Abstract: A method of manufacturing an electron beam apparatus having an airtight container with electron-emitting devices contained therein and spacers provided in the airtight container comprising the coating step of providing a film on a spacer substrate to be the spacers, and characterized in that the coating step includes the applying step of applying liquid film material by emitting from an emitting portion in a predetermined direction to a part of a surface of the spacer substrate facing the emitting portion.

Abstract: In a spacer having concave/convex portions to prevent short-time charging in a flat type image forming apparatus in which an electron source substrate and an anode substrate are arranged so as to face each other through the spacer, the charging upon long-time driving due to the concave/convex portions is suppressed. In the spacer in which the surface of an insulating substrate having a rough surface is coated with a high resistance film, the high resistance film has double layers of a low resistance region locating on the substrate side and a high resistance region locating on the front surface side, and a thickness (t) of high resistance film on the slant surface of each of the concave/convex portions and a thickness (s) of high resistance region are set to (t?dp+??s) for the primary electron penetration length (dp) and the ionization electron diffusion length (?).

Abstract: The present invention relates to a method for deuteration of a compound represented by the general formula [1]: R1—X—R2??[1] wherein, R1 represents an alkyl group or an aralkyl group, which may have a carbon-carbon double bond and/or triple bond; R2 represents an alkyl group which may have a carbon-carbon double bond and/or triple bond, an aryl group, an aralkyl group, an alkoxy group, an aryloxy group or a hydroxyl group; X represents a carbonyl group or a hydroxylmethylene group, R1 and R2 may form an alicyclic ring together with a carbon atom contained in X; provided that R2 represents an alkyl group which may have a carbon-carbon double bond and/or triple bond, an aryl group or an aralkyl group when X is a hydroxylmethylene group, comprising reacting the compound represented by the general formula [1] with a heavy hydrogen source in the co-presence of an activated catalyst selected from a palladium catalyst, a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt

Abstract: A pressure detection switch includes a membrane switch and a key pad arranged on the membrane switch. The membrane switch includes first and second insulation sheets arranged to face each other. An electric circuit, which includes a first electrode and a voltage-dividing resistor, and a resist film, which protects the electric circuit, are formed on the lower surface of the first insulation sheet and above the second insulation sheet. The resist film has an opening through which the voltage-dividing resistor is exposed from the lower surface of the first insulation sheet.

Abstract: The present invention relates to a method for deuteration of a heterocyclic ring, which comprises subjecting a compound having a heterocyclic ring to sealed refluxing state in a deuterated solvent in the presence of an activated catalyst selected form a palladium catalyst, a platinum catalyst, a rhodium catalyst, a ruthenium catalyst, a nickel catalyst and a cobalt catalyst. In accordance with a method of the present invention, a hydrogen atom belonging to a heterocyclic ring of a compound having a heterocyclic ring can be very efficiently deuterated because temperature of deuteration reaction can be maintained at higher than boiling point of the solvent. Further, a method for deuteration of the present invention can be applied widely to deuteration of various compounds having a heterocyclic ring which are liable to decomposition under supercritical conditions or acidic conditions, leading to industrial and efficient deuteration of a compound having a heterocyclic ring.

Abstract: A spacer on which static electricity is restricted and an electron beam apparatus in which the spacer is provided. In the electron beam apparatus comprising an electron source provided with electron emission devices, a face plate provided with anodes and spacers installed between the electron source and the face plate, unevenness is formed on the surface of the spacer substrate, and further a thin film which has a smaller thickness than a roughness. This makes possible the restriction of incident angle multiplication coefficient for the primary electrons whose energy is lower than the second cross-point energy of a resistive film. The electron beam apparatus provided with the above spacer is excellent in display definition and long-term reliability since the display of light emission points and the creeping discharge accompanying the static electricity can be restricted due to the spacer.

