Abstract: In a semiconductor device, the reset command input process may be executed by a simple method and circuit in a short period of time when a reset command is inputted compared to conventional art. A control circuit for the semiconductor device is adapted to control a clock generator for generating a system clock having a changeable frequency, wherein, in a normal operating mode of the semiconductor device, the control circuit changes the frequency of the system clock generated by the clock generator from a first frequency to a second frequency that is higher than the first frequency according to a reset command, and performs an interrupt process on the semiconductor device, so as to enter a reset sequence mode from the normal operating mode.

Abstract: The disclosure provides an internal power supply voltage auxiliary circuit for an internal power supply voltage generating circuit, wherein the internal power supply voltage generating circuit includes: a differential amplifier, comparing an internal power voltage supplied to a loading circuit with a predetermined reference voltage, and outputting a control voltage from an output terminal; and a driving transistor, driving an external power voltage according to the control voltage. The internal power supply voltage auxiliary circuit includes: a time sequence detecting circuit, detecting a transition of a data signal, generating and outputting a detecting signal; and an internal power voltage auxiliary supplying circuit, auxiliary supplying a current for the loading circuit based on the detecting signal. Therefore, it is possible to output an internal power voltage stably, while power consumption would not increase greatly, even when being used in the semiconductor memory device with the DDR.

Abstract: A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor can be adjusted with higher precision as compared to the conventional art. The MOM capacitor includes a plurality of MOM (Metal-Oxide-Metal) capacitors respectfully formed by pairs of metal electrodes facing each other through an insulating film on a substrate. The MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor; and at least one switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal, wherein a capacitance of the MOM capacitor circuit is adjusted by turning on/off the switch element.

Abstract: A capacitor circuit formed by a plurality of capacitors using metal electrodes formed on a substrate is provided, such that the capacitance of the capacitor can be adjusted with higher precision as compared to the conventional art. The MOM capacitor includes a plurality of MOM (Metal-Oxide-Metal) capacitors respectfully formed by pairs of metal electrodes facing each other through an insulating film on a substrate. The MOM capacitor circuit is formed by at least one capacitor element in a manner that each of the pairs of the metal electrodes of the MOM capacitors is connected to a first terminal and a second terminal through a connecting conductor; and at least one switch element, connected to the plurality of metal electrodes and at least one of the first terminal and the second terminal, wherein a capacitance of the MOM capacitor circuit is adjusted by turning on/off the switch element.

Abstract: In a semiconductor device, the reset command input process may be executed by a simple method and circuit in a short period of time when a reset command is inputted compared to conventional art. A control circuit for the semiconductor device is adapted to control a clock generator for generating a system clock having a changeable frequency, wherein, in a normal operating mode of the semiconductor device, the control circuit changes the frequency of the system clock generated by the clock generator from a first frequency to a second frequency that is higher than the first frequency according to a reset command, and performs an interrupt process on the semiconductor device, so as to enter a reset sequence mode from the normal operating mode.

Abstract: A negative reference voltage generating circuit generating a negative reference voltage is provided, including a differential amplifier, a first diode, second diodes, and a third resistor. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal, and is driven by a positive and a negative power voltages. The output terminal is connected with the non-inverting input terminal via a first resistor and connected with the inverting input terminal via a second resistor. The first diode includes a cathode connected with the non-inverting input terminal of the differential amplifier and an anode connected with a ground. The second diodes respectively include a cathode connected with a predetermined connection point and an anode connected with the ground, and are connected in parallel. The third resistor is connected between the connection point and the inverting input terminal of the differential amplifier.

Abstract: A negative reference voltage generating circuit generating a negative reference voltage is provided, including a differential amplifier, a first diode, second diodes, and a third resistor. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal, and is driven by a positive and a negative power voltages. The output terminal is connected with the non-inverting input terminal via a first resistor and connected with the inverting input terminal via a second resistor. The first diode includes a cathode connected with the non-inverting input terminal of the differential amplifier and an anode connected with a ground. The second diodes respectively include a cathode connected with a predetermined connection point and an anode connected with the ground, and are connected in parallel. The third resistor is connected between the connection point and the inverting input terminal of the differential amplifier.

Abstract: The disclosure provides an internal power supply voltage auxiliary circuit for an internal power supply voltage generating circuit, wherein the internal power supply voltage generating circuit includes: a differential amplifier, comparing an internal power voltage supplied to a loading circuit with a predetermined reference voltage, and outputting a control voltage from an output terminal; and a driving transistor, driving an external power voltage according to the control voltage. The internal power supply voltage auxiliary circuit includes: a time sequence detecting circuit, detecting a transition of a data signal, generating and outputting a detecting signal; and an internal power voltage auxiliary supplying circuit, auxiliarily supplying a current for the loading circuit based on the detecting signal. Therefore, it is possible to output an internal power voltage stably, while power consumption would not increase greatly, even when being used in the semiconductor memory device with the DDR.

Abstract: A negative reference voltage generating circuit includes a clamp-type reference voltage circuit and a differential amplifier. The clamp-type reference voltage circuit is connected between a node of a first negative voltage which is equal to or lower than the ground voltage and a node of a second negative voltage which is lower than the first negative voltage, and is formed by connecting a first circuit and a second circuit in parallel. The differential amplifier amplifies the difference between a node voltage in the first circuit and a node voltage in the second circuit, and outputs a negative reference voltage.

Abstract: A negative reference voltage generating circuit includes a clamp-type reference voltage circuit and a differential amplifier. The clamp-type reference voltage circuit is connected between a node of a first negative voltage which is equal to or lower than the ground voltage and a node of a second negative voltage which is lower than the first negative voltage, and is formed by connecting a first circuit and a second circuit in parallel. The differential amplifier amplifies the difference between a node voltage in the first circuit and a node voltage in the second circuit, and outputs a negative reference voltage.

