Abstract: A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to form an ion-implanted layer in the Si substrate, and a buried Si oxide layer forming step of forming an Si oxide layer buried below the single-crystal Si layer on the principal surface side, by a heat treatment of the Si substrate.

Abstract: The present invention relates to the shaver capable of cutting deeply, provided with the outer blade having a plurality of the hair-guiding ports and the inner blade being adjacently located to the inner part of the outer blade and relatively moving against the said inner part, serving like an electric shaver of rotation or motion, which consists in going back and forth adjacently, wherein there is provided an escaping gap for taking hairs out in one part between the outer and inner blades, thus hooking the hairs guided into the gap, on the tip of the inner blade or pinching them inside the escaping gap and afterward, taking out the hairs and beards from the root of hairs and when the hairs move to the region without any escaping gap, they will be cut in the deep location.

Abstract: The present invention provides a semiconductor substrate comprising a non-porous monocrystalline layer with decreased crystal defects which is formed on a porous silicon layer, and a method of producing the substrate. The method of producing the substrate comprises a heat treatment step of heat-treating a porous layer in an atmosphere not containing a silicon type gas, and a step of growing a non-porous monocrystalline silicon layer on the porous silicon layer, wherein the heat treatment step is executed such that the etched thickness of silicon is 2 nm or less and that the rate of change r for the Haze value of the porous silicon layer defined by (the Haze value after the heat treatment)/(the Haze value before the heat treatment) satisfies the relationship between 1≦r≦3.5.

Abstract: To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.

Abstract: A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatment utilizing the ion-implantation layer. An SOI substrate having a single-crystal silicon layer (SOI layer) which is formed on the BOX layer and has a remarkably reduced number of defects such as COPs is obtained.

Abstract: A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.

Abstract: Packaging for sports equipment has an enclosure and a hologram formed on at least a portion thereof for diffusely reflecting incident light. A marking layer is formed on the hologram and of an organic ink, an inorganic ink, or an ink containing a dye or pigment having the color attributes of lightness, saturation and hue, at least one of which varies due to interference with diffusely reflected light from the hologram. Alternatively, the marking layer is formed on the first hologram by laminating one or more second hologram layers thereon. This construction gives the packaging a highly decorative and elegant appearance.

Abstract: A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Abstract: A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.

Abstract: Packaging for sports equipment has an enclosure and a hologram formed on at least a portion thereof for diffusely reflecting incident light. A marking layer is formed on the hologram and of an organic ink, an inorganic ink, or an ink containing a dye or pigment having the color attributes of lightness, saturation and hue, at least one of which varies due to interference with diffusely reflected light from the hologram. Alternatively, the marking layer is formed on the first hologram by laminating one or more second hologram layers thereon. This construction gives the packaging a highly decorative and elegant appearance.

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Abstract: There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bonded, and then the second substrate member is separated from the first substrate member at the interface of a first layer and a second layer formed on the main surface of the first substrate member, whereby the second layer is transferred onto the second substrate member. In the separation, the separation position at the interface of the first and the second layers is ensured by varying the porosity of a porous Si layer, forming an easily separable plane by the coagulation of pores in porous Si, effecting ion implantation to the interface or utilizing a heteroepitaxial interface.

Abstract: A method of producing a semiconductor base member that can be used as a Silicon on Insulator (SOI) wafer is presented. To produce an SOI wafer, it is necessary to prepare a base member having a porous layer upon which a non porous layer is formed. To make the pore size distribution of a porous layer uniform, a surface comprising atom steps and terraces is formed on the surface of a silicon base material and made porous without eliminating the steps and terraces, and then a nonporous semiconductor single-crystal film is formed thereon.

Abstract: A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

Abstract: An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.

Abstract: In a process for producing a semiconductor substrate, comprising sealing surface pores of a porous silicon layer and thereafter forming a single-crystal layer on the porous silicon layer by epitaxial growth, intermediate heat treatment is carried out after the sealing and before the epitaxial growth and at a temperature higher than the temperature at the time of the sealing. This process improves crystal quality of the semiconductor substrate having the single-crystal layer formed by epitaxial growth and improves smoothness at the bonding interface when applied to bonded wafers this process enables the detection of the smaller particles on the surface by a laser light scattering method.

Abstract: A manufacturing method excellent in controllability, productivity and economics of a high-quality SOI wafer and a wafer manufactured by that method are provided. After wafer bonding, separation is made on an interface of a high porosity layer in a porous region including a low porosity layer and the high porosity layer in a surface formed on a main surface side of a first Si substrate 2 to transfer a non-porous layer onto a second substrate. After separation at the high porosity layer, a residual low porosity thin layer is made non-porous by a smoothing process such as hydrogen annealing without using selective etching.

Abstract: A process for producing a semiconductor substrate is provided which comprises providing a first member having a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer grown thereon, laminating the nonporous silicon layer of the first member onto a second member with interposition of an insulation layer provided on at least one lamination face of the first member and the second member, and removing the porous monocrystalline silicon layer by etching, wherein the nonporous monocrystalline silicon layer is grown at a low growth rate controlled such that the density of remaining pores on the crystal growth face is not more than 1000/cm.sup.2 at the time when the nonporous silicon layer has grown to a thickness corresponding to the diameter of the pores of the porous monocrystalline silicon layer.

Abstract: A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.