Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A processing device in a memory sub-system maintains a mapping data structure to track data movements from a plurality of data management units associated with a media management operation on a memory device. The processing device further uses a first indicator and a second indicator of a plurality of indicators to indicate which data of data management units of a source group of data management units have been copied to a destination group of data management units during the media management operation. Data located in data management units preceding the first indicator have been copied to data management units of the destination group of data management units. Data located in data management units associated with the first indicator and the second indicator or between the first indicator and the second indicator are either copied to data management units of the destination group of data management units or remain located in data management units of the source group of data management units.

Abstract: A semiconductor structure includes source/drain (S/D) features disposed over a semiconductor substrate, a metal gate stack disposed between the S/D features, where the metal gate stack traverses a channel region between the S/D features, gate spacers disposed on sidewalls of the metal gate stack, and an etch-stop layer (ESL) disposed over the gate spacers and the S/D features. The semiconductor structure further includes an oxide liner disposed on the ESL, where the oxide liner includes silicon oxide and silicon dioxide, and an interlayer dielectric (ILD) layer disposed on the oxide liner, where composition of the ILD layer is different from composition of the oxide liner.

Abstract: Data is copied, to a first group of data blocks in a first plurality of groups of unmapped data blocks, from a second group of data blocks in a second plurality of groups of mapped data blocks. Upon copying data to the first group of data blocks from the second group of data blocks, the first group of data blocks is included in the second plurality of groups of mapped data blocks. Upon including the first group of data blocks in the second plurality of groups of mapped data blocks, a wear leveling operation is performed on the first group of data blocks, wherein performing the wear leveling operation comprises determining a base address of the first group of data blocks, the base address indicating a location at which the first group of data blocks begins. A request to access subsequent data at a logical address associated with a data block included in the first group of data blocks is received.

Abstract: Disclosed are methods and systems for a WLAN device operating on DFS channels to calibrate the PRI as well as delays between partial pulses of received radar pulses that are impaired due to channel and filtering effects. The calibrated PRI may approximate the PRI of the transmitted pulses. The calibrated delay between the partial pulses estimates the interval between two partial pulses that originally belong to the same transmitted pulse. Using the calibrated PRI and the calibrated delay between partial pulses, the WLAN device may reconstruct the original pulses from received impaired pulses even when the impaired pulses are delayed and partial pulses of the original pulses. The WLAN device may use the calibrated results to correct the shortened PW and varying PRI of the impaired pulses to restore the partial pulses to their full PW with a relatively uniform PRI, increasing the probability of detecting the radar signals.

Abstract: The present disclosure provides a class of compounds useful for the modulation of beta-secretase enzyme (BACE) activity. The compounds have a general Formula I: (insert Formula I structure) wherein variables W, X, Y, R2, R2?, R3, R4, R5, R6, and R7 of Formula I are defined herein. This disclosure also provides pharmaceutical compositions comprising the compounds, and uses of the compounds and compositions for treatment of disorders and/or conditions related to beta amyloid (A?) plaque formation and deposition, resulting from the biological activity of BACE. Such BACE mediated disorders include, for example, Alzheimer's Disease, cognitive deficits, cognitive impairments, and other central nervous system conditions.

Abstract: Disclosed are methods and systems for a WLAN device operating on DFS channels to calibrate the PRI as well as delays between partial pulses of received radar pulses that are impaired due to channel and filtering effects. The calibrated PRI may approximate the PRI of the transmitted pulses. The calibrated delay between the partial pulses estimates the interval between two partial pulses that originally belong to the same transmitted pulse. Using the calibrated PRI and the calibrated delay between partial pulses, the WLAN device may reconstruct the original pulses from received impaired pulses even when the impaired pulses are delayed and partial pulses of the original pulses. The WLAN device may use the calibrated results to correct the shortened PW and varying PRI of the impaired pulses to restore the partial pulses to their full PW with a relatively uniform PRI, increasing the probability of detecting the radar signals.

Abstract: A read operation to retrieve data stored at a memory device is performed. Whether the data retrieved from the memory device includes an error that is not correctable is determined. Responsive to determining that the data retrieved from the memory device comprises the error that is not correctable, a buffer in a data path along which a write operation was performed to write the data at the memory device is searched for the data.

