Abstract: A multi-level integrated circuit, having a superposition of a first stack and a second stack of layers, and including a first row of electronic devices produced in the first stack, extending parallel to a first direction and fitting into a first volume with a substantially parallelepiped rectangle shape and having edges perpendicular to the first direction and with dimension H1; a second row of electronic devices produced in the second stack, extending parallel to the first direction and fitting into a second volume with a substantially parallelepiped rectangle shape and having edges perpendicular to the first direction and with dimension H2<H1; and a plurality of electrical connection elements passing through the second stack of layers, each connection element fitting into a third volume arranged on the first volume and next to the second volume.

Abstract: An integrated circuit includes a stack having a semiconductor substrate with a first type of dopant, an UTBOX type buried insulating layer, electronic components, formed in the substrate, ground planes disposed beneath the buried insulating layer so as to be respectively plumb with corresponding components, wells with the first type of dopant, the wells being respectively beneath corresponding ground planes, and a bias circuit enabling distinct voltages to be applied to the ground planes by the wells. The wells are separated from the substrate by a deep well with a second type of dopant. The wells are separated from each other by a separating structure, which is either a lateral well having a second type of dopant or a block of insulating material.

Abstract: A support substrate comprises first and second counter-electrodes arranged in the same plane at the level of a surface of the support substrate. An electrically insulating area separates the first and second counter-electrodes. A semi-conducting area with first and second portions is separated from the support substrate by an electrically insulating material. The electrically insulating material is different from the material forming the support substrate. The first portion of the semi-conducting area is facing the first counter-electrode. The second portion of the semi-conducting area is facing the second counter-electrode.

Abstract: A microelectronic device including, on a substrate, at least one element such as a SRAM memory cell; one or more first transistor(s), respectively including a number k of channels (k?1) parallel in a direction forming a non-zero angle with the main plane of the substrate, and one or more second transistor(s), respectively including a number m of channels, such that m>k, parallel in a direction forming a non-zero angle, or an orthogonal direction, with the main plane of the substrate.

Abstract: A manufacture includes an IC comprising a stacking of a semiconducting substrate, a buried insulating layer, and a semiconducting layer, a first electronic component formed in and/or on the semiconductor layer, a bias circuit to generate a first bias voltage, first and second via-type interconnections, to which the bias circuit applies a same bias voltage equal to the first bias voltage, a first insulation trench separating the first electronic component from the first and second interconnections, a first ground plane having a first type of doping, placed beneath the buried insulating layer plumb with the first electronic component, and extending beneath the first insulation trench and up into contact the first interconnection, and a first well having a second type of doping opposite that of the first type, plumb with the first ground plane, and extending beneath the first insulation trench and up into contact with the second interconnection.

Abstract: A method for making a microelectronic device with one or plural double-gate transistors, including: a) forming one or plural structures on a substrate including at least one first block configured to form a first gate of a double-gate transistor, and at least a second block configured to form the second gate of the double-gate, the first block and the second block being located on opposite sides of at least one semiconducting zone and separated from the semiconducting zone by a first gate dielectric zone and a second gate dielectric zone respectively; and b) doping at least one or plural semiconducting zones in the second block of at least one given structure among the structures, using at least a first implantation selective relative to the first block, the implantation being done on a first side of the given structure, the part of the structure on the other side of the normal to the principal plane of the substrate passing through the semiconducting zone not being implanted.

Abstract: An integrated circuit on a semiconductor substrate has logic gates comprising FDSOI-type transistors made on said substrate, including at least one first transistor comprising a gate with a first work function, and including a transistor comprising a second work function, a memory including memory cells, each memory cell comprising FDSOI type transistors, including at least one third nMOS transistor with a gate presenting a third work function, the third transistor comprising a buried insulating layer and a ground plane at least one fourth pMOS transistor with a gate presenting said third work function, the fourth transistor comprising a buried insulating layer and a ground plane, the ground planes of the third and fourth transistors being made in a same well separating these ground planes from said substrate.

Abstract: An etching mask, comprising the delineation pattern of the gate electrode, of a source contact, a drain contact and a counter-electrode contact, is formed on a substrate of semi-conductor on insulator type. The substrate is covered by a layer of dielectric material and a gate material. The counter-electrode contact is located in the pattern of the gate electrode. The gate material is etched to define the gate electrode, the source contact and drain contacts and the counter-electrode contact. A part of the support substrate is released through the pattern of the counter-electrode contact area. An electrically conductive material is deposited on the free part of the support substrate to form the counter-electrode contact.

Abstract: The present invention relates to a method for preparing particles, notably particles encapsulating an active substance. It also relates to particles obtainable by this process, dispersion thereof, and their use as a vehicle for pharmaceutical, cosmetic, diagnostic, veterinary, phytosanitary active substances or processed foodstuff.

Abstract: A method for fabricating a microelectronic device with one or several asymmetric and symmetric double-gate transistors on the same substrate.

Abstract: A random access memory cell including: two double-gate access transistors respectively arranged between a first bit line and a first storage node and between a second bit line and a second storage node, a word line, a first double-gate load transistor and a second double-gate load transistor, a first double-gate driver transistor and a second double-gate driver transistor, a mechanism to apply a given potential to at least one electrode of each of the load or driver transistors, and a mechanism to cause the given potential to vary.

