Abstract: A gate driving circuit includes driving stages. Each of the driving stages applies each of gate signals to each of gate lines of a display panel. A k-th (k is a natural number equal to or greater than 2) driving stage includes a first output transistor, a capacitor, and first and second control transistor. The first output transistor includes a control electrode connected to a first node, an input electrode receiving a clock signal, and an output electrode outputting a k-th gate signal. The capacitor is connected between the output electrode of the first output transistor and the control electrode of the first output transistor. The first control transistor applies a first control signal to a second node to control a voltage of the first node before the k-th gate signal is output. The second control transistor is diode-connected between the second node and the first node.

Abstract: A transistor and a liquid crystal display device having the same are provided. The transistor includes a first gate electrode disposed on a base substrate; a gate insulating layer disposed on the first gate electrode; a semiconductor layer disposed on the gate insulating layer, and including a channel area; a source electrode and a drain electrode connected to both ends of the semiconductor layer; a passivation layer configured to cover the semiconductor layer, the source electrode, and the drain electrode; and a second gate electrode disposed on the passivation layer, and partially overlapping the channel area in a direction from the drain electrode toward the source electrode.

Abstract: A display panel includes: a display panel including a plurality of gate lines, a plurality of data lines, and a plurality of pixels; a gate driver connected to the plurality of gate lines to apply a gate signal voltage; a data driver connected to the plurality of data lines to apply a data voltage and a negative data voltage; and a gate voltage divider for generating a gate signal voltage including gate-on and gate-off voltages to provided it to the gate driver. The gate voltage divider adjusts the gate-off voltage in accordance with a driving time of the display panel and a temperature of the display panel.

Abstract: Each stage of a gate driver includes a controlling part which increases an electric potential of a boosting line in response to a carry signal of a previous stage and decreases the electric potential of the boosting line in response to the carry signal of a next stage, a first output part which turns on in response to the increased electric potential of the boosting line and receiving a clock signal to output a gate signal of a present stage, and a second output part which turns on in response to the increased electric potential of the boosting line and receiving the clock signal to output the carry signal of the present stage. The boosting line of the present stage is disposed adjacent to a gate line which is connected to one of next stages following the present stage.

Abstract: A thin film transistor includes: a gate electrode; a source electrode; a drain electrode facing the source electrode; an oxide semiconductor layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode; and a gate insulating layer disposed between the gate electrode and the source electrode or between the gate electrode and the drain electrode, wherein when a signal applied to the gate electrode is a turnoff signal, a voltage applied to the gate electrode has a negative value.

Abstract: A gate driving circuit including first through (N)th stages is provided. An (M)th stage of the first through (N)th stages includes a pull-up control part, a pull-up part, a carry holding part, a carry part, and a first pull-down part. The pull-up control part applies a second node signal of a second node to a first node in response to the second node signal. The pull-up part outputs a clock signal as an (M)th gate output signal in response to the first node signal. The carry holding part applies the (M)th gate output signal to the second node in response to the (M)th gate output signal. The carry part outputs the clock signal as an (M)th carry signal in response to the first node signal. The first pull-down part pulls down the (M)th gate output signal to a first off voltage.

Abstract: A method of processing touch-image data includes calculating a plurality of motion vectors using a plurality of low-resolution touch-image data frames, aligning sensing data corresponding to an object detected in the low-resolution touch-image data frames using the motion vectors to generate an overlapped touch-image data frame, generating high-resolution data corresponding to the detected object using the overlapped touch-image data frame and detecting the touch position and generating touch position data of the detected object using the high-resolution touch position data corresponding to the detected object.

Abstract: A method of processing touch-image data includes calculating a plurality of motion vectors using a plurality of low-resolution touch-image data frames, aligning sensing data corresponding to an object detected in the low-resolution touch-image data frames using the motion vectors to generate an overlapped touch-image data frame, generating high-resolution data corresponding to the detected object using the overlapped touch-image data frame and detecting the touch position and generating touch position data of the detected object using the high-resolution touch position data corresponding to the detected object.

Abstract: Provided is an optical-sensor-equipped display device, in which a lens structure for improving a light condensing ratio regarding the condensation of light toward light-receiving elements and widening a dynamic range is realized, without an increase in its thickness. This display device includes a liquid crystal display panel (1) and a backlight unit (2) that irradiates the liquid crystal display panel (1) with light from a back face side thereof.

Abstract: The present invention includes a die pad; signal leads, ground connection leads connected to the die pad; a semiconductor chip including electrode pads for grounding; metal thin wires, and an encapsulating resin for encapsulating the die pad and the semiconductor chip and encapsulating the signal leads and the ground connection lead such that lower portions of the signal leads and the ground connection lead are exposed as external terminals. The ground connection lead is connected to the electrode pad for grounding, so that the resin-encapsulated semiconductor device is electrically stabilized. Furthermore, interference between high frequency signals passing through the signal leads can be suppressed by the die pad and the ground connection leads.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: A display panel substrate includes a plurality of pixels, a pixel in the display panel substrate including a PIN diode for conducting therethrough a different electric current in accordance with an amount of light received by the light receiving element, a first inorganic insulating film formed on the PIN diode, a line formed on or above the first inorganic insulating film and electrically connected to the PIN diode, an organic insulating film formed on or above the line, a transparent pixel electrode formed on the organic insulating film, and a transparent cover electrode provided at such a position that the transparent electrode is located between the organic insulating film and the first inorganic insulating film and formed to cover at least a part of an I-layer of the PIN diode.

Abstract: A solid-state image capturing apparatus includes a pixel array in which a plurality of pixels are arranged in a matrix, where each of the pixels includes: a photodiode for obtaining a signal charge by a photoelectric conversion of an incident light; and an amplifying transistor for the signal charge obtained at the photodiode, and where the amplifying transistor is configured in such a manner that a gate area of the amplifying transistor is defined to be larger than a gate area of other transistors that configure the pixel.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: A solid-state image capturing element according to the present invention is provided, in which one or a plurality of light receiving sections for photoelectrically converting an incident light to generate a signal charge is provided on a surface of a semiconductor area or a surface of a semiconductor substrate and a peripheral circuit with a transistor is provided, where a reflection preventing film provided above the light receiving sections and a gate sidewall film of the transistor are formed with a common nitride film that is formed simultaneously.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

Abstract: A semiconductor-element mounting substrate is a substrate for mounting a semiconductor element, and includes a substrate body. The substrate body has a mounting surface, and the center portion of the mounting surface is provided with a die pattern. Through conductors are provided in a portion of the substrate body located outside the die pattern to penetrate the substrate body in the thicknesswise direction. First terminals and second terminals are connected to the through conductors, respectively. The first terminals each extend toward the outer edge of the mounting surface, and they are electrically connected to the semiconductor element. The second terminals are provided on a surface of the substrate body opposite to the mounting surface.

Abstract: A comparing circuit of the present invention includes: a charging and discharging circuit to charge a capacitor with charging current and discharge the capacitor with discharging current alternately in response to a switch of an input pulse signal; a comparator circuit to compare a capacitor-voltage (Csig) of the capacitor with a first threshold voltage (Vth1) and the capacitor-voltage (Csig) with a second threshold voltage (Vth2), which is higher than the first threshold voltage, to generate a pulse signal responsive to a result of this comparison, and to supply an output-signal generating circuit with the pulse signal to switch a level of an output pulse-signal; and a logical operation circuit to adjust a value of the charging current and a value of the discharging current by generating a signal that is based on the pulse signal and is to adjust the value of the charging current and the value of the discharging current of the charging and discharging circuit and supplying the charging and discharging circui

Abstract: A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

Abstract: A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.