon Chou, Hsin-Wen Su, Chih-Hsiang Huang
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Publication number: 20240107182Abstract: An image processing method and an electronic device are provided. The image processing method includes: displaying a first interface, where the first interface includes a first control; detecting a first operation on the first control; obtaining a first image stream in response to the first operation, where the first image stream is an image stream of first color space; converting the first image stream into a second image stream of second color space according to a demosaicing algorithm; performing downsampling and resampling on the second image stream to obtain a third image stream, where the third image stream is an image stream of the first color space, and a size of the third image stream is less than that of the first image stream; and performing image processing on the third image stream to obtain a fourth image stream.Type: ApplicationFiled: August 24, 2022Publication date: March 28, 2024Applicant: Honor Device Co., Ltd.Inventors: Ning WANG, Bin CHEN, Xiangrui ZENG, Yu WANG
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Publication number: 20240100493Abstract: A mixing device includes a conveying part, a discharging pipe and a detecting part. The conveying part is internally provided with a plurality of conveying channels, and the plurality of conveying channels are used for correspondingly conveying various materials. The discharging pipe is internally provided with a mixing channel and connected to the conveying part, and each of the conveying channels communicates with the mixing channel. The detecting part is used for detecting a color of the mixed material obtained after the various materials are mixed in the mixing channel.Type: ApplicationFiled: December 6, 2023Publication date: March 28, 2024Inventors: Jinwu WU, Fangnan XU, Ning ZHANG, Bin ZHAO, Renyu CHEN
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Publication number: 20240100972Abstract: The present disclosure relates to the field of EV-DWPT (electric vehicle dynamic wireless power transfer), and specifically discloses a double solenoid EV-DWPT system and a parameter optimization method thereof. The system is provided with a magnetic coupling mechanism, comprising a transmitting structure and a receiving structure. The transmitting structure includes a plurality of double solenoid transmitting rails arranged equidistantly along a road direction. Each double solenoid transmitting rail includes a square tubular magnetic core perpendicular to the road surface, and transmitting solenoids wound spirally using one and the same Litz wire wound in opposite directions.Type: ApplicationFiled: November 17, 2023Publication date: March 28, 2024Applicants: ELECTRIC POWER SCIENCE RESEARCH INSTITUTE OF GUANGXI POWER GRID CO., LTD., CHONGQING UNIVERSITYInventors: Xiaorui Wu, Yue Sun, Xiaofei Li, Jing Xiao, Shaonan Chen, Yue Zuo, Yuhong Mo, Ning Wu, Wenlan Gong, Shuai Han, Weidong Chen, Min Guo, Xiaoxuan Guo, Chunsen Tang
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Publication number: 20240105083Abstract: A high-speed remote landslide simulation test device with a variable angle includes a support adjustment component, slide plates, and loose leaves. The device first transmits the operation paths of adjusting the slide plate at different angles to the controller, and the personnel operates the control panel to control the support jack, the motor, and the electromagnet to start and stop through the controller, the output shaft of the motor drives the stainless steel threaded rod to rotate, the controller first energizes one electromagnet and disconnects the other three electromagnets, which can only make the stainless steel threaded rod rotate in a fixed position inside the inner threaded pipe, and the three inner threaded pipes follow the rotation direction of the stainless steel threaded rod, thus, the position of the support jack can be moved separately.Type: ApplicationFiled: December 8, 2023Publication date: March 28, 2024Applicant: Chang'an UniversityInventors: Hengxing LAN, Mervyn LAN, Zhao CHEN, Shijie LIU, Weifeng SUN, Ning ZHANG, Bei ZHANG
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Patent number: 11940692Abstract: An electronic device includes a substrate, a plurality of first retaining walls, a second retaining wall, and a light emitting element. The first retaining walls are arranged on the substrate. The second retaining wall is arranged on the substrate and disposed within one of the first retaining walls. The light emitting element is arranged on the substrate and disposed between the second retaining wall and one of the first retaining walls adjacent to the second retaining wall. In a cross section, there are a first distance between the light emitting element and the one of the first retaining walls, and a second distance between the light emitting element and the second retaining wall, wherein the second distance is smaller than the first distance.Type: GrantFiled: January 19, 2023Date of Patent: March 26, 2024Assignee: INNOLUX CORPORATIONInventors: Wei-Tsung Hsu, Chun-Fang Chen, Wei-Ning Shih
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Patent number: 11942513Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.Type: GrantFiled: January 10, 2022Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Jui-Chien Huang
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Patent number: 11940828Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.Type: GrantFiled: August 17, 2022Date of Patent: March 26, 2024Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Shao-Chang Huang, Yeh-Ning Jou, Ching-Ho Li, Kai-Chieh Hsu, Chun-Chih Chen, Chien-Wei Wang, Gong-Kai Lin, Li-Fan Chen
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Patent number: 11942478Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.Type: GrantFiled: May 6, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
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Publication number: 20240097267Abstract: This application provides a battery and an electric device. The battery provided in this application is provided with a blocking member between two adjacent rows of battery cells along the length direction of the battery cell. In the process of assembling the battery cells in the box, the adhesive at the bottom of the battery cell, when spreading under compressing from the gap created by the housing chamfers to the end cover, will be blocked by the blocking member, thus preventing the adhesive from overflowing to the end cover, improving the safety performance of the battery.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Applicant: CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITEDInventors: Laijuan YU, Xingdi Chen, Ning Zhang, Anwei Wu, Ye Xu, Renyu Chen
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Publication number: 20240098250Abstract: Methods and devices are provided for decoding a video block in GPM. The method includes: partitioning the video block into a first geometric partition and a second geometric partition; receiving a first template matching (TM) enable flag for the first geometric partition a second TM enable flag for the second geometric partition, the first TM enable flag indicating whether a uni-directional motion of the first geometric partition is refined by TM, and the second TM enable flag indicating whether a uni-directional motion of the second partition is refined by the TM; receiving a first merge GPM index for the first geometric partition and a second merge GPM index for the second geometric partition; constructing a uni-directional motion victor (MV) candidate list of the GPM; and generating a first uni-directional MV for the first geometric partition and a second uni-directional MV for the second geometric partition.Type: ApplicationFiled: November 17, 2023Publication date: March 21, 2024Applicant: BEIJING DAJIA INTERNET INFORMATION TECHNOLOGY CO., LTD.Inventors: Xiaoyu XIU, Che-Wei KUO, Wei CHEN, Hong-Jheng JHU, Ning YAN, Yi-Wen CHEN, Xianglin WANG, Bing YU
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Publication number: 20240096895Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.Type: ApplicationFiled: November 29, 2023Publication date: March 21, 2024Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
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Publication number: 20240096942Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Inventors: Jung-Chien Cheng, Kuo-Cheng Chiang, Shi Ning Ju, Guan-Lin Chen, Chih-Hao Wang, Kuan-Lun Cheng