Abstract: An electron beam apparatus including a hermetic container provided with an electron source, in which, when a first member is arranged in the hermetic container, at least part of the first member is coated with a film, and the film is configured in such a manner that it includes two regions, a first region and a second region different in electron density from the first region and the second region forms a network in the first region. This three-dimensional network structure allows a member being charged to be preferably controlled. Thereby, it is possible to control the effects of a member being charged which is used in an electron beam apparatus.

Abstract: A method of manufacturing a spacer having a low-resistance film without using any exhaust device, and being interposed between a first substrate having an image forming member and a second substrate having an electron-emitting device. The method including the steps of preparing a spacer substrate with an edge including a tapered, chamfered or arcuated portion, preparing a liquid comprising a dispersed conductive material or dissolved conductive material, dipping the edge into the liquid, and drying and/or baking the spacer substrate after the dipping step.

Abstract: An electron beam apparatus including a hermetic container provided with an electron source, in which, when a first member is arranged in the hermetic container, at least part of the first member is coated with a film, and the film is configured in such a manner that it includes two regions, a first region and a second region different in electron density from the first region and the second region forms a network in the first region. This three-dimensional network structure allows a member being charged to be preferably controlled. Thereby, it is possible to control the effects of a member being charged which is used in an electron beam apparatus.

Abstract: The present invention is concerned with an electron beam apparatus comprising: a hermetic container; an electron source disposed within the hermetic container; and a spacer; wherein the spacer includes at least a region where a layer containing fine particles exists, a sheet resistance measured at the surface of the region of the spacer is 107 ?/? or more, and the fine particles are 1000 ? or less in the average diameter of the particles and includes at least metal elements. The electron beam apparatus exhibits the excellent display quality which suppresses the displacement of the light emission point with the charge and the creeping discharge, and the long-period reliability.

Abstract: A spacer on which static electricity is restricted and an electron beam apparatus in which the spacer is provided. In the electron beam apparatus comprising an electron source provided with electron emission devices, a face plate provided with anodes and spacers installed between the electron source and the face plate, unevenness is formed on the surface of the spacer substrate, and further a thin film which has a smaller thickness than a roughness. This makes possible the restriction of incident angle multiplication coefficient for the primary electrons whose energy is lower than the second cross-point energy of a resistive film. The electron beam apparatus provided with the above spacer is excellent in display definition and long-term reliability since the displacement of light emission points and the creeping discharge accompanying the static electricity can be restricted due to the spacer.

Abstract: A spacer on which static electricity is restricted and an electron beam apparatus in which the spacer is provided. In the electron beam apparatus comprising an electron source provided with electron emission devices, a face plate provided with anodes for accelerating the electrons emitted from the electron source and spacers installed between the electron source and the face plate, unevenness is formed on the surface of the spacer substrate, and further a thin film whose thickness is smaller than the height difference of the above uneven structure is formed thereon. This makes possible the restriction of incident angle multiplication coefficient for the primary electrons whose energy is lower than the second cross-point energy of a highly resistive film, and the value m0 in the following formula becomes 10 or less.

Abstract: The present invention provides a method of producing a spacer provided between a first substrate and a second substrate on which an electron emitting device is arranged, the method including the step of forming a film on at least a portion of at least one surface of the spacer. The film forming step includes the step of preparing a bundle of a plurality of spacer base members, and the step of coating a film material on the bundle, and wherein the bundle on which the film material is coated has a mask layer for covering at least a film non-formation portion near the film formation portion of each of the plurality of spacer base members of the bundle.

Abstract: An electron beam emitting apparatus has a first plate with an electron-emitting device 15, and an electrode 8 opposed to the first plate, and the electrode 8 is applied a potential to accelerate electrons emitted from the electron-emitting device 15. In the electron beam emitting apparatus, a potential defining region 9 is provided a surface of the first plate on the electrode 8 side and a first potential defining region forming the potential defining region 9 is provided in a projective area of the electrode 8 onto the potential defining region 9; and, where d represents a distance between the electrode 8 and the potential defining region 9, an additional potential defining region is defined in the range of 0.83d in all directions parallel to the first plate from the edge of the projective area of the electrode 8 onto the potential defining region 9. This stabilizes trajectories of electrons and permits an excellent image to be formed without deviation of light emission positions.

