Abstract: A substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.

Abstract: A method of forming an insulating film includes supplying a precursor gas to a substrate to generate a fluidic oligomer by plasma polymerization and deposit the fluidic oligomer on the substrate, performing a plasma process on the substrate after the depositing the fluidic oligomer, so that at least a part of the fluidic oligomer is hydrogen-terminated while maintaining fluidity of the fluidic oligomer, and subsequently performing an annealing process, which includes a plasma process, on the substrate to form the insulating film.

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Abstract: A substrate processing method is provided and includes forming a laminated structure film over a substrate, the laminated structure film including a metal-containing layer and a halogen-containing layer that are laminated; irradiating the laminated structure film with extreme ultraviolet light in a predetermined pattern to form, in the laminated structure film, an exposed portion irradiated with the extreme ultraviolet light and an unexposed portion not irradiated with the extreme ultraviolet light; and selectively removing the exposed portion of the laminated structure film.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

Abstract: A silicon carbonitride film-forming method includes (a) providing a substrate in a processing chamber; (b) supplying, into the processing chamber, a first gas containing a precursor gas having an Si—N bond and an Si—C bond, thereby forming an adsorption layer over the substrate; (c) first purging of purging an interior of the processing chamber after (b); and (d) supplying, into the processing chamber, a second gas containing a hydrogen gas and power of VHF waves or UHF waves, thereby generating a plasma; and (e) second purging of purging the interior of the processing chamber after (d). (b) to (e) are repeatedly performed.

Abstract: A method of removing an organometallic polymer film deposited inside a processing chamber is provided. The method includes: a) supplying a first etching gas to the processing chamber, and forming the first etching gas into a plasma; and b) allowing the organometallic polymer film to react with the plasma to vaporize and remove the organometallic polymer film. The first etching gas includes a hydrogen gas, a carbon-containing gas, and a nitrogen-containing gas.

Abstract: New gap fill materials and methods for filling gaps within patterned layers are provided herein. In various embodiments, a non-solid organometallic oxide polymer containing liquid-like oligomer units is deposited on a patterned layer via chemical vapor polymerization (CVP). The patterned layer comprises a plurality of structures, which are spaced apart and separated by gaps. During deposition, the liquid-like oligomer units flow into the gaps between the plurality of structures to completely fill the gaps with the non-solid organometallic oxide polymer. Heat-treating the semiconductor substrate further polymerizes the non-solid organometallic oxide polymer to form a photosensitive organometallic oxide polymer film on the patterned layer and within the gaps between the plurality of structures.

Abstract: A method of forming an insulating film includes supplying a precursor gas to a substrate to generate a fluidic oligomer by plasma polymerization and deposit the fluidic oligomer on the substrate, performing a plasma process on the substrate after the depositing the fluidic oligomer, so that at least a part of the fluidic oligomer is hydrogen-terminated while maintaining fluidity of the fluidic oligomer, and subsequently performing an annealing process, which includes a plasma process, on the substrate to form the insulating film.

Abstract: A substrate-processing method includes a) forming a flowable oligomer on a substrate, the flowable oligomer containing carbon; and b) exposing the substrate to a plasma of a modification gas containing carbon and hydrogen, thereby modifying the flowable oligomer and forming a carbon-containing film.

Abstract: A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. Si?O?(O—CmHn)?CxHy(where m, n, and ? are arbitrary integers of 1 or more, ?, ?, x, and y are arbitrary integers of 0 or more, and ? and ? are not 0 at a same time).

Abstract: A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. Si?O?(O—CmHn)?CxHy (where m, n, and a are arbitrary integers of 1 or more, ?, ?, x, and y are arbitrary integers of 0 or more, and ? and ? are not 0 at a same time).

Abstract: A method of forming an insulating film on a substrate having a recess, includes preparing the substrate inside a chamber of a processing apparatus, forming a flowable oligomer film on the substrate by supplying a processing gas containing a raw material gas and a diluent gas into the chamber and generating a flowable oligomer by plasma polymerization, controlling an interior of the chamber to have a pressure equal to or lower than a vapor pressure of the flowable oligomer to partially vaporize and remove the flowable oligomer film, and forming the insulating film in the recess by supplying energy to the substrate to cure the flowable oligomer.

Abstract: A method for forming a silicon-containing film in a recess formed on a surface of a substrate, the method includes: (a) forming a flowable film in the recess by exposing the substrate, which is adjusted to a first temperature, to plasma generated from a processing gas including a halogen-containing silane: and (b) curing the flowable film by thermally processing the substrate at a second temperature higher than the first temperature.

Abstract: Various embodiments of methods are provided for forming a moisture barrier layer on an EUV-active photoresist film before patterning the EUV-active photoresist film with EUV lithography. According to one embodiment, the methods disclosed herein may form an EUV-active photoresist film on a surface of a semiconductor substrate and a moisture barrier layer containing a hydrocarbon polymer on the EUV-active photoresist film before the EUV-active photoresist film is patterned with EUV lithography to form a patterned photoresist on the substrate surface. In some embodiments, a first hydrocarbon polymer layer may be formed on the substrate surface before an EUV-active photoresist film is formed on the first hydrocarbon polymer layer.

Abstract: Embodiments of methods are provided to form an EUV-active photoresist film for use in EUV photolithographic processes. The methods disclosed herein may generally include forming an extreme ultraviolet (EUV)-active photoresist film on a surface of the semiconductor substrate, where the EUV-active photoresist film is an organometallic oxide with polymerized carbon-carbon bonds, and patterning the EUV-active photoresist film with EUV lithography to form a patterned photoresist on the surface of the semiconductor substrate.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Abstract: The mixing system includes a first container filled with a polyol composition, a second container filled with an isocyanate composition, and a stationary mixer configured to mix the polyol composition discharged from the first container and the isocyanate composition discharged from the second container. The polyol composition includes a polyol, a catalyst, and a low boiling point compound having a boiling point of less than 0° C. The isocyanate composition includes an isocyanate compound and a low boiling point compound having a boiling point of less than 0° C. The first container and the second container each have an internal pressure in a range of 0.3 to 1.0 MPa at 35° C., and a mixer portion of the stationary mixer has a length of 30 to 230 mm. A mixing system can be provided that enhances the mixability of a polyol composition and a polyisocyanate composition in a stationary mixer and prevents curing in the stationary mixer.