Abstract: A microelectronic device comprising: a substrate surmounted by a stack of layers, at least one first transistor situated at a given level of said stack, at least one second transistor situated at a second level of said stack, above said given level, the first transistor comprising a gate electrode situated opposite a channel zone of the second transistor, the first transistor and the second transistor being separated by means of an insulating zone, said insulating zone having, in a first region between said gate of said first transistor and said channel of said second transistor, a composition and thickness provided so as to enable a coupling between the gate electrode of the first transistor and the channel of the second transistor, said insulating zone comprising a second region around the first region, between the access zones of the first and the second transistor of thickness and composition different to those of said first region.

Abstract: A non-volatile random access memory cell which, on a substrate surmounted by a stack of layers, comprises: a first plurality of transistors situated at a given level of the stack of which at least one first access transistor and at least one second access transistor, which are arranged between a first bit line and a first storage node, and between a second bit line and a second storage node, respectively, the first access transistor and the second access transistor having a gate connected to a word line, a second plurality of transistors forming a flip-flop and situated at, at least one other level of the stack, beneath said given level, the transistors of the second plurality of transistors each comprising a gate electrode situated opposite a channel region of a transistor of the first plurality of transistors and separated from this channel region by means of an insulating region provided to enable coupling of said gate electrode and said channel region.

Abstract: A circuit for biasing the bulk of a MOS transistor, including a capacitive element connecting the bulk of the MOS transistor to a source of an voltage.

Abstract: The present invention relates to a method for preparing particles, notably particles encapsulating an active substance. It also relates to particles obtainable by this process, dispersion thereof, and their use as a vehicle for pharmaceutical, cosmetic, diagnostic, veterinary, phytosanitary active substances or processed foodstuff.

Abstract: This invention relates to an improved microelectronic RAM memory device, provided with 4T or 6T cells made using the double gate technology and each associated with two word lines.

Abstract: A random access memory microelectronic device, comprising a plurality of cells comprising respectively: a plurality of transistors forming a bistable, a first storage node and a second storage node, a first double gate access transistor to the first storage node and a second double gate access transistor to the second storage node, a first gate of the first access transistor and a first gate of the second access transistor being linked to a first word line, a second gate of the first access transistor and a second gate of the second access transistor being linked to a second word line, the device being moreover equipped: with a reference memory cell provided to deliver a bias potential intended to be applied to one of the respective word lines of one or several given cells of said plurality of cells during reading access of said given cells.

Abstract: A transistor device with a mobile suspended gate, the device comprising means for piezoelectric actuation of the gate, and a method for producing such a device.

Abstract: The present application relates to a non-volatile random-access memory cell equipped with a suspended mobile gate and with piezoelectric means for operating the gate.

Abstract: The invention relates to the use of lipids as formulation agents for increasing the bioavailability of protein active ingredients in subcutaneous or intramuscular injectable formulations.

Abstract: The invention concerns a random access memory cell comprising: at least one first plurality of symmetrical dual-gate transistors (TL1T, TL1F, TD1T, TD1F, TL2T, TL2F) forming a flip-flop, at least a first asymmetric dual-gate access transistor (TA1T, TAW1T) and at least a second asymmetric dual-gate access transistor (TA1F, TAW1F) disposed respectively between a first bit line (BLT, WBLT) and a first storage node (T), and between a second bit line (BLF, WBLF) and a second storage node (F), a first gate of the first access transistor (TA1T, TAW1T) and a first gate of the second access transistor (TA1F, TAW1F) being connected to a first word line (WL, WWL) able to route a biasing signal, a second gate (TA1F, TAW1F) of the first access transistor connected to the second storage node (F) and a second gate of the second access transistor connected to the first storage node (T).

Abstract: A circuit for biasing the bulk of a MOS transistor, including a capacitive element connecting the bulk of the MOS transistor to a source of an A.C. voltage.

Abstract: This invention relates to an improved microelectronic RAM memory device, provided with 4T or 6T cells made using the double gate technology and each associated with two word lines.

Abstract: A method is disclosed for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate. The method comprises the steps of maintaining one or more precursors in liquid form or in solution at a pressure higher than the pressure of the chamber; injecting periodically and under control in the deposition chamber precursor droplets each of the droplets having a controllable volume; volatizing the injected precursor droplets to produce evaporated precursors, and conveying toward the substrate the evaporated precursors at a temperature and pressure of the chamber, whereby the evaporated precursors react to produce the elements deposited onto the substrate.

Abstract: Device for extracting heat from a hot source (7) and transferring it to an autonomous heat accumulator, which is portable, forming a cold source, this device having the special feature that the said accumulator is formed by an enclosure (1) containing ammonia under conditions such that at least a significant portion of the heat transferred to this accumulator causes the ammonia to pass from the solid state to the liquid state. The device is usable for the thermal control of protective equipment or of leakproof protective suits intended for work in a toxic atmosphere or at high temperature, or also in space.

Abstract: A modular assembly for use in forming an article of furniture or the like including a connector member for joining together three elongated members on mutually perpendicular axes. The connector member includes three pairs of flanges which are received respectively in U-shaped channels in the three elongated members with the members secured in each case to the connector member by a clamping member which clamps the flanges of the elongated member between the flanges on the connector member and flange portions on the clamping member. The portions of the connector member receiving the horizontal elongated members are recessed inwardly or rearwardly from the connector member portion receiving the vertical member so that the ends of the horizontal elongated members may pass behind the vertical member to hide the raw edges of the horizontal members. The connector member and the various fastening elements are essentially totally hidden from view in the final assembly.