Abstract: Provided is a ?-zeolite that has an SiO2/Al2O3 ratio of less than 20 but yet is comparable or superior in heat resistance to conventional ?-zeolites having SiO2/Al2O3 ratio of 20 or greater. This ?-zeolite is characterized in that: in powder X-ray diffractometry using a CuK?-ray as a ray source, the full width at half maximum of a powder X-ray diffraction peak on the (302) plane is 0.15-0.50 inclusive; and the molar ratio of silica to alumina is less than 20.0. Preferably, the ?-zeolite is obtained by a production method which comprises a crystallization step for crystallizing a composition comprising an alumina source, a silica source, an alkali source, a tetraethylammonium cation source and water, characterized in that the composition contains potassium and the molar ratio of potassium to silica exceeds 0.04.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The structure includes a semiconductor substrate; a fin extending above the semiconductor substrate, wherein the fin includes a first layer over the semiconductor substrate and a second layer over the first layer, wherein the first layer includes silicon germanium having a first concentration of germanium, and wherein the second layer includes silicon germanium having a second concentration of germanium less than the first concentration of germanium; and a gate stack disposed over the fin.

Abstract: A method for forming a gate-all-around structure is provided. The method includes forming a plurality of a first type of semiconductor layers and a plurality of a second type of semiconductor layers alternately stacked over a fin. The first type of semiconductor layers includes a first semiconductor layer and a second semiconductor layer, and the first semiconductor layer has a thickness greater than that of the second semiconductor layer. The method also includes removing the second type of semiconductor layers. In addition, the method includes forming a gate to wrap around the first type of semiconductor layers.

Abstract: According to an embodiment, a receiver is described comprising an input configured to receive a digital input signal and a digital filter configured to deliver a filtered digital output signal and to deliver stability information wherein the digital filter is configured to enter or stay in a transition state after a transition at the input signal, leave the transition state when the input signal is considered being stable, update the output signal when leaving the transition state and deliver the stability information indicating transitions at the input signal during transition state.

Abstract: Compounds of Formula I and Formula II, pharmaceutically acceptable salt thereof, stereoisomers of any of the foregoing, or mixtures thereof are agonists of the APJ Receptor and may have use in treating cardiovascular and other conditions. Compounds of Formula I and Formula II have the following structures: (I), (II) where the definitions of the variables are provided herein.

Abstract: Methods, systems, and devices for performing an access operation on a memory cell, incrementing a value of a first counter based on performing the access operation on the memory cell, determining that the incremented value of the first counter satisfies a threshold, incrementing a value of a second counter based on determining that the incremented value of the first counter satisfies the threshold, and performing a maintenance operation on the memory cell based on determining that the incremented value of the first counter satisfies the threshold are described.

Abstract: In an embodiment, a system includes a plurality of memory components that each include a plurality of management groups. Each management group includes a plurality of sub-groups. The system also includes a processing device that is operatively coupled with the plurality of memory components to perform wear-leveling operations that include maintaining a sub-group-level delta write count (DWC) for each of the sub-groups of each of the management groups of a memory component in the plurality of memory components. The wear-leveling operations also include determining, in connection with a write operation to a first sub-group of a first management group of the memory component, that a sub-group-level DWC for the first sub-group equals a management-group-move threshold, and responsively triggering a management-group-move operation from the first management group to a second management group of the memory component.

Abstract: Devices, methods, and media are described for unmap support in coarse mapped storage. In one embodiment a controller of a memory sub-system manages a set of metadata for super management units (SMU) of the memory sub-system, wherein each SMU of the memory sub-system comprises a plurality of data management units (MU), and wherein each MU comprises a plurality of addressable memory elements as part of a coarse memory storage of the memory sub-system. The controller processes a trim command for a first SMU of the plurality of SMUs, and adjusts a trim bit associated with metadata for the first SMU. This trim bit can then be used to manage read and write operations as the trimmed unit waits to be written with an unmap data pattern. Similarly, a trim bit in MU metadata can be used manage related operations to prevent memory access errors.

Abstract: Embodiments include methods, systems, devices, instructions, and media for internal management traffic regulation in memory devices. In one embodiment, a processing device is coupled to memory components to monitor host read operations and host write operations from a host device coupled to the plurality of memory components. The processing device schedules, using a variable size internal command queue, a predetermined proportion of back-end processing device read and write operations as internal management traffic proportional to a number of the host read operations and a number of the host write operations. The processing device then executes a subset of the host read operations and the host write operations. Following execution of the subset of the host read operations and the host write operations, the processing device executes an internal management traffic operation based on the predetermined proportion.

Abstract: Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.

Abstract: A request to store a first data is received. The first data and a first error-checking data are received. The first error-checking data can be based on a cyclic redundancy check (CRC) operation of the first data. A second data is generated by modifying the first data. A second error-checking data of the second data is generated by using the first error-checking data and a difference between the first data and the second data.

Abstract: A request to store a first data is received. The first data and a first error-checking data are received. The first error-checking data can be based on a cyclic redundancy check (CRC) operation of the first data. A second data is generated by removing a portion of the first data. A second error-checking data of the second data is generated by using the first error-checking data and the removed portion of the first data.