Abstract: A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor.

Abstract: A semiconductor device and process of forming the device are described. The process includes forming a pad oxide film on the circuit-forming side of a semiconductor substrate; forming an oxidation prevention film on the pad oxide film; removing the oxidation prevention film and the pad oxide film at a desired position, thereby exposing the surface of the semiconductor substrate; horizontally recessing the pad oxide film; etching the exposed surface of the semiconductor substrate by isotropic etching; forming a trench to a desired depth, using the oxidation prevention film as a mask; horizontally recessing the pad oxide film; and oxidizing the trench formed in the semiconductor substrate. The produced device has round upper trench edges obtained by conducting isotropic etching of the exposed surface of the semiconductor substrate and horizontally recessing of the pad oxide film before the oxidation of the trench, whereby only one oxidation step is required.

Abstract: Over the principal surface of a semiconductor substrate body containing an impurity of a predetermined conduction type, there is formed an epitaxial layer which contains an impurity of the same conduction type as that of the former impurity and the same concentration as the designed one of the former impurity. After this, there are formed a well region which has the same conduction type as that of said impurity and its impurity concentration gradually lowered depthwise of said epitaxial layer. The well region is formed with the gate insulating films of MIS·FETs.

Abstract: A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: The present invention is directed to a composition for gene transfer which composition contains a quaternary ammonium salt represented by formula (1): (wherein each of R1, R2, R3, R4, and R5, which are identical to or different from one another, represents a C9-C17 aliphatic group); X1 represents a halogen atom; and n is an integer from 1 to 10 inclusive; and a method for introducing a gene into a cell by use of the composition. The composition enables effective delivery and expression of a gene which previously could not be effectively expressed in cells due to the low ratio at which the gene is delivered into cells. Therefore, the composition is advantageously used as a gene transfer reagent or a pharmaceutical.

Abstract: Grooves are defined in a substrate having device isolation regions by dry etching using silicon nitride films and side wall spacers as masks. Thereafter, the side wall spacers lying on side walls of the silicon nitride films are removed and the substrate is subjected to thermal oxidation, whereby the surface of the substrate at a peripheral portion of each active region is subjected to so-called round processing so as to have a sectional shape having a convex rounded shape.

Abstract: A cylindrical type alkaline storage battery includes a metallic case, a sealing plate for the metallic case, and a spiral-shaped group of electrodes. The group of electrodes includes a positive electrode plate, a negative electrode plate and a separator. The sealing plate includes a cap-shaped terminal plate, which includes a cap part and a flange, and a disc-shaped filter on the underside of the flange. The disc shaped filter has a gas venting hole in its center. A safety valve is included between the flange and the filter. A space between the metallic case and the rims of the flange and of the filter is sealed with a gasket.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A structure for highly precisely and easily mounting an electronic circuit unit on a mother board without defective soldering, comprising a circuit board 3 provided with extending portions 3d having terminal patterns 8 formed thereon, a housing 2 for containing the circuit board 3 while permitting the extending portions 3d to protrude, and a mother board 5 having, formed therein, through holes 5a in which the extending portions 3d are to be inserted, having, formed thereon, wiring pattern (not shown) that is to be electrically connected to the terminal patterns 8, and permitting the extending portions 3d to be inserted in the through holes 5a so that the housing 2 is placed thereon. The circuit board 3 is provided with a protruded portion 3e which extends separately from the extending portions 3d and pushes the terminal patterns 8 onto the wiring pattern of the mother board 5.

Abstract: In a tuner unit, a metal shielding plate standing upright on a circuit board is provided between circuit blocks formed on the circuit board so as to electrically shield the circuit blocks from each other. A metal bridge that connects the shielding plate and a frame is provided between some circuit blocks and at a distance from the circuit board so that an electrical component can be mounted on a portion of the circuit board opposing the bridge. This makes it possible to reduce the mounting space for the electrical component and to achieve a small tuner unit.