Abstract: A non-volatile semiconductor device includes: memory strings formed by series connection of memory cells respectively connected to word lines, wherein each memory string is connected between a bit line and a source line via first and second select gate transistors; and a control circuit controlling the first and second select gate transistors, such that when voltage of the word line is raised to a predetermined value for data readout from the memory cell, a first status where the first select gate transistor is turned on and the second select gate transistor is turned off and second status where the first select gate transistor is turned off and the second select gate transistor is turned on are generated alternately.

Abstract: A non-volatile semiconductor device includes: memory strings formed by series connection of memory cells respectively connected to word lines, wherein each memory string is connected between a bit line and a source line via first and second select gate transistors; and a control circuit controlling the first and second select gate transistors, such that when voltage of the word line is raised to a predetermined value for data readout from the memory cell, a first status where the first select gate transistor is turned on and the second select gate transistor is turned off and second status where the first select gate transistor is turned off and the second select gate transistor is turned on are generated alternately.

Abstract: A virtual ground type semiconductor memory device comprises: a memory cell array in which nonvolatile memory cells each including a first electrode, a pair of second electrodes, and a charge retention part are arranged in row and column directions like a matrix; a read circuit for selecting a pair of the first and second bit lines connected to a selected memory cell to be read, applying first and second read voltages to the selected first and second bit lines, respectively, and detecting a magnitude of a memory cell current flowing in the selected memory cell, at the time of reading; a voltage applying means for applying the second read voltage to a second adjacent bit line adjacent to the selected second bit line on the opposite side of the first bit line; and a short-circuit means for short-circuiting the selected second bit line and the second adjacent bit line.

Abstract: A virtual ground type semiconductor memory device comprises: a memory cell array in which nonvolatile memory cells each including a first electrode, a pair of second electrodes, and a charge retention part are arranged in row and column directions like a matrix; a read circuit for selecting a pair of the first and second bit lines connected to a selected memory cell to be read, applying first and second read voltages to the selected first and second bit lines, respectively, and detecting a magnitude of a memory cell current flowing in the selected memory cell, at the time of reading; a voltage applying means for applying the second read voltage to a second adjacent bit line adjacent to the selected second bit line on the opposite side of the first bit line; and a short-circuit means for short-circuiting the selected second bit line and the second adjacent bit line.

Abstract: A semiconductor memory device comprises: a plurality of memory elements; at least one bit line, wherein a memory operation is performed via at least a portion of the bit line with respect to at least one of the plurality of memory elements; and a load resistance regulating circuit for changing a resistance value to reduce or eliminate a difference in bit line load resistance depending on a position of the memory element.

Abstract: A nonvolatile semiconductor memory device comprises a ground voltage applying circuit for applying a ground voltage to a selected source line connected to a source of a selected memory cell, a reading circuit for supplying a reading current to the selected memory cell via a selected bit line and detecting data of the selected memory cell, a bit line selection circuit for selecting the selected bit line and connecting it to the reading circuit. The bit line selection circuit can select an additional bit line group located at the opposite side of the selected source line with respect to the selected bit line and connect it to the reading circuit and a current path from the reading circuit branches into current paths to the selected bit line and respective bit lines of the additional bit line group at the side of the reading circuit from the bit line selection circuit.

Abstract: A semiconductor memory device having a virtual ground line type memory array structure includes a readout circuit for selecting a pair of selected bit lines connected to the source and the drain of a memory cell to be read, applying a predetermined voltage to between the paired selected bit lines, and sensing a memory cell current flowing through the memory cell to be read, and a counter potential generation circuit for generating from an intermediate node potential, which is higher than any level of the potential on the selected bit lines and supplied from an intermediate node on a current path for feeding the memory cell current in the readout circuit, a counter potential which varies in the same direction as of the intermediate node potential depending on the memory cell current so that its variation is greater than that of the intermediate node potential, wherein the counter potential is applied to an unselected bit line allocated next to one at a high level of the paired selected bit lines.

Abstract: A program product is used by a control computer of an optical disc apparatus. The apparatus accesses plural types of optical discs. The control computer recognizes one type of optical disc out of the plural types of optical discs based on history information including a type of optical disc used in times past according to the program. The control computer then judges whether the type of set optical disc is identified with the recognized type of optical disc.

Abstract: A semiconductor readout circuit reads out a potential of each of plural data lines by comparing the potential with a potential of a common reference data line, using a sense amplifier provided for each of the data lines. This semiconductor readout circuit has a current control circuit provided for each of the data lines. The current control circuit controls the potential of the corresponding one of the data lines so that a potential difference between the potential of the corresponding data line and the potential of the reference data line can be reduced based on an output as to the potential difference detected by the sense amplifier.

Abstract: A semiconductor memory device having a virtual ground line type memory array structure includes a readout circuit for selecting a pair of selected bit lines connected to the source and the drain of a memory cell to be read, applying a predetermined voltage to between the paired selected bit lines, and sensing a memory cell current flowing through the memory cell to be read, and a counter potential generation circuit for generating from an intermediate node potential, which is higher than any level of the potential on the selected bit lines and supplied from an intermediate node on a current path for feeding the memory cell current in the readout circuit, a counter potential which varies in the same direction as of the intermediate node potential depending on the memory cell current so that its variation is greater than that of the intermediate node potential, wherein the counter potential is applied to an unselected bit line allocated next to one at a high level of the paired selected bit lines.