Patents by Inventor Norifumi Kimura
Norifumi Kimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105685Abstract: The present technology relates to a display module and a manufacturing method, and a display apparatus that enable visual quality to be improved. A display module includes a display section and a film disposed on the display section to reduce light incident from outside and that is reflected from the display section. The display section includes an electronic board and a plurality of LED elements juxtaposed at predetermined intervals on a surface of the electronic board, the surface being on the film side. A distance from the LED element positioned closest to an end of the display section to the end of the display section is equal to or shorter than half the predetermined interval. The present technology is applicable to a LED tiling display.Type: ApplicationFiled: November 26, 2021Publication date: March 28, 2024Inventors: HISANORI TSUBOI, MASANOBU KIMURA, NORIFUMI KIKUCHI
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Publication number: 20140295675Abstract: A silicon oxide film forming method includes performing a set one or more times, the set including: a standby process in which a workpiece is accommodated into and recovered from a boat; a load process in which the workpiece accommodated in the boat is loaded into a reaction chamber; a silicon oxide film formation process in which a silicon oxide film is formed on the workpiece accommodated within the reaction chamber; and an unload process in which the workpiece having the silicon oxide film is unloaded from the reaction chamber. In at least one of the unload process, the standby process and the load process, a gas containing water vapor is supplied into the reaction chamber while an interior of the reaction chamber is heated.Type: ApplicationFiled: March 26, 2014Publication date: October 2, 2014Applicant: Tokyo Electronic LimitedInventors: Toshiyuki IKEUCHI, Norifumi KIMURA, Tomoyuki OBU
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Publication number: 20110287629Abstract: A silicon film formation method includes a first film formation operation, an etching operation, and a second film formation operation. In the first film formation operation, a first silicon film is formed to fill the groove of the object to be processed. In the etching operation, an opening of the groove is widened by etching the first silicon film formed in the first film formation operation. In the second film formation operation, a second silicon film is formed on the groove having the opening widened in the etching operation to fill the groove. Accordingly, a silicon film is formed on a groove of an object to be processed having the groove provided thereon.Type: ApplicationFiled: May 18, 2011Publication date: November 24, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Akinobu KAKIMOTO, Satoshi TAKAGI, Jyunji ARIGA, Norifumi KIMURA, Kazuhide HASEBE
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Patent number: 7938080Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: GrantFiled: December 9, 2008Date of Patent: May 10, 2011Assignee: Tokyo Electron LimitedInventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7648895Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.Type: GrantFiled: December 22, 2008Date of Patent: January 19, 2010Assignee: Tokyo Electron LimitedInventors: Masaki Kurokawa, Katsuhiko Komori, Norifumi Kimura, Kazuhide Hasebe, Takehiko Fujita, Akitake Tamura, Yoshikazu Furusawa
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Patent number: 7597553Abstract: An orthodontic bracket enables orthodontic treatment to be performed without resetting of a bracket body and an arch wire relative to the tooth, even in an advanced stage of the treatment. The orthodontic bracket comprises a bonding plate having a bonding surface matching the curvature of the tooth, a base having a bottom surface united with the bonding plate and an upper surface serving as a sliding surface parallel to the longitudinal axis of the tooth and taking an approximately rectangular shape in plan with a convex curve formed in accordance with the long axis of the tooth. A bracket body is mounted on the sliding surface of the base so as to be slidable along the tooth axis. The base has, at opposing sides of the sliding surface, grooved parallel rails for slidably holding the bracket body therebetween. Each rail has, at its opposite ends, stoppers to prevent detachment of the bracket body. The sliding surface has a central longitudinally-extending visible median line.Type: GrantFiled: November 28, 2006Date of Patent: October 6, 2009Inventor: Norifumi Kimura
