Abstract: Implementations of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. In some implementations, the disclosed 3D memory device comprises: a stack structure including a plurality of dielectric layers and conductive layers alternatively stacked in a vertical direction; an array of channel structures each vertically penetrating the stack structure, each channel structure including a functional layer and a channel layer; and a plurality of isolation structures extending in parallel along a first lateral direction and vertically in an upper portion of the stack structure, each isolation structure being in contact with the channel layers of two adjacent rows of channel structures.

Abstract: An embodiment of the present disclosure provides a sampling equipment and a sampling method, which relates to the field of plant sampling technology, and the sampling equipment includes a sampling tool, a first driving assembly, and a crushing component. The sampling tool is configured to separate a sample from an object to be sampled, is formed with a crushing portion, and is disposed at the first driving assembly. The first driving assembly is configured to drive the sampling tool to move relative to the crushing component to crush the sample. The sampling equipment in the embodiment of the present disclosure reduces the total time for sampling and crushing the plant. Therefore, it can better link up to an existing high-throughput automated DNA extraction equipment and improve the efficiency of plant-related molecular biology research.

Abstract: An example grip rejection method includes detecting a touch on a touch screen, where the touch covers an area of the touch screen. The grip rejection method includes in response to detecting a touch, determining touch coordinates representing the touch area with a touch controller. The grip rejection method includes in response to determining the touch coordinates with the touch controller, determining grip rejection information with the touch controller, where the grip rejection information includes signal strength information of the touch. The grip rejection method includes transmitting the touch coordinates and the grip rejection information of the touch.

Abstract: A semiconductor device includes a device layer, a first passivation layer, an aluminum pad, a second passivation layer, an under-ball metallurgy (UBM) pad and a connector. The device layer is disposed over a substrate, wherein the device layer includes a top metal feature. The first passivation layer is disposed over the device layer. The aluminum pad penetrates through the first passivation layer and is electrically connected to the top metal feature. The second passivation layer is disposed over the aluminum pad. The UBM pad penetrates through the second passivation layer and is electrically connected to the aluminum pad. The connector is disposed over the UBM pad. In some embodiments, a first included angle between a sidewall and a bottom of the aluminum pad is greater than a second included angle between a sidewall and a bottom of the UBM pad.

Abstract: Disclosed are a high-voltage three-phase four-bridge-arm topology structure and an inverter. The topology structure includes four bridge-arm circuits and a converter; one end of first bridge-arm circuit is connected to an A-phase high voltage line and the other end is connected to a first conversion module, one end of second bridge-arm circuit to a B-phase high voltage line and the other end to a second conversion module; one end of third bridge-arm circuit to a C-phase high voltage line and the other end to a third conversion module; one end of fourth bridge arm circuit to a ground line and the other end to a fourth conversion module, and the fourth bridge arm circuit is used to perform voltage compensation on the output voltages of the first bridge arm circuit, second bridge arm circuit, and third bridge arm circuit when the three phase high voltage lines are unbalanced.

Abstract: Disclosed are a high-voltage three-phase four-bridge-arm topology structure and an inverter. The topology structure includes four bridge-arm circuits and a converter; one end of first bridge-arm circuit is connected to an A-phase high voltage line and the other end is connected to a first conversion module, one end of second bridge-arm circuit to a B-phase high voltage line and the other end to a second conversion module; one end of third bridge-arm circuit to a C-phase high voltage line and the other end to a third conversion module; one end of fourth bridge arm circuit to a ground line and the other end to a fourth conversion module, and the fourth bridge arm circuit is used to perform voltage compensation on the output voltages of the first bridge arm circuit, second bridge arm circuit, and third bridge arm circuit when the three phase high voltage lines are unbalanced.

Abstract: Provided are early-strength and quick-setting ultra-high performance concrete (UHPC), and a preparation method and use thereof. The early-strength and quick-setting UHPC includes, in parts by mass: 110 parts to 180 parts of a red mud, 70 parts to 80 parts of a silica fume, 130 parts to 290 parts of a cement, 400 parts to 500 parts of a quartz sand, 10 parts to 15 parts of a water-reducing agent, 80 parts to 100 parts of water, and 50 parts to 75 parts of a steel fiber. The preparation method includes: subjecting the silica fume, the cement, the quartz sand, and the red mud to first mixing to obtain a first premix; subjecting the first premix, the water, and the water-reducing agent to second mixing to obtain a second premix; and subjecting the second premix and the steel fiber to third mixing to obtain the early-strength and quick-setting UHPC.

Abstract: A fabrication method is disclosed. The fabrication method includes: forming, on a substrate, a transistor comprising a source, drain, and gate; forming a multi-layer interconnection structure configured to provide electrical connections for the source, drain, and gate, wherein the multi-layer interconnection structure has a plurality of interconnection layers; forming a metal-insulator-metal (MiM) capacitor in the interconnection structure, the MiM capacitor comprising a first electrode, a high-K spacer with a first vertically-extending sidewall and a second vertically-extending sidewall wherein the first vertically-extending sidewall has a vertically extending interface with the first electrode, and a second electrode wherein the second vertically-extending sidewall has a vertically extending interface with the second electrode; forming a first conductive feature that connects to the first electrode; and forming a second conductive feature that connects to the second electrode.

