Patents by Inventor On Chang

On Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9941173
    Abstract: A system and method for a memory cell layout is disclosed. An embodiment comprises forming dummy layers and spacers along the sidewalls of the dummy layer. Once the spacers have been formed, the dummy layers may be removed and the spacers may be used as a mask. By using the spacers instead of a standard lithographic process, the inherent limitations of the lithographic process can be avoided and further scaling of FinFET devices can be achieved.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jhon-Jhy Liaw, Chang-Yun Chang
  • Patent number: 9941407
    Abstract: A method of forming a FinFET is provided. A gate oxide layer and a dummy poly layer are substantially simultaneously etched using an etchant having a higher selectivity on the gate oxide layer than on the dummy poly layer. The gate oxide layer and the dummy poly layer are intersected with the gate oxide layer over a fin layer of the FinFET.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jr-Jung Lin, Chih-Han Lin, Ming-Ching Chang, Chao-Cheng Chen
  • Patent number: 9940200
    Abstract: A storage device failure recovery system includes a storage IHS and a user IHS coupled together over a network. The user IHS includes a storage system having a storage device, and a storage repair function that periodically provides a storage device image over the network to the storage IHS using data from the storage device. The storage repair function detects a failure of the storage device and streams an operating system on the user IHS using the storage device image stored on the storage IHS. While streaming the operating system on the user IHS using the storage device image stored on the storage IHS, the storage repair function analyzes the failure of the storage device, determines a storage system failure recovery procedure, and performs the storage system failure recovery procedure to restore the storage system while a user remains productive on the user IHS via the streamed operating system.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: April 10, 2018
    Assignee: Dell Products L.P.
    Inventors: Carlton A. Andrews, Gary D. Huber, Yuan-Chang Lo, Todd Swierk
  • Patent number: 9941996
    Abstract: Computationally efficient message encoding and decoding schemes for NCMA-based multiple access networks are enabled. Belief propagation decoding of fountain codes designed for NCMA-based multiple access networks may be enhanced using Gaussian elimination. Networks utilizing a network-coded slotted ALOHA protocol can benefit in particular. In such cases, Gaussian elimination may be applied locally to solve the linear system associated with each timeslot, and belief propagation decoding may be applied between the linear systems obtained over different timeslots. The computational complexity of such an approach may be of the same order as a conventional belief propagation decoding algorithm. The fountain code degree distribution may be tuned to optimize for different numbers of expected channel users.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: April 10, 2018
    Assignee: The Chinese University of Hong Kong
    Inventors: Shenghao Yang, Soung-Chang Liew, Lizhao You, Yi Chen
  • Patent number: 9941904
    Abstract: The present invention provides a decoding method, a decoding apparatus, and a communications system, which implement multi-level coding in a manner combining soft-decision error correction coding and hard-decision error correction coding, implement multi-level decoding in a manner combining soft-decision error correction decoding and hard-decision error correction decoding, so as to integrate advantages of the two manners: compared with a manner in which soft-decision error correction coding and decoding are performed on multiple levels, a manner in which soft-decision error correction coding and decoding are performed on only one level reduces system complexity and resource overhead; and performing hard-decision error correction coding and decoding on other levels on a basis of performing soft-decision error correction coding and decoding on one level ensures gain performance, thereby meeting a gain requirement of a high-speed optical transmission system.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: April 10, 2018
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Fan Yu, Deyuan Chang
  • Patent number: 9937485
    Abstract: The present invention relates to a hydrocracking catalyst, a process for preparing the same and use thereof. The present catalyst comprises a cracking component and a hydrogenation component, wherein the cracking component comprises from 0 to 20 wt. % of a molecular sieve and from 20 wt. % to 60 wt. % of an amorphous silica-alumina, the hydrogenation component comprises at least one hydrogenation metal in a total amount of from 34 wt. % to 75 wt. % calculated by the mass of oxides, each amount is based on the total weight of the catalyst. The present catalyst is prepared by directly mixing an acidic component powder material with an impregnating solution, impregnating, filtering, drying, molding, and drying and calcining.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: April 10, 2018
    Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, FUSHUN RESEARCH INSTITUTE OF PETROLEUM AND PETROCHEMICALS, SINOPEC
    Inventors: Yanze Du, Minghua Guan, Fenglai Wang, Chang Liu
  • Patent number: 9939589
    Abstract: Optical fiber connectors configured to allow ease of change of the connector polarity by providing lockable outer housing. In an embodiment, an optical fiber connector comprises an inner housing, at least one key configured to move along the inner housing so as to change a polarity of said optical fiber connector, and an outer housing disposed around at least a portion of the inner housing and configured to slide in a longitudinal direction so as to expose at least a portion of said at least one key, wherein the outer housing includes a flexible portion configured to lock to the inner housing so as to retain the outer housing in a pulled back position relative to the inner housing.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: April 10, 2018
    Assignee: Senko Advanced Components, Inc.
