Abstract: A method for forming a silicon-containing film in a recess formed on a surface of a substrate, the method includes: (a) forming a flowable film in the recess by exposing the substrate, which is adjusted to a first temperature, to plasma generated from a processing gas including a halogen-containing silane: and (b) curing the flowable film by thermally processing the substrate at a second temperature higher than the first temperature.

Abstract: Various embodiments of methods are provided for forming a moisture barrier layer on an EUV-active photoresist film before patterning the EUV-active photoresist film with EUV lithography. According to one embodiment, the methods disclosed herein may form an EUV-active photoresist film on a surface of a semiconductor substrate and a moisture barrier layer containing a hydrocarbon polymer on the EUV-active photoresist film before the EUV-active photoresist film is patterned with EUV lithography to form a patterned photoresist on the substrate surface. In some embodiments, a first hydrocarbon polymer layer may be formed on the substrate surface before an EUV-active photoresist film is formed on the first hydrocarbon polymer layer.

Abstract: Embodiments of methods are provided to form an EUV-active photoresist film for use in EUV photolithographic processes. The methods disclosed herein may generally include forming an extreme ultraviolet (EUV)-active photoresist film on a surface of the semiconductor substrate, where the EUV-active photoresist film is an organometallic oxide with polymerized carbon-carbon bonds, and patterning the EUV-active photoresist film with EUV lithography to form a patterned photoresist on the surface of the semiconductor substrate.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and forms an internal space communicating with an inside of the processing container, an internal electrode that passes through the partition wall, is detachably and airtightly inserted into the internal space, and is supplied with RF power, and an external electrode provided outside the partition wall.

Abstract: A plasma processing apparatus includes a processing container having an opening in a sidewall, a partition wall that covers the opening and defines an internal space communicating with an inside of the processing container, and an internal electrode that passes through the partition wall, is airtightly inserted into the internal space, and is supplied with RF power. A first gap is provided between the partition wall and the internal electrode.

Abstract: The mixing system includes a first container filled with a polyol composition, a second container filled with an isocyanate composition, and a stationary mixer configured to mix the polyol composition discharged from the first container and the isocyanate composition discharged from the second container. The polyol composition includes a polyol, a catalyst, and a low boiling point compound having a boiling point of less than 0° C. The isocyanate composition includes an isocyanate compound and a low boiling point compound having a boiling point of less than 0° C. The first container and the second container each have an internal pressure in a range of 0.3 to 1.0 MPa at 35° C., and a mixer portion of the stationary mixer has a length of 30 to 230 mm. A mixing system can be provided that enhances the mixability of a polyol composition and a polyisocyanate composition in a stationary mixer and prevents curing in the stationary mixer.

Abstract: An interlayer film for laminated glass of the present invention has an average storage modulus (G?) at 110 to 150° C. measured at a frequency of 1 Hz in a shear mode of 15000 Pa or less, and has an adhesive strength of 0.3 N/mm2 or more as measured in a cross peeling test performed under the following conditions on a cross peeling test sample produced by a predetermined method. Cross peeling test: A maximum load (N) when the polycarbonate plate glass is peeled from the clear float plate glass in a direction perpendicular to an adhesive surface at a rate of 10 mm/min at 23° C. is measured, and that measured maximum load (N) is taken as the adhesive strength.

Abstract: A film forming method forms a film on a substrate by plasma in a processing container including a stage configured to hold the substrate thereon, wherein the film forming method includes: (a) a step of supplying a raw material gas and a reaction gas as a processing gas to the processing container; and (b) a step of generating plasma of the processing gas using a radio-frequency power of 100 MHz or higher.

Abstract: A substrate processing apparatus includes: a vacuum transfer chamber including a substrate transfer mechanism provided in a vacuum transfer space thereof to collectively hold and transfer substrates with a substrate holder; and a processing chamber having processing spaces and connected to the vacuum transfer chamber. The processing chamber includes a loading/unloading port provided on a side of the vacuum transfer chamber to allow the vacuum transfer space and the processing spaces to communicate with each other. The processing spaces include a first processing space in which a first process is performed on the substrate and a second processing space in which a second process is performed on the substrate subjected to the first process. The first and second processing spaces are arranged in a direction in which the substrate is loaded and unloaded, and the substrate holder has a length that extends over the first and second processing spaces.

Abstract: Provided is an interlayer film for laminated glass capable of enhancing the sound insulating property over a wide range of temperature from 0° C. to 40° C. An interlayer film for laminated glass according to the present invention is an interlayer film for laminated glass having a one-layer structure or a two or more-layer structure, the interlayer film includes a resin layer, and a ratio of a first storage modulus G? at a peak temperature of a maximum peak of tan ? to a second storage modulus G? at a temperature 100° C. higher than the peak temperature of the maximum peak of tan ? is 50 or more and 500 or less in viscoelasticity measurement at a frequency of 1 Hz in a shearing mode.

Abstract: A method of forming an insulation film on a substrate, includes: reacting, as a film-forming gas, an oxygen-containing silicon compound gas represented by formula below with a non-oxidizing hydrogen-containing gas in a state in which at least the non-oxidizing hydrogen-containing gas is plasmarized, to form a film of a flowable silanol compound on the substrate; and subsequently, annealing the substrate to turn the flowable silanol compound into the insulation film. Si?O?(O—CmHn)?CxHy (where m, n, and a are arbitrary integers of 1 or more, ?, ?, x, and y are arbitrary integers of 0 or more, and ? and ? are not 0 at a same time).

Abstract: An interlayer film for laminated glass of the present invention has an average storage modulus (G?) at 110 to 150° C. measured at a frequency of 1 Hz in a shear mode of 15000 Pa or less, and has an adhesive strength of 0.3 N/mm2 or more as measured in a cross peeling test performed under the following conditions on a cross peeling test sample produced by a predetermined method. Cross peeling test: A maximum load (N) when the polycarbonate plate glass is peeled from the clear float plate glass in a direction perpendicular to an adhesive surface at a rate of 10 mm/min at 23° C. is measured, and that measured maximum load (N) is taken as the adhesive strength.

Abstract: The interlayer film for laminated glass of the present invention is an interlayer film for laminated glass that is disposed between an inorganic glass and an organic glass to bond the inorganic glass and the organic glass together, wherein the interlayer film for laminated glass comprises at least a first resin portion and a second resin portion, the interlayer film for laminated glass has a total thickness of 50 ?m or more and 2.0 mm or less, a product (kG1?) of a storage modulus (G1?) of the first resin portion measured at 80° C. at a frequency of 1 Hz in a shear mode and a coefficient (k) calculated by the following formula is less than 1.1×107 Pa, and a storage modulus (G2?) of the second resin portion measured at 80° C. at a frequency of 1 Hz in a shear mode is larger than 2.

Abstract: Provided is an interlayer film for laminated glass capable of enhancing the sound insulating property over a wide range of temperature from 0° C. to 40° C. An interlayer film for laminated glass according to the present invention is an interlayer film for laminated glass having a one-layer structure or a two or more-layer structure, the interlayer film includes a resin layer, and a ratio of a first storage modulus G? at a peak temperature of a maximum peak of tan ? to a second storage modulus G? at a temperature 100° C. higher than the peak temperature of the maximum peak of tan ? is 50 or more and 500 or less in viscoelasticity measurement at a frequency of 1 Hz in a shearing mode.

Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Abstract: A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.

Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Abstract: A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

Abstract: A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at ?50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of ?50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cm3 as a result of the heat treatment.