Abstract: The present invention is concerned with an electron beam apparatus comprising: a hermetic container; an electron source disposed within the hermetic container; and a spacer; wherein the spacer includes at least a region where a layer containing fine particles exists, a sheet resistance measured at the surface of the region of the spacer is 107 &OHgr;/□ or more, and the fine particles are 1000 Å or less in the average diameter of the particles and includes at least metal elements. The electron beam apparatus exhibits the excellent display quality which suppresses the displacement of the light emission point with the charge and the creeping discharge, and the long-period reliability.

Abstract: An electron beam emitting apparatus has a first plate with an electron-emitting device 15, and an electrode 8 opposed to the first plate, and the electrode 8 is applied a potential to accelerate electrons emitted from the electron-emitting device 15. In the electron beam emitting apparatus, a potential defining region 9 is provided a surface of the first plate on the electrode 8 side and a first potential defining region forming the potential defining region 9 is provided in a projective area of the electrode 8 onto the potential defining region 9; and, where d represents a distance between the electrode 8 and the potential defining region 9, an additional potential defining region is defined in the range of 0.83d in all directions parallel to the first plate from the edge of the projective area of the electrode 8 onto the potential defining region 9. This stabilizes trajectories of electrons and permits an excellent image to be formed without deviation of light emission positions.

Abstract: The present invention is concerned with an electron beam apparatus comprising: a hermetic container; an electron source disposed within the hermetic container; and a spacer; wherein the spacer includes at least a region where a layer containing fine particles exists, a sheet resistance measured at the surface of the region of the spacer is 107 &OHgr;/□ or more, and the fine particles are 1000 Å or less in the average diameter of the particles and includes at least metal elements. The electron beam apparatus exhibits the excellent display quality which suppresses the displacement of the light emission point with the charge and the creeping discharge, and the long-period reliability.

Abstract: This invention has as its object to easily form a low-cost spacer having a low-resistance film (electrode) without using any exhaust device. This invention provides a method of manufacturing a spacer interposed between the first substrate having an image forming member and the second substrate having an electron-emitting device, including the steps of preparing a glass preform, stretching part of the glass preform while heating the glass preform by a heater, and cutting the stretched glass preform into a desired length, wherein the stretching step has the step of feeding the glass preform at a velocity v1 toward the heater, and stretching the glass preform heated by the heater in a direction away from the heater at a velocity v2, and the velocities v1 and v2 have different speeds and satisfy a relation: v1<v2.

Abstract: This invention has as its object to easily form a low-cost spacer having a low-resistance film (electrode) without using any exhaust device. This invention provides a method of manufacturing a spacer interposed between the first substrate having an image forming member and the second substrate having an electron-emitting device, including the steps of preparing a glass preform, stretching part of the glass preform while heating the glass preform by a heater, and cutting the stretched glass preform into a desired length, wherein the stretching step has the step of feeding the glass preform at a velocity v1 toward the heater, and stretching the glass preform heated by the heater in a direction away from the heater at a velocity v2, and the velocities v1 and v2 have different speeds and satisfy a relation: v1<v2.

Abstract: There is herein disclosed a manufacturing method of a spacer for an electron-beam apparatus which comprises an airtight container, and an electron source. The spacer is arranged in the airtight container. The method comprises the step of heating and drawing a base material of the spacer to form a desired rough state on the surface of the base material, the step of heating and drawing the base material of the spacer to form the desired rough state and an electroconductive film on the surface of the base material, or the step of heating and drawing the base material of the spacer having the rough state on its surface. According to the present invention, the spacer having a surface structure on which can suppress charging can be manufactured at a low cost, and an electron-beam apparatus such as an image-forming apparatus having a sufficient display luminance can also be manufactured.