    Inventors: Kazuyoshi Takano, Jimmy Jun-Fu Chang
  • Patent number: 9942743
    Abstract: A user terminal exists in a first cell operating at a first frequency, in a mobile communication system that supports a D2D (Device to Device) proximity service. The user terminal includes a transmitter configured to transmit a D2D interest indication indicating that the user terminal has an interest in the D2D proximity service, to a base station forming the first cell.
    Type: Grant
    Filed: November 17, 2016
    Date of Patent: April 10, 2018
    Assignee: Kyocera Corporation
    Inventors: Masato Fujishiro, Henry Chang
  • Patent number: 9940032
    Abstract: According to a storage system, method, and apparatus for processing an operation request provided by embodiments of the present invention, a controller directly encapsulates a SCSI protocol operation request into an Ethernet operation request packet at the MAC layer instead of using the TCP/IP protocol layer and a disk enclosure decapsulates the Ethernet operation request to obtain the SCSI protocol operation request and sends the SCSI protocol operation request to a target disk, thereby reducing layers of encapsulation, reducing a processing delay of the storage system, and improving performance of the storage system.
    Type: Grant
    Filed: July 5, 2017
    Date of Patent: April 10, 2018
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Sheng Chang, Xinyu Hou, Haitao Guo
  • Patent number: 9942554
    Abstract: The present invention relates to an image encoding and decoding technique, and more particularly, to an image encoder and decoder using unidirectional prediction. The image encoder includes a dividing unit to divide a macro block into a plurality of sub-blocks, a unidirectional application determining unit to determine whether an identical prediction mode is applied to each of the plurality of sub-blocks, and a prediction mode determining unit to determine a prediction mode with respect to each of the plurality of sub-blocks based on a determined result of the unidirectional application determining unit.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: April 10, 2018
    Assignees: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, KWANGWOON UNIVERSITY INDUSTRY-ACADEMIC COLLABORATION FOUNDATION, UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Hae Chul Choi, Se Yoon Jeong, Sung-Chang Lim, Jin Soo Choi, Jin Woo Hong, Dong Gyu Sim, Seoung-Jun Oh, Chang-Beom Ahn, Gwang Hoon Park, Seung Ryong Kook, Sea-Nae Park, Kwang-Su Jeong
  • Patent number: 9941152
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a metal gate stack formed over the semiconductor substrate. The semiconductor device also includes an insulating layer formed over the semiconductor substrate and surrounding the metal gate stack, wherein the metal gate stack includes a metal gate electrode. The semiconductor device further includes a metal oxide structure formed over the insulating layer and in direct contact with the insulating layer. The metal oxide structure includes an oxidized material of the metal gate electrode.
    Type: Grant
    Filed: February 6, 2017
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Jia Hsieh, Chih-Lin Wang, Chia-Der Chang
  • Patent number: 9937073
    Abstract: A comfortable insert comprises a retention structure sized for placement under the eyelids and along at least a portion of conjunctival sac of the upper and lower lids of the eye. The retention structure resists deflection when placed in the conjunctival sac of the eye and to guide the insert along the sac when the eye moves. The retention structure can be configured in many ways to provide the resistance to deflection and may comprise a hoop strength so as to urge the retention structure outward and inhibit movement of the retention structure toward the cornea. The insert may move rotationally with deflection along the conjunctival sac, and may comprise a retention structure having a cross sectional dimension sized to fit within folds of the conjunctiva. The insert may comprise a release mechanism and therapeutic agent to release therapeutic amounts of the therapeutic agent for an extended time.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: April 10, 2018
    Assignee: ForSight Vision5, Inc.