Abstract: The memory cell is of SRAM type with four transistors provided with a counter-electrode. It comprises a first area made from semiconductor material with a first transfer transistor and a first driver transistor connected in series, their common terminal defining a first electric node. A second transfer transistor and a second driver transistor are connected in series on a second area made from semiconductor material and their common terminal defines a second electric node. The support substrate comprises first and second counter-electrodes. The first and second counter-electrodes are located respectively facing the first and second semiconductor material areas. The first transfer transistor and second driver transistor are on a first side of a plane passing through the first and second electric nodes whereas the first driver transistor and second transfer transistor are on the other side of the plane.

Abstract: A method for fabricating a microelectronic device with one or plural double-gate transistors, including: a) forming one or plural structures on a substrate including at least a first block configured to form a first gate of a double-gate transistor, and at least a second block configured to form the second gate of said double-gate, the first block and the second block being located on opposite sides of at least one semiconducting zone and separated from the semiconducting zone by a first gate dielectric zone and a second gate dielectric zone respectively, and b) doping at least one or plural semiconducting zones in the second block of at least one given structure among the structures, using at least one implantation selective relative to the first block, the second block being covered by a hard mask, a critical dimension of the hard mask being larger than the critical dimension of the second block.

Abstract: The invention relates to an integrated circuit including an active semiconducting layer separated from a semiconducting substrate layer by an embedded insulating material surface, including: first and second transistors (205, 213) of a single type; first and second floorplans arranged vertically perpendicular to the first and second transistors; wherein the first transistor has a doping of the floorplan thereof, opposite that of the source thereof, and a first threshold voltage; the second transistor has a doping of the floorplan thereof, identical to that of the source thereof, and a second threshold voltage; the first threshold voltage is dependent on the potential difference applied between the source and the floorplan of the first transistor; and the second threshold voltage is dependent on the potential difference applied between the source and the floorplan of the second transistor.

Abstract: A microelectronic device including: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor including a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by an insulating zone, and said insulating zone being constituted of several different dielectric materials include a first dielectric material and a second dielectric material.

Abstract: The invention concerns a random access memory cell comprising: at least one first plurality of symmetrical dual-gate transistors (TL1T, TL1F, TD1T, TD1F, TL2T, TL2F) forming a flip-flop, at least a first asymmetric dual-gate access transistor (TA1T, TAW1T) and at least a second asymmetric dual-gate access transistor (TA1F, TAW1F) disposed respectively between a first bit line (BLT, WBLT) and a first storage node (T), and between a second bit line (BLF, WBLF) and a second storage node (F), a first gate of the first access transistor (TA1T, TAW1T) and a first gate of the second access transistor (TA1F, TAW1F) being connected to a first word line (WL, WWL) able to route a biasing signal, a second gate (TA1F, TAW1F) of the first access transistor connected to the second storage node (F) and a second gate of the second access transistor connected to the first storage node (T).

Abstract: The present invention relates to a useful method for preparing nanocapsules having a liquid lipid core and a solid shell and charged with at least one active agent having a hydrophilic character, said method comprising at least the steps consisting in: i) providing at least a first microemulsion having a water-in-oil character, stabilized by at least one lipophilic surfactant and containing in its hydrophilic phase at least one active agent having a hydrophilic character, providing at least a second microemulsion, separate from the first microemulsion, formulated by phase inversion of an emulsion and stabilized by at least one heat-sensitive, nonionic hydrophilic surfactant; iii) adding said first microemulsion to said second microemulsion under conditions propitious for the formation of a novel microemulsion architecture in which said hydrophilic active agent remains present in the hydrophilic phase of the first microemulsion; and iv) chill-hardening the mixture formed in the previous step, so as to obtain n

Abstract: A method for fabricating a microelectronic device with one or plural asymmetric double-gate transistors, including: a) forming one or plural structures on a substrate including at least a first semiconducting block configured to form a first gate of a double-gate transistor, and at least a second semiconducting block configured to form a second gate of the double-gate transistor, the first block and the second block being located on opposite sides of at least one semiconducting zone and separated from the semiconducting zone by a first gate dielectric zone and a second gate dielectric zone respectively, and b) doping at least one or plural semiconducting zones in the second block of at least one given structure among the structures, using at least one implantation selective relative to the first block.

Abstract: A static random access memory cell which, on a substrate surmounted by a stack of layers, including: a first plurality of transistors situated at a given level of the stack of which at least one first access transistor and at least one second access transistor are connected to a word line and are arranged between a first bit line and a first storage node and a second bit line and a second storage node, respectively; and a second plurality of transistors forming a flip-flop and situated at least one other level of the stack, beneath said given level, wherein the transistors of the second plurality of transistors each comprising a gate electrode situated opposite a channel region of a transistor of the first plurality of transistors and separated from this channel region by an insulating region provided to enable coupling of said gate electrode and said channel region.

Abstract: The invention relates to electronic integrated circuits capable of operating either in active mode or in standby mode and of having, in standby mode, a very low current consumption. According to the invention, the leakage current of a power transistor inserted in series between a supply terminal and an active circuit is controlled by a gate reverse overbias in the following manner: a voltage step-up charge pump generates a gate bias voltage from pulses delivered by an oscillator having its frequency controlled by a current. The control current Ic is the leakage current of a transistor having technological characteristics similar to those of the power transistor. The system optimizes the current consumption in standby mode, the frequency of the oscillator being reduced when the gate is biased so as to minimize the leakage current. The invention is applicable to circuits powered by a battery or a cell (mobile telephones, cameras, portable computers, etc.).