Abstract: Disclosed are a dual-scale toughened cement-based composite material and use thereof. The cement-based composite material includes a cementitious material, a polymer monomer, an initiator, a crosslinking agent, and fibers, wherein functional groups of the polymer monomer include a carbon-carbon double bond and a carboxyl group; and the fibers include steel fibers and/or synthetic fibers, the synthetic fibers including one or more selected from the group consisting of polyvinyl alcohol fibers, polypropylene fibers, glass fibers, and carbon fibers.

Abstract: A non-destructive testing system for photovoltaic cells includes a non-contact electromagnetic induction device, a short-wave infrared (SWIR) camera or/and a visible-light camera, a thermal imaging device, and an image processing device. The non-contact electromagnetic induction device is configured for generating an external electric field acting on the photovoltaic cell without being in contact with the photovoltaic cell. A direction of the external electric field is parallel to that of an internal electric field of the photovoltaic cell. The SWIR camera or/and the visible-light camera is/are configured for obtaining an optical radiation distribution map within the photovoltaic cell. The thermal imaging device is configured for obtaining a thermal radiation distribution map in the photovoltaic cell. The image processing device is configured for storing and processing the optical and thermal radiation distribution maps. Non-destructive testing equipment including the above system is further provided.

Abstract: The present disclosure relates to the technical field of protective coatings, and provides a graphene oxide (GO)-modified styrene-acrylic Pickering emulsion and a composite emulsion, and preparation methods and use. In the present disclosure, GO is added during polymerization of a styrene-acrylic monomer, and the GO is attached to an interface of a styrene-acrylic core while forming the styrene-acrylic core; and the GO is “stitched” at the interface of the styrene-acrylic core by a silane coupling agent, thus giving the GO a better dispersion effect. After adding a shell phase emulsion, a part of the styrene-acrylic core that is not completely wrapped by a GO sheet may be grafted with a shell phase, and cross-linking between a core phase and the shell phase can further enhance a steric stability of the GO; and the GO can fully connect the styrene-acrylic core with a siloxane shell, improving the molecular configuration of a siloxane component.

Abstract: The present disclosure provides a performance testing method and system for a polycarboxylate superplasticizer in a concrete system. An interface model is constructed based on a calcium silicate hydrate (C—S—H) gel model and a molecular dynamics model of a polycarboxylate superplasticizer, which can cover complexity of a cement particle interface and variability of the polycarboxylate superplasticizer, and can also establish a link between a microstructure of the polycarboxylate superplasticizer and a macroscopic fluidity of a cement across multiple scales. Meanwhile, friction resistance is accurately calculated based on the constructed interface model to accurately test a performance of the polycarboxylate superplasticizer, thereby shortening a screening cycle of the polycarboxylate superplasticizer and improving a performance optimization efficiency.

Abstract: A backlight module and a display device are provided. The backlight module includes a lighting-emitting unit; an optical film; and a light-adjusting layer located on a side of the optical film adjacent to the light-exiting surface of the backlight module. The light-adjusting layer includes light-adjusting units, a light-adjusting unit includes a first surface and a second surface, the first surface is located on a side of the second surface adjacent to the light-exiting surface and is a flat surface, the second surface at least includes a first sub-surface and a second sub-surface, along a second direction, a plane where the first sub-surface is located intersects a plane where the first surface is located, the first sub-surface and the second sub-surface are inclined to a side away from the light-exiting surface, and the first direction, the second direction and the third direction all intersect each other.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Abstract: The specification discloses image and data processing methods and apparatuses. The method includes: obtaining a source pose and texture information according to a source image; obtaining a first synthetic image according to the source image, a target pose, and the source pose; obtaining a residual map according to the texture information and the first synthetic image; and obtaining a second synthetic image according to the first synthetic image and the residual map. The specification resolves the technical problem of lacking a sense of reality in a synthetic image due to loss of texture details in feature extraction during character action transfer in the existing technologies.

Abstract: The present disclosure provides a styrene acrylate-siloxane composite emulsion with a core-shell structure, and a preparation method and use thereof, and relates to the technical field of protective coatings. In the present disclosure, a core emulsion is prepared through two-step emulsification with styrene, an acrylate monomer, a first emulsifying agent, a first initiator, a second initiator, an alkaline reagent, and water as raw materials; then a shell emulsion is prepared with a siloxane monomer, a hydroxyl-containing acrylate monomer, an emulsifying agent, and water as raw materials; and then the core emulsion, the shell emulsion, and an initiator are subjected to a grafting reaction to obtain the styrene acrylate-siloxane composite emulsion with a core-shell structure.

Abstract: Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Abstract: A method for manufacturing the semiconductor structure includes: providing a substrate, in which active regions and isolation regions are formed; forming grooves in the active regions, which include first grooves located at upper portions and second grooves located at lower portions and communicating with the first grooves, and a width of the first grooves is greater than a width of the second grooves; and forming gate structures in the first grooves and the second grooves.