Abstract: Upon a deep-hole capacitor fabrication, a hole is formed in an insulator layer, and then a film of a conductive material is formed on the insulator layer and on the whole inner surface of the hole. The film and the insulator layer are exposed to a chemical-mechanical polishing process to form a lower electrodes of the conductive material. A capacitor dielectric on the lower electrode is formed, and then an upper electrode is formed on the capacitor dielectric.

Abstract: A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

Abstract: A method for manufacturing a capacitor includes depositing an interlayer insulating film on or above a plug connected to a switching element, forming a hole in the interlayer insulating film such that the opening portion of the hole is surrounded by an overhang structure and that the plug is exposed in the bottom of the hole, removing the overhang structure, forming a lower electrode on the inner surface of the deep hole, forming a dielectric on the lower electrode, and forming an upper electrode on the dielectric. The above steps prevent the formation of a gap in the capacitor, since the overhang structure as a cause of the gap is removed. The coverage by the dielectric is also prevented from being poor.

Abstract: According to one embodiment, a connection detection circuit detects a first state in which a first connector is connected to a motherboard. A reset-releasing circuit releases the reset state of a control unit upon detection of the first state by the connection detection circuit. The reset-releasing circuit receives a particular signal from an expansion unit via a particular signal pin. The particular signal pin assumes a particular logical state in a second state in which the expansion unit is connected to the motherboard. When the logical state of the particular signal pin differs from the particular logical state, the reset-releasing circuit does not release the reset state of the control unit, regardless of whether the connection detection circuit detects the first state.

Abstract: Upon a deep-hole capacitor fabrication, a hole is formed in an insulator layer, and then a film of a conductive material is formed on the insulator layer and on the whole inner surface of the hole. The film and the insulator layer are exposed to a chemical-mechanical polishing process to form a lower electrodes of the conductive material. A capacitor dielectric on the lower electrode is formed, and then an upper electrode is formed on the capacitor dielectric.

Abstract: The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0×1013/cm2 to 5.0×1014/cm2 to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.

Abstract: A semiconductor device includes cylindrical capacitors each including corresponding cylindrical electrodes. Each cylindrical electrode includes hemispherical silicon grains. The hemispherical silicon grains protruding from an upper region of the cylindrical electrode have a large size, and the hemispherical silicon grains protruding from a lower region of the cylindrical electrode have a small size or the lower region of the cylindrical electrode has no hemispherical silicon grains.

Abstract: In processes for preparing a ceric ion-containing aqueous acid solution by electrolytically oxidizing cerous ions in a cerous ion-containing aqueous acid solution using a diaphragm-free electrolytic bath having no diaphragm between the anode and the cathode, a process for preparing a ceric ion-containing aqueous acid solution which comprises making at least one heterocyclic compound selected from the group consisting of five-membered heteromonocyclic compounds having substituent(s), six-membered heteromonocyclic compounds having substituent(s) and condensed heteropolycyclic compounds exist in the cerous ion-containing aqueous acid solution.

Abstract: A process for preparation of a 2-substituted-1,4-naphthoquinone which comprises oxidizing a 2-substituted naphthalene to obtain reaction products comprising a 2-substituted-1,4-naphthoquinone and a 6-substituted-1,4-naphthoquinone; adding a diene compound to the reaction products and heating the mixture to form a Diels-Alder reaction adduct between the diene compound and the 6-substituted-1,4-naphthoquinone in the reaction products; and separating the 2-substituted-1,4-naphthoquinone from the adduct.

Abstract: A process for producing 1-aminoanthraquinones represented by formula (C) ##STR1## wherein R.sup.1 and R.sup.2, independently from each other, denote one type selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms and a halogen atom,which comprises converting 5-nitro-1,4,4a,9a-tetrahydroanthraquinones represented by formula (A) ##STR2## wherein R.sup.1 and R.sup.2 are as defined above, into 1-hydroxylaminoanthraquinones represented by formula (B) ##STR3## wherein R.sup.1 and R.sup.2 are as defined above, in the presence of a basic compound, and electrolytically reducing the resulting 1-hydroxylaminoanthraquinones in the presence of a basic compound.

Abstract: A process for producing 1-aminoanthraquinones represented by the formula (C) ##STR1## wherein R.sup.1 and R.sup.2, independently from each other, denote one type selected from a hydrogen atom, an alkyl group having 1 to 4 carbon atoms and a halogen atom,which comprises converting 5-nitro-1,4,4a,9a-tetrahydroanthraquinones respresented by formula (A) ##STR2## wherein R.sup.1 and R.sup.2 are as defined above, into 1-hydroxylaminoanthraquinones represented by formula (B) ##STR3## wherein R.sup.1 and R.sup.2 are as defined above, in the presence of a basic compound, and electrolytically reducing the resulting 1-hydroxylaminoanthraquinones in the presence of a basic compound.

Abstract: A process for producing 1-aminoanthraquinone, which comprises(a) a step of oxidizing 1-nitronaphthalene in the liquid phase with an acidic aqueous solution containing a ceric ion as an oxidizing agent and separating crystals containing 5-nitro-1,4-naphthoquinone and the acidic aqueous solution containing a cerium ion from the resulting reaction mixture,(b) a step of subjecting the 5-nitro-1,4-naphthoquinone obtained in step (a) to Diels-Alder reaction with 1,3-butadiene in a solvent, precipitating crystals containing the resulting 5-nitro-1,4,4a,9a-tetrahydroanthraquinone, separating them by filtration, separating and recovering the unreacted 1-nitronaphthalene and the solvent in the filtrate in a separation tower, and recycling 1-nitronaphthalene to step (a) for use as the starting material and re-using the recovered solvent for the Diels-Alder reaction,(c) a step of reducing 5-nitro-1,4,4a,9a-tetrahydroanthraquinone obtained in step (b), separating crystals containing 1-aminoanthraquinone and purifying them

Abstract: When the winding operation is started, the leading edge portion of the sheet is sucked and held by one of a pair of horizontally disposed rollers and the extension of the leading edge portion of the sheet beyond the one roller is controlled by rotation of said one roller. An adhesive with a suitable viscosity is sprayed against a core from the position below the core. The core and said one roller are rotated so that the sheet is clamped between the one roller and the portion of the core which is applied with the adhesive and consequently is bonded to the core. Thereafter the pair of rollers are rotated at a low speed so that the slack of the sheet is eliminated. Next the sheet is wound around the core at a high speed. After the winding operation, an adhesive with a suitable viscosity is sprayed against a roll of paper from below so that the sheet is bonded by the weight of the roll of paper itself. Thereafter the sheet is cut off and the roll of paper is pushed out.

Abstract: A catalyst for the production of phthalic anhydride by the catalytic vapor-phase oxidation of o-xylene or naphthalene with molecular oxygen, said catalyst comprising a catalytically active material composed of 1 to 20 parts by weight of V.sub.2 O.sub.5 of vanadium oxide and 99 to 80 parts by weight as TiO.sub.2 of anatase-type titanium oxide being porous and having a particle diameter substantially of 0.4 to 0.7 micron and a specific surface area of 10 to 60 m.sup.2 /g, and per 100 parts by weight of the sum of these two components, 0.01 to 1 part by weight as Nb.sub.2 O.sub.5 of niobium, 0.05 to 1.2 parts by weight as oxide of potassium, cesium, rubidium or thallium, 0.2 to 1.2 parts by weight as P.sub.2 O.sub.5 of phosphorus and 0.5 to 10 parts by weight as Sb.sub.2 O.sub.3 of antimony, said catalytically active material being supported on a porous carrier in an amount of 3 to 200 g/100 cc of carrier.