Patents by Inventor Noboru Nomura
Noboru Nomura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 4771180Abstract: A reduction projection type alignment and exposure apparatus having a light source, for alignment, a reticle having at least a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a wafer having at least a second grating, and a photo-detector for detecting light intensity of superimposed beams appearing on the spatial filter. An optical system for light exposure is provided separately from the optical system for alignment which includes the light source for alignment, first and second lens system, spatial filter, etc.Type: GrantFiled: October 8, 1986Date of Patent: September 13, 1988Assignee: Matsushita Electric Industrial Co. Ltd.Inventors: Noboru Nomura, Kazuhiro Yamashita
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Patent number: 4757354Abstract: A projection optical system for photolithography includes a refraction sub-system and a cata-dioptric sub-system optically connected to each other. The refraction sub-system extends at an object side. The cata-dioptric sub-system extends at an image side. The refraction sub-system is generally composed of refracting members. The cata-dioptric sub-system is generally composed of a phase compensating member, a concave mirror, and a convex mirror. The phase compensating member adjoins the refraction sub-system. At least the concave mirror has a central opening through which light passes. The light forms an image at a rear of the concave mirror.Type: GrantFiled: April 28, 1987Date of Patent: July 12, 1988Assignee: Matsushita Electrical Industrial Co., Ltd.Inventors: Takeo Sato, Nobuhiro Araki, Koichi Kawata, Noboru Nomura, Atsushi Ueno, Shotaro Yoshida
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Patent number: 4745042Abstract: This invention relates to a composition of a water-soluble photopolymer which is synthesized from a water-soluble organic matter, which matter is a base polymer produced and refined particularly by bacterial culture biotechnically and contains at least one of polysaccharides, protein, gelatin, casein, polyvinyl pyrrolidone and polyvinyl alcohol, in particular pullulan which is a natural polysaccharide, and chemicals to add functions to aqueous solution of the base polymer, for example, water-soluble radiation sensitive chemical, crosslinking agent, catalyst, epoxy compound, and a compound possessing bleaching or fading action with respect to radiation.The water-soluble photopolymer can be developed in water, and is high in safety and small in aging, and is expected to be used as the material of single-layer resist or multi-layer resist of high resolution and high resistance, or as the material for contrast enhanced litography.Type: GrantFiled: April 17, 1985Date of Patent: May 17, 1988Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masaru Sasago, Masayuki Endo, Kenichi Takeyama, Noboru Nomura
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Patent number: 4734345Abstract: A method and apparatus for making a semiconductor device involves placing a semiconductor wafer in a position where two coherent light beams can interfere thereon. One of the coherent light beams is modulated by a hologram inserted in the path of the beam projected onto a surface of the semiconductor wafer. The other of the coherent light beams is also projected onto the same surface of the semiconductor wafer. The two interfering light beams form a pattern on a photoresist film found on the surface of the semiconductor wafer, which can be developed by photoresist techniques.Type: GrantFiled: May 28, 1986Date of Patent: March 29, 1988Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Koichi Kugimiya
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Patent number: 4685198Abstract: Disclosed is a method of isolating a transistor perfectly by employing a selective oxidation technology (LOCOS technology). More particularly, vertical openings are formed in the surface of {100} silicon substrate, and oxidation resistant films are formed of this surface and in part of the side walls of these openings. In succession, by etching with an etchant having an orientation anisotropy, dents are formed at high precision in the side walls of the openings. By oxidizing using the oxidation resistant film as the mask, an oxide film growing out from a dent in the opening side wall is connected with another oxide film growing out from an adjacent dent. The transistor thus formed in the active region of the silicon electrically isolated from the substrate is small in parasitic capacitance and may be formed into a small size, so that it possesses the features suited to VLSI, that is, high speed, low power consumption, and processability to high density integration.Type: GrantFiled: July 25, 1985Date of Patent: August 11, 1987Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kenji Kawakita, Noboru Nomura, Toyoki Takemoto
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Patent number: 4672496Abstract: A thin magnetic film is deposited over a nonmagnetic or piezoelectric substrate. When a shock wave is propagated through this substrate from its one end to the other end, the permeability of the thin magnetic film is locally increased and a portion or region having a high permeability also travels from one end to the other end of the thin magnetic film in unison with the shock wave. A magnetic core with a signal winding is disposed and magnetically coupled with the thin magnetic film. The signal can be recorded or reproduced while the recording medium is scanned.Type: GrantFiled: July 22, 1982Date of Patent: June 9, 1987Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kenji Kanai, Nobuyuki Kaminaka, Noboru Nomura, Yuuji Omata