Abstract: There is provided a power output control system for an internal combustion engine, which enables the vehicle to smoothly perform refuge travel to find a place to park when an electric throttle control device becomes incapable of controlling a throttle valve, while ensuring adequate traveling performance. An ECU determines whether or not the electric throttle control device is incapable of controlling the throttle valve, and interrupts energization of the electric throttle control device when it is determined that the electric throttle control device is incapable of controlling the throttle valve. At this time, the opening of the throttle valve is held at the default opening degree by a spring. Further, basic ignition timing is calculated according to the engine rotational speed and load on the engine, and ignition timing of the engine is determined by correcting the calculated basic ignition timing according to the amount of operation of the accelerator pedal.

Abstract: There is provided a control system for a vehicle, which enables the vehicle to smoothly travel only to find a place to park when an electric throttle control device is in a condition incapable of controlling a throttle valve, thereby improving drivability. An ECU determines whether or not the electric throttle control device is in the condition incapable of controlling the throttle valve, and interrupts energization of the electric throttle control device when it is determined that the electric throttle control device is in the condition incapable of controlling the throttle valve. The throttle valve is held at a default opening position by a spring when the electric throttle control device is determined to be in the condition incapable of controlling the throttle valve. A throttle valve opening sensor detects a degree of opening of the throttle valve.

Abstract: Grooves are defined in a substrate having device isolation regions by dry etching using silicon nitride films and side wall spacers as masks. Thereafter, the side wall spacers lying on side walls of the silicon nitride films are removed and the substrate is subjected to thermal oxidation, whereby the surface of the substrate at a peripheral portion of each active region is subjected to so-called round processing so as to have a sectional shape having a convex rounded shape.

Abstract: A semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step, there is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

Abstract: A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.

Abstract: A semiconductor integrated circuit device and a method of manufacturing the same. The surface of a substrate of an active region surrounded by an element isolation trench is horizontally flat in the center portion of the active region but falls toward the side wall of the element isolation trench in the shoulder portion of the active region. This inclined surface contains two inclined surfaces having different inclination angles. The first inclined surface near the center portion of the active region is relatively steep and the second inclined surface near the side wall of the element isolation trench is gentler than the first inclined surface. The surface of the substrate in the shoulder portion of the active region is wholly rounded and has no angular portion.

Abstract: In an exhaust gas purifying apparatus of the present invention, oxygen sensors 18 and 20 are respectively located upstream, a close coupled three-way catalyst 14 positioned at the upstream end of an exhaust system, and downstream, in a under floor three-way catalyst 17 positioned at the downstream end. When an output VO2 of the oxygen sensor 20 exceeds a predetermined voltage VO2H2, the first correction coefficient KCMDLS is calculated in accordance with the output VO2 (S12 and S13). And when VO2≦VO2H2 is established, in accordance with the engine operating state the second correction coefficient KVMDR is set to a predetermined value KVMDR0 that is slightly greater than 1.0 (S16 to S18), and the target air-fuel ratio coefficient KCMD is corrected by using the correction coefficients KCMDLS and KCMDR (S21).

Abstract: The present invention provides a heat-insurating structure using a fluff-like heat-insulating material such as cellulose insulation fibers, capable of allowing convenient handling and preventing a so-called settling-down phenomenon in which the top of the heat-insulating material will settle down with time. The heat-insulating structure comprises a plurality of strap-shaped partition members 2 arranged to define an array of heat-insulating segments therebetween, and cellulose insulation fibers filled in each of the heat-insulating segments. A surface member 3 such as an underlying member or a facing member may be adhesively attached to the exposed surface of the interleaved structure of the partition members and the heat-insulating segments filled with the cellulose insulation fibers to provide a discrete heat-insulating panel.

Abstract: A service identification adding portion adds service identification information to a cell corresponding to each connection that uses a predetermined communication service (ABR service) and that is input to a switch system. A connection number counting portion counts the number of connections that use the communication service on each output line at predetermined intervals. A band control information generating portion generates band control information corresponding to each output line at predetermined intervals based on the number of connections counted at predetermined intervals. A band control information indicating portion sends band control information at predetermined intervals corresponding to each output line to a transmission side terminal corresponding to a connection that uses the communication service on each output line.