    Inventors: Eugene de Juan, Jr., Yair Alster, Cary J. Reich, K. Angela Macfarlane, Janelle Chang, Stephen Boyd, David Sierra, Jose D. Alejandro, Douglas Sutton, Alexander J. Gould
  • Patent number: 9941404
    Abstract: A Fin Field-Effect Transistor (FinFET) includes a semiconductor layer over a substrate, wherein the semiconductor layer forms a channel of the FinFET. A first silicon germanium oxide layer is over the substrate, wherein the first silicon germanium oxide layer has a first germanium percentage. A second silicon germanium oxide layer is over the first silicon germanium oxide layer. The second silicon germanium oxide layer has a second germanium percentage greater than the first germanium percentage. A gate dielectric is on sidewalls and a top surface of the semiconductor layer. A gate electrode is over the gate dielectric.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jean-Pierre Colinge, Kuo-Cheng Ching, Gwan Sin Chang, Zhiqiang Wu, Chih-Hao Wang, Carlos H. Diaz
  • Patent number: 9941129
    Abstract: A semiconductor device and a method for manufacturing the device. The method includes: depositing a first dielectric layer on a semiconductor device; forming a plurality of first trenches through the first dielectric layer; depositing an insulating fill in the plurality of first trenches; planarizing the plurality of first trenches; forming a first gate contact between the plurality of first trenches; depositing a first contact fill in the first gate contact; planarizing the first gate contact; depositing a second dielectric layer on the device; forming a plurality of second trenches through the first and second dielectric layers; depositing a conductive fill in the plurality of second trenches; planarizing the plurality of second trenches; forming a second gate contact where the second gate contact is in contact with the first gate contact; depositing a second contact fill in the second gate contact; and planarizing the second gate contact.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: April 10, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Josephine B. Chang, Paul Chang, Michael A. Guillorn
  • Patent number: 9938473
    Abstract: Provided herein are processes for ethylene oligomerization in the presence of an ionic liquid catalyst and a co-catalyst to produce a hydrocarbon product comprising C10-C55 oligomers.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: April 10, 2018
    Assignees: CHEVRON U.S.A. INC., CHEVRON ORONITE COMPANY LLC
    Inventors: Hye-Kyung Cho Timken, Bong-Kyu Chang, Curtis Bay Campbell, Andrew Michael Thomas, Mark Anthony Fernandez, Madeleine Sessions
  • Patent number: 9940962
    Abstract: In some embodiments, a thermally assisted data recording medium has a recording layer formed of iron (Fe), platinum (Pt) and a transition metal T selected from a group consisting of Rhodium (Rh), Ruthenium (Ru), Osmium (Os) and Iridium (Ir) to substitute for a portion of the Pt content as FeYPtY-XTX with Y in the range of from about 20 at % to about 80 at % and X in the range of from about 0 at % to about 20 at %.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: April 10, 2018
    Assignee: Seagate Technology LLC
    Inventors: Jan-Ulrich Thiele, Yinfeng Ding, YingGuo Peng, Kai-Chieh Chang, Timothy John Klemmer, Li Gao, Yukiko Kubota, Ganping Ju
  • Patent number: 9942789
    Abstract: A mobile station is configured with a logged MBSFN measurement in which a reception status of an MBMS is measured and collected by a logged MDT. The mobile station transmits an availability indicator to a network at a predetermined timing except when the logged MBSFN measurement is still ongoing, the availability indicator indicating an availability of the logged MBSFN measurement.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: April 10, 2018
    Assignee: KYOCERA Corporation
    Inventors: Noriyoshi Fukuta, Henry Chang
  • Patent number: 9940424
    Abstract: The present disclosure is directed to systems and methods for a minimum-implant-area (MIA) aware detailed placement. In embodiments, the present disclosure clusters a violation cell with the cells having a same threshold voltage (Vt) and determines an optimal region for a cluster to minimize the wire-length. In further embodiments, an MIA-aware cell flipping technique minimizes a design area while satisfying the MIA constraint.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: April 10, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yao-Wen Chang, Kai-Han Tseng
  • Patent number: 9941159
    Abstract: A method of making a semiconductor device includes forming a first opening in an insulating layer, forming a second opening in the insulating layer, forming a third opening in the insulating layer and filling the first opening, the second opening and the third opening with a conductive material. The first opening has a width and a length. The second opening has a width less than the length of the first opening, and is electrically connected to the first opening. The third opening has a width less than the width of the second opening, and is electrically connected to the second opening.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: April 10, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Hong Lin, Hsin-Chun Chang, Shiou-Fan Chen, Chwei-Ching Chiu, Yung-Huei Lee
  • Patent number: 9941708
    Abstract: Systems, methods, and apparatus are disclosed for power transfer including a plurality of coil structures located over a ferrite element, the plurality of coil structures configured to generate a high flux region and a low flux region, the low flux region being located between the plurality of coil structures, and a tuning capacitance located directly over the ferrite element in the low flux region.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: April 10, 2018
    Assignee: QUALCOMM Incorporated
    Inventors: Nicholas Athol Keeling, Michael Le Gallais Kissin, Mickel Bipin Budhia, Chang-Yu Huang, Jonathan Beaver, Hao Hao, Claudio Armando Camasca Ramirez