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Publication number: 20090104760Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.Type: ApplicationFiled: December 22, 2008Publication date: April 23, 2009Applicant: TOKYO ELECTON LIMITEDInventors: Masaki KUROKAWA, Katsuhiko Komori, Norifumi Kimura, Kazuhide Hasebe, Takehiko Fujita, Akitake Tamura, Yoshikazu Furusawa
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Publication number: 20090090300Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: ApplicationFiled: December 9, 2008Publication date: April 9, 2009Inventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7494943Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: GrantFiled: October 6, 2006Date of Patent: February 24, 2009Assignee: Tokyo Electron LimitedInventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Patent number: 7273818Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.Type: GrantFiled: October 18, 2004Date of Patent: September 25, 2007Assignee: Tokyo Electron LimitedInventors: Masaki Kurokawa, Norifumi Kimura, Takehiko Fujita, Yoshikazu Furusawa, Katsuhiko Komori, Kazuhide Hasebe
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Publication number: 20070128571Abstract: An orthodontic bracket placed on a side surface of a tooth for correcting irregularities of teeth is disclosed, which enables orthodontic treatments to be performed without reset of a bracket body and an arch wire with respect to the tooth even in an advanced stage of the treatments. The orthodontic bracket comprises a bonding plate having a bonding surface matching a curve of the tooth, a base having a bottom surface united with the bonding plate and an upper surface as a sliding surface parallel to a long axis of the tooth and taking an approximately rectangular shape in plan with a convex curve formed in accordance with the long axis of the tooth, and a bracket body set on the sliding surface of the base so as to be slidable along the tooth axis. The base has, at the opposite upper sections of the sliding surface, confronting groove-like parallel rails adapted to let slidably the opposite portions of the bracket body therein.Type: ApplicationFiled: November 28, 2006Publication date: June 7, 2007Inventor: Norifumi Kimura
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Publication number: 20070093075Abstract: In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness of a thin film to be formed on a target substrate. Further, a timing of performing a cleaning process is determined in accordance with the process conditions. The timing is defined by a threshold concerning a cumulative film thickness of the thin film. The cumulative film thickness does not exceed the threshold where the film formation process is repeated N times (N is a positive integer), but exceeds the threshold where the film formation process is repeated N+1 times. The method includes continuously performing first to Nth processes, each consisting of the film formation process, and performing the cleaning process after the Nth process and before an (N+1)th process consisting of the film formation process.Type: ApplicationFiled: October 6, 2006Publication date: April 26, 2007Inventors: Naotaka Noro, Yamato Tonegawa, Takehiko Fujita, Norifumi Kimura
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Publication number: 20060021570Abstract: A hemispherical grained (HSG) film is oxidized to form an oxidized layer at the surface part of the HSG film, and then the oxidized layer is etched to be removed. The size of the hemispherical grains after etching is smaller than that as formed.Type: ApplicationFiled: July 29, 2005Publication date: February 2, 2006Inventors: Kazuhide Hasebe, Norifumi Kimura, Takehiko Fujita, Yoshikazu Furusawa
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Publication number: 20050181586Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.Type: ApplicationFiled: October 18, 2004Publication date: August 18, 2005Inventors: Masaki Kurokawa, Katsuhiko Komori, Norifumi Kimura, Kazuhide Hasebe, Takehiko Fujita, Akitake Tamura, Yoshikazu Furusawa
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Publication number: 20050170617Abstract: In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.Type: ApplicationFiled: October 18, 2004Publication date: August 4, 2005Inventors: Masaki Kurokawa, Norifumi Kimura, Takehiko Fujita, Yoshikazu Furusawa, Katsuhiko Komori, Kazuhide Hasebe
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Patent number: D404370Type: GrantFiled: February 5, 1998Date of Patent: January 19, 1999Assignee: Tokyo Electron LimitedInventor: Norifumi Kimura
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Patent number: D404373Type: GrantFiled: February 12, 1998Date of Patent: January 19, 1999Assignee: Tokyo Electron LimitedInventor: Norifumi Kimura
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Patent number: D404374Type: GrantFiled: February 12, 1998Date of Patent: January 19, 1999Assignee: Tokyo Electron LimitedInventor: Norifumi Kimura