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Patent number: 4660113Abstract: A magnetoresistive type thin film magnetic head is completely unaffected by external noise and produces only low interference with a recording medium. A magnetoresistive element which constitutes the thin film magnetic head has three terminals constituted by two end terminals and an intermediate terminal. Constant currents which flow in opposite directions are respectively supplied to the two end terminals. A magnetic field of a signal recorded on and reproduced from a single track of the recording medium is applied to the magnetoresistive element, and reproduction outputs of opposite phases appear at the two end terminals. These outputs are differentially amplified by a differential amplifier. Furthermore, the magnetoresistive element is biased by an induced magnetic anisotropy means in a predetermined direction.Type: GrantFiled: December 9, 1982Date of Patent: April 21, 1987Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Yasuharu Shimeki
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Patent number: 4636077Abstract: Disclosed in an aligning and exposing method suitable for use in the production of LSIs. Coherent ray beams are applied from two directions to form interference fringe through interference of the coherent rays. A diffraction grid is disposed in the optic paths of the ray beams substantially in parallel with the interference fringe. The ray beams reflected and transmitted by the grid are converged by a lens system and the intensities of the ray beams are measured to detect the relative position between the interference fringe formed by two coherent ray beams and the diffraction grid, thereby to permit a highly accurate alignment of fine semiconductor element. The pitch of the grid on the substrate is selected to be n (n being an integer) times as large as the pitch of the interference fringe, so that the grid for alignment purpose is formed simultaneously with the formation of the LSI pattern by photolithographic technic.Type: GrantFiled: April 12, 1984Date of Patent: January 13, 1987Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Koichi Kugimiya, Takayoshi Matsumura, Taketoshi Yonezawa
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Patent number: 4622613Abstract: In a magnetoresistive (MR) effect head, electrodes for supplying a current to an MR element and a bias current conductor are not exposed at a contact surface of the MR head which is brought into sliding contact with a magnetic recording medium, thus preventing surface roughening of the contact surface.Type: GrantFiled: October 7, 1983Date of Patent: November 11, 1986Assignee: Matsushita Electric Industrials Co., Ltd.Inventors: Noboru Nomura, Kenji Kanai, Nobuyuki Kaminaka
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Patent number: 4558385Abstract: In a thin film magnetic head in which a lower magnetic layer is formed on a non-magnetic substrate through a non-magnetic layer, and a conductive layer constituting a signal winding and an upper magnetic layer are formed on the lower magnetic layer, the lower magnetic layer is formed within a recess formed in the non-magnetic layer. The recess may pass through the magnetic layer. The lower magnetic layer formed within the recess in the non-magnetic layer can considerably reduce raised portions associated with respective upper layers so that the thin film magnetic head can be improved in magnetic efficienty and yield rate during manufacture.Type: GrantFiled: September 4, 1984Date of Patent: December 10, 1985Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Nobuyuki Kaminaka, Kenji Kanai, Noboru Nomura
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Patent number: 4535376Abstract: A magnetic head includes at least a core for constituting a magnetic circuit and a magnetic gap formed in the core. The core comprises an amorphous magnetic metallic film formed on a non-magnetic high-resistance substrate so that one of the end faces of the non-magnetic high-resistance substrate and the amorphous magnetic metallic film may be brought into contact with a magnetic recording medium.Type: GrantFiled: March 15, 1982Date of Patent: August 13, 1985Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Eiichi Hirota, Kiyotaka Wasa
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Patent number: 4504540Abstract: The invention provides a thin film element which includes a thin film of an organic material, which has a multilayered structure of thin films, and which has a protective film of multilayered structure having films of at least two nonmagnetic materials, or of a thin film of a mixture of at least two nonmagnetic insulating materials. The protective film has a low internal stress, and the step coverage and adhesion strength thereof at edges of the high step portion is excellent.Type: GrantFiled: February 27, 1984Date of Patent: March 12, 1985Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Nobuyuki Kaminaka, Kenji Kanai, Noboru Nomura, Yuji Omata
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Patent number: 4490760Abstract: A thin-film magnetic head having a magnetic substrate made from ferrite, iron-aluminum-silicon alloy or like material, and an upper magnetic layer formed on the magnetic substrate with a lower magnetic layer and a conductive layer interposed therebetween. A portion of the upper magnetic layer is jointed to the magnetic substrate while another portion of the upper magnetic layer is jointed to the lower magnetic layer through a non-magnetic layer of SiO.sub.2 or like material constituting a magnetic gap. The lower magnetic layer, magnetic substrate, upper magnetic layer and the non-magnetic layer in combination form a closed magnetic circuit. A groove is defined between the lower magnetic layer and the magnetic substrate, and formed in the side surface of the magnetic substrate adapted to face a magnetic recording medium. The recess is filled with a non-magnetic material such as glass.Type: GrantFiled: January 18, 1982Date of Patent: December 25, 1984Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Nobuyuki Kaminaka, Kenji Kanai, Noboru Nomura
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Patent number: 4477794Abstract: The invention provides a magnetoresistive element which magnetostatically has magnetic anisotropy to control a domain structure and which eliminates Barkhousen noise that will cause abrupt movement of domain walls and irregular magnetization due to a change in the signal magnetic field, wherein a grating pattern is formed on at least one surface of a magnetoresistive film by a process in which a grating pattern is unidirectionally formed on the surface of a substrate and the magnetoresistive film of a ferromagnetic body is deposited thereon. Further, various magnetoresistive elements to which a novel bias method is applied are provided.Type: GrantFiled: August 10, 1982Date of Patent: October 16, 1984Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Kenji Kanai, Nobuyuki Kaminaka, Yuji Omata
