Abstract: A forming apparatus of a thin film, includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate, and a feeding device, which is provided in the processing chamber, for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film, includes steps of forming a thin film on a surface of a supplied substrate in a processing chamber, and feeding material for forming an organic molecular layer including silicon or germanium on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

Abstract: An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

Abstract: A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.

Abstract: A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.

Abstract: An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

Abstract: A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.

Abstract: A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.

Abstract: A bleaching composition comprising:(a) Hydrogen peroxide or peroxide that produces hydrogen peroxide in aqueous solution; and(b) An organic acid peroxide precursor that produces organic acid peroxide by reacting with said hydrogen peroxide or peroxide that produces hydrogen peroxide in aqueous solution, wherein said organic acid peroxide is represented by general formula (I): ##STR1## wherein R.sup.1 represents a straight chain or branched chain alkyl or alkenyl group having 1-5 carbon atoms, R.sup.2 represents a straight chain or branched chain alkylene group having 1-8 carbon atoms or a phenylene group that may be substituted with a straight chain or branched chain alkyl group having 1-5 carbon atoms, A represent identical or different alkylene groups having from 2 to 4 carbon atoms, and n represents an integer from 0-100.

Abstract: In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.

Abstract: A forming apparatus of a thin film includes a processing chamber where a predetermined process is carried out on a surface of a supplied substrate. A feeding device is provided in the processing chamber for feeding material to form an organic molecular layer including silicon or germanium on the surface of the substrate. A forming method of a thin film includes the steps of forming the thin film on the surface of the supplied substrate in the processing chamber, and feeding material for forming the organic molecular layer, including silicon or germanium, on the formed thin film on the surface of the substrate through a feeding device in the processing chamber, and then forming the organic molecular layer on the surface of the substrate.

Abstract: An improved semiconductor device fabrication technique is disclosed. A resist layer, composed of a chemical compound which generates an acid when exposed to energy light and a resin which contains protecting groups that are removed from the resin by acid, is formed on top of a semiconductor substrate. The resist layer is subjected to a lithography and a development process and is formed into a resist pattern. This resist pattern is exposed to ultraviolet beams, and the chemical compound generates an acid and the protecting groups are removed from the resin. As a result of such an elimination reaction, the surface of the resist pattern becomes coarse. Thereafter, an implant of ions is carried out to the semiconductor substrate using the resist pattern as a mask. The surface of the semiconductor substrate is cleaned using a cleaning solution, and the resist pattern with a coarse surface can easily and completely be removed from the semiconductor substrate.

Abstract: A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having different phases in order of positions of the electrodes, and a holder on which an object to be processed is placed. In the apparatus, a magnetic field is produced under plural alternating electric fields, so that electrons in a plasma generating portion are rotated to generate high density plasma under a high vacuum when the high frequencies are applied to the electrodes to generate the plasma and a specified process such as etching, CVD, or doping is carried on the object by reaction products generated at the portion.

Abstract: Three electrodes are disposed at lateral sides of a plasma generating chamber of an etching apparatus serving as a plasma generating apparatus. A sample stage is disposed at a lower part of the plasma generating chamber, and an opposite electrode is disposed at an upper part thereof. High frequency electric power having a first frequency is supplied to the sample stage and the opposite electrode. Respectively supplied to the three electrodes 4, 5, 6 are high frequency electric powers which are oscillated by a three-phase magnetron, which have a second frequency different from the first frequency and of which respective phases are successively different by about 120.degree. from one another, thus forming a rotational electric field in the plasma generating chamber.

Abstract: A new surface reaction model has been presented to simulate topological evolutions by taking into account the existence of absorbed radicals on the substrate surface. The model treats the etching rate as a function of the coverage ratio by absorbed radicals on the surface. Based on the model, a two-dimensional topography simulator has been provided. The simulator is applied to silicon-dioxide trench teachings made by hydrofluorcarbon gases. The topography simulator is used in a dry-etching process for realizing sub-half micron patternings.

Abstract: On the inner surface of a chamber are circumferentially disposed three lateral electrodes at regular intervals. To the lateral electrodes are applied three high-frequency electric powers of 50 MHz, each differing in phase by approximately 120.degree.. On the bottom of the chamber is placed a sample stage serving as a second electrode, around which is provided a ring-shaped earth electrode. To the sample stage is applied high-frequency electric power of 13.56 MHz. The distance between each of the three lateral electrodes and the earth electrode is longer than the distance between the sample stage and the earth electrode.

Abstract: After accumulating a BPSG film layer on a silicon substrate, a first Al--Si--Cu film layer, a W film layer and a second Al--Si--Cu film layer are successively accumulated on this BPSG film layer. A resist pattern with wide-width and narrow-width pattern portions is formed on the second Al--Si--Cu film layer. The wide-width pattern portion is provided at a position corresponding to a contact for connecting a first-layer metallic wiring and a second-layer metallic wiring, while the narrow-width pattern portion is provided at a position corresponding to a wiring portion for the first-layer metallic wiring. After applying first etching on the second Al--Si--Cu film layer with a mask of the resist patter, second etching is applied on the W film layer. Thereafter, by applying third etching, the resist pattern remaining on the first-layer metallic wiring is removed and the first Al--Si--Cu film layer is transfigured into a tall metallic film portion and a short metallic film portion.

Abstract: A plasma generating method comprises: a first step of disposing a plurality of lateral electrodes at lateral sides of a plasma generating part in a vacuum chamber; a second step of respectively applying, to the lateral electrodes, high frequency electric powers of which frequencies are the same as one another and of which phases are different from one another, thereby to excite, in the plasma generating part, a high frequency rotating electric field to cause electrons under translational motions in the plasma generating part to present oscillating or rotating motions; and a third step of applying, to the plasma generating part, a magnetic field substantially at a right angle to the working plane of the high frequency rotating electric field, thereby to convert the translational movement of the electrons in the plasma generating part into revolving motions under oscillating or rotating motions by which the electrons revolve in the plasma generating part.

Abstract: At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit.

Abstract: An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

Abstract: According to the method of preventing the corrosion of metallic wirings of the present invention, aluminium alloy wirings are formed on the surface of a substrate with the use of photoresists, and the photoresists are then removed. Thereafter, HMDS (hexamethyl disilazine) serving as a surface-active agent or its derivative is supplied to the aluminium alloy wirings to form hydrophobic molecular layers on the lateral walls of the aluminium alloy wirings.