Abstract: In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with its pores having been sealed at the surface. This substrate can be produced by a process comprising the steps of heat-treating the silicon substrate 11 having a porous region, to seal pores at the surface of the porous region 13, and forming a single-crystal compound-semiconductor layer 14 by heteroepitaxial growth on the porous region having the pores sealed by the heat treatment.Single-crystal compound semiconductor films with less crystal defects can be formed on large-area silicon substrates in a high productivity, a high uniformity, a high controllability and a great economical advantage.

Abstract: A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.

Abstract: A printing apparatus and a printing processing method are provided in which content of print information is discriminated. A variable is initialized if the result of discrimination indicates the start of a printing job, and the variable is counted up of the result of discrimination indicates start of the next page. In a case where trouble such as jamming occurs during processing of this print information, at which page from the start of printing this trouble occurred is calculated from the variable, and the page number obtained is outputted upon being incorporated in information indicative of the fact that trouble has occurred. As a result, it is possible to output information indicating at which page, from the start of a printing job, trouble such as jamming occurred.

Abstract: Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non-porous substrate, and a subsequent step of making the substrate porous.

Abstract: A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.

Abstract: A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

Abstract: An information processing apparatus comprises acquiring means for acquiring a memory capacity of a printer connected through a bi-directional interface, compare means for comparing the memory capacity acquired by the acquiring means with a capacity of data to be outputted to the printer, and determination means for determining a memory size of a memory of the printer in accordance with the comparison result.An output apparatus comprises receiving means for receiving memory size information determined by a capacity of data to be outputted from an information processing apparatus connected through a bi-directional interface and a capacity of a memory for storing the data, from the information processing apparatus, and setting means for dynamically setting a size of the memory for storing the data in accordance with the memory size information received by the receiving means.

Abstract: A method for preparing a semiconductor member comprises:forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer;bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; andetching to remove the porous silicon layer by immersing in an etching solution.

Abstract: Disclosed is an image recording apparatus which records received printing data as n-tone image data under ordinary conditions but which is capable also of recording the data as m-tone (m<n) image data. When the tone image based upon the received printing data is recorded on a recording medium, the memory capacity usable for recording the image is compared with the memory capacity needed for recording, and it is decided, based upon the comparison, whether to record the image in n tones or m tones.

Abstract: A semiconductor device having a substrate with an insulating surface and a non-porous semiconductor region bonded to the body of the device. A porous semiconductor region on the surface of the substrate was removed by etching.

Abstract: An output apparatus processes data input selectively from a plurality of host computers and outputs a data processing state. The output apparatus includes an input structure that inputs data selectively from the plurality of host computers, a discriminating device that discriminates from which one of the plurality of host computers the input data is supplied, and an informing device for informing an operator of the output apparatus of the data processing state of the output apparatus in response to a discrimination by the discriminating device. An output method performs the operations of the output apparatus, and can be performed by using a memory medium that stores a program used in a programmable output apparatus. The output apparatus may use a host interface, or a plurality of host interfaces, for the input structure.

Abstract: A crystal article comprises a substrate and single crystals provided on said substrate, with the shape of the contacted surface of said single crystals with said substrate being n-gonal (provided that n.gtoreq.5) or circular.

Abstract: A method for forming a crystal article comprises forming a plurality of monocrystals with a desired size at a desired position on a substrate comprising an amorphous insulating material and having a non-nucleation surface by crystal forming treatment, wherein prior to the crystal forming treatment a plurality of concavities with a desired size and form are formed respectively in a region to be covered with a single monocrystal on the substrate, and a single monocrystal is formed to full the plurality of concavities by the crystal forming treatment and thereafter the monocrystal is flattened by removing it to the same level as the upper surface of the substrate.

Abstract: A method of forming crystals is adapted to grow a single-crystal by subjecting a substrate having a free surface with mutually adjacent non-nucleation and nucleation surfaces to a crystal forming process. Each nucleation surface consists of an amorphous material, having a greater nucleation density than the non-nucleation surface, with respect to a material with which the single-crystal will be formed, and having an area sufficiently small to permit only one nucleus to be generated, which will grow into the single crystal. The non-nucleation surfaces are made of a material having a higher etching rate than the material of which the nucleation surfaces are made. After a process of implanting ions in the entire surface of the substrate, the resultant substrate is subjected to an etching process whereby the non-nucleation surface material alone is selectively etched to remove the unnecessarily ion-implanted portions of the material.

Abstract: A crystal article comprises a substrate, a plurality of single crystals provided on said substrate with adjacent single crystals contacting each other and a void generation preventive body filling the portion surrounded by said plurality of single crystals.

Abstract: A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.

Abstract: A method of forming a crystal semiconductor by depositing on a substrate with a depression a first layer with a higher nucleation density and a smaller mechanical abrasion rate than a second layer deposited on the first layer and forming a nucleation surface by removing a minute portion of the second layer in the area of the depression, thereby uncovering the first layer. The uncovered portion of the first layer is sufficiently minute so as to form only a single nucleus from which a monocrystal is grown by a crystal formation process from the single nucleus. The monocrystal is allowed to grow beyond the area of the depression. An abrasive grain mechanically polishes the grown monocrystal to a level corresponding to the surface of the first layer, thereby flattening the monocrystal.