Abstract: Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

Abstract: A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

Abstract: The fine pattern forming method includes the steps of applying an organic polymer film on a semiconductor substrate and heat treating the same; applying a resin solution (including an acid degradation polymer or an acid reactive monomer, an acid generator capable of generating an acid by irradiation with an electric charged beam, and a silicone resin) on the organic polymer layer and heat treating the same; carrying out a heat treatment after a pattern is written, causing the generated acid to react with the acid degradation polymer or the acid reactive monomer and carrying out a development in an alkaline solution to form a resist pattern; and etching the organic polymer layer using the resist pattern as a mask.

Abstract: A method for evaluating a resist coating comprising the steps of: forming a first layer resist pattern including an alignment mark by applying a first resist on a semiconductor substrate and by exposing and developing said first resist, said first layer resist pattern having a ridge portion; irradiating said first layer resist pattern with a deep ultraviolet ray; applying, onto said irradiated first layer resist pattern, a second resist having substantially the same refractive index as said first resist to form a second resist coating; detecting said alignment mark formed in said first layer resist pattern, and relatively positioning a pattern for said second resist and said first layer resist pattern; and determining nonuniformity characteristics of said second resist coating by measuring an overlay accuracy between said first layer resist pattern and said pattern for said second resist.

Abstract: In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.

Abstract: An optical apparatus for aligning a reticle and a wafer together in connection with reduction projection onto the wafer of an image of a circuit pattern formed on the reticle. Two light beams having slightly different frequencies are concurrently applied to alignment gratings on the reticle and alignment gratings on the wafer through the windows on the reticle and a reduction projection lens. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the reticle of the light applied to the alignment gratings are caught by a first optical sensor. Heterodyne signals of interference rays resulting from diffraction by the alignment gratings on the wafer of the light applied to the alignment gratings are caught by a second optical sensor. The difference in phase of the heterodyne signals detected by the respective optical sensors is detected by a phase meter, and the position of the wafer relative to the reticle is adjusted so that the phase difference is reduced to zero.

Abstract: Disclosed is a fine pattern forming method which is capable of forming a high positive-to-negative reversal pattern high in dry-etch resistance, at high density, by irradiating an entire surface of a resist with ion shower at low doses before or after electron beam or focus ion beam exposure, and then developing it.

Abstract: The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film.

Abstract: A positive type fine resist pattern can be formed at a high sensitivity at a high precision by using, as a resist film for a di-layer resist, a mixture or alternating copolymer of a silicon-containing resin and a polysulfone.

Abstract: A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group,a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

Abstract: A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.

Abstract: Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

Abstract: An optically oriented photoresist material comprised of an organic polymer and an organic crystal material each having a different refractive index to form an optically oriented layer on a substrate wherein the optical waveguide is formed by an effect of the refractive index difference, and in said waveguide layer thus formed, the spread and scattering of lights are suppressed and very fine mask patterns of said photoresist can be produced.

Abstract: A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.

Abstract: A first lens, a second lens, means and a third lens means are arranged successively in a direction of travel of a ray. The first lens means each comprising a single lens element power. The second lens means has a predetermined negative refracting power. The third lens means has a predetermined positive refracting power. A fourth lens means consisting of a plurality of lens elements follows the third lens means in the direction of travel of the ray and has a predetermined positive refracting power. At least one surface of the first, second, third, and fourth lens elements is aspherical. The follwoing conditions (1), (2), and (3) are satisfied:4f<f3<20f (1)0.65<(f4/d34)<1.

Abstract: A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.

Abstract: A system for controlling the relation in position between a photomask and a wafer for use in manufacturing apparatus of a highly integrated circuit such as large scale integration (LSI). The position control system includes a coherent light source for generating two light beams which are different in frequency and polarizing direction from each other. The light beams from the coherent light source is introduced into a first diffraction grating and the diffracted light from the first diffraction grating selectively pass through a telecentric lens system and are led to second and third diffraction gratings respectively disposed on the photomask and the wafer. Light beat signals are obtained in correspondance with the diffracted light from the second and third difraction gratings and the position relation between the photomask and wafer is controlled on the basis of the phase difference between the obtained light beat signals which corresponds to the position difference between the photomask and the wafer.

Abstract: A projection optical system for use in a precise copy which uses a pair of catadioptric optical systems consisting of convex mirrors, concave mirrors, and phase correction members is shown. Two catadioptric optical systems commonly use an entrance pupil on a coaxis and are coupled so as to respectively face the phase correction members. Each of the concave mirrors has an opening at the center. Each of the convex mirrors has no opening in one embodiment but has an opening portion at the center in another embodiment.

Abstract: A reduction projection type alignment and exposure apparatus which comprises a light source, a reticle having a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a substrate having a second grating, and a plurality of photo-detectors for detecting light intensities of a plurality of spectrums appearing on the spatial filter.The light beam generated from the light source is applied to the reticle at which it is divided into a plurality of diffracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, the spatial filter and the second lens system onto the substrate so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams appear as a plurality of spectrums on the spatial filter. These spectrums are detected by photo-detectors and used for alignment of the reticle and the substrate.

Abstract: Disclosed .[.in.]. .Iadd.is .Iaddend.an aligning and exposing method suitable for use in the production of LSIs. Coherent ray beams are applied from two directions to form .Iadd.an .Iaddend.interference fringe through interference of the coherent rays. A diffraction grid is disposed in the optic paths of the ray beams substantially in parallel with the interference fringe. The ray beams reflected .[.and.]. .Iadd.or .Iaddend.transmitted by the grid are converged by a lens system and the intensities of the ray beams are measured to detect the relative position between the interference fringe formed by two coherent ray beams and the diffraction grid, thereby to permit a highly accurate alignment of fine semiconductor element. The pitch of the grid on the substrate is selected to be n (n being an integer) times as large as the pitch of the interference fringe, so that the grid for alignment purpose is formed simultaneously with the formation of the LSI pattern by photolithographic technic.