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Patent number: 4422117Abstract: A thin film magnetic head has a substrate with thin film layers deposited thereon and a protector layer bonded by a bonding layer to the substrate, with the thin film layers interposed therebetween. The thin film layers includes components of an electromagnetic transducing means. The bonding layer is a glass having a working temperature at which a magnetic layer included in the thin film layers does not have the magnetic characteristics deteriorated to any substantial degree.The fusing of the glass for making the bonding layer is performed at a temperature below 450.degree. C.Type: GrantFiled: April 16, 1981Date of Patent: December 20, 1983Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Nomura, Kenji Kanai, Nobuyuki Kaminaka, Norimoto Nouchi
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Patent number: 4409632Abstract: A magnetic head arrangement includes a spiral coil made of a thin layer and having a central opening. The spiral coil is deposited on a first layer of magnetic material in an electrically insulated manner. The arrangement further includes a second layer of magnetic material having a width wider than that of the central opening of the spiral coil and deposited on the spiral coil in an electrically insulated manner. A portion of the second layer located in the central opening of the spiral coil is magnetically connected with the first layer and another portion of the second layer located outside the spiral coil is held above the first layer to form a predetermined gap.Type: GrantFiled: November 19, 1980Date of Patent: October 11, 1983Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kenji Kanai, Nobuyuki Kaminaka, Norimoto Nouchi, Noboru Nomura
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Patent number: 4402801Abstract: The invention provides a method for manufacturing a thin film magnetic head with a low step structure having a first nonmagnetic insulating layer, a lower magnetic layer, a nonmagnetic insulating layer of a thickness corresponding to a gap length, a second nonmagnetic insulating layer, a conductive layer which constitutes a coil, a third nonmagnetic insulating layer, and an upper magnetic layer, each of which is sequentially formed on a nonmagnetic conductive substrate in the order named. A conductive layer is formed in a recess whose bottom surface corresponds to an exposed upper surface of the nonmagnetic conductive substrate and which is formed in a predetermined portion of the first nonmagnetic insulating layer formed on the nonmagnetic conductive substrate. Thereafter, electroplating is performed to form a yoke portion of the lower magnetic layer in the recess by applying a voltage to the conductive layer as an electrode through the nonmagnetic conductive substrate.Type: GrantFiled: August 4, 1982Date of Patent: September 6, 1983Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yuji Omata, Nobuyuki Kaminaka, Kenji Kanai, Noboru Nomura
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Patent number: 4394699Abstract: A thin-film magnetic head employing a magneto-resistive element (MR element), which comprises a substrate, a layer of MR element deposited on said substrate and a conductor layer for supplying said MR element with an electric current in the longitudinal direction thereof. The substrate has at least two crystal axes in the plane parallel to the surface on which said magnetoresistive element is disposed. The respective coefficients of thermal expansion in the directions of said two crystal axes are different from each other.Type: GrantFiled: February 20, 1981Date of Patent: July 19, 1983Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Nobuyuki Kaminaka, Kenji Kanai, Norimoto Nouchi, Noboru Nomura
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Patent number: 4362767Abstract: A magnetic thin film is composed of an oxide of Fe.sub.x Co.sub.y Cu.sub.z having spinel structure wherein x, y and z represent respective atomic ratios, x+y+z=1, 0.50.ltoreq.x<0.95, 0.05<y.ltoreq.0.30 and 0.ltoreq.z<0.20. Such film exhibits high coercive force and good squareness.The film is made by vapor depositing a material containing at least one of Fe.sub.x Co.sub.y Cu.sub.z alloys and oxides thereof onto a substrate held at a temperature between 200.degree. and 500.degree. C. under an oxygen atmosphere with the pressure of above 10.sup.-4 Torr but below 10.sup.-3 Torr.Type: GrantFiled: November 21, 1979Date of Patent: December 7, 1982Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Norimoto Nouchi, Kenji Kanai, Nobuyuki Kaminaka, Noboru Nomura
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Patent number: 4354212Abstract: A magnetic head and a production method therefore in which permanent magnet films for applying a DC bias magnetic field Hd h to a magnetoresistive effect element film (MR element film) is arranged on both sides of the thickness dimension of the MR element film through at least a non-magnetic film therebetween. In making the MR element film thicker in order to reduce distortion, the DC bias magnetic field Hd b to be applied to the MR element film is also required to be increased. Unlike the prior art in which the above-mentioned requirement is met by increasing the thickness of the permanent magnet film under the thickness of the MR element film resulting in the problem of breakage of a film member above or under the thickness of the permanent magnet film, the invention further comprises a second permanent magnet film above the thickness of the MR element film without increasing the thickness of the first permanent magnet film.Type: GrantFiled: July 8, 1980Date of Patent: October 12, 1982Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Norimoto Nouchi, Kenji Kanai, Nobuyuki Kaminaka